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The HERD experiment is a future experiment for the direct detection of high-energy cosmic rays and is to be installed on the Chinese space station in 2027. The main objectives of HERD are the first direct measurement of the knee of the cosmic ray spectrum, the extension of electron+positron flux measurement up to tens of TeV, gamma ray astronomy, and the search for indirect signals of dark matter. The main component of the HERD detector is an innovative calorimeter composed of about 7500 LYSO scintillating crystals assembled in a spherical shape. Two independent readout systems of the LYSO scintillation light will be installed on each crystal: the wavelength-shifting fibers system developed by IHEP and the double photodiode readout system developed by INFN and CIEMAT. In order to measure protons in the cosmic ray knee region, we must be able to measure energy release of about 250 TeV in a single crystal. In addition, in order to calibrate the system, we need to measure typical releases of minimum ionizing particles that are about 30 MeV. Thus, the readout systems should have a dynamic range of about 107. In this article, we analyze the development and the performance of the double photodiode readout system. In particular, we show the performance of a prototype readout by the double photodiode system for electromagnetic showers as measured during a beam test carried out at the CERN SPS in October 2021 with high-energy electron beams.

HERD is a future experiment for the direct detection of high energy cosmic rays. The instrument is based on a calorimeter optimized not only for a good energy resolution but also for a large acceptance. Each crystal composing the calorimeter is equipped with two read-out systems: one based on wavelength-shifting fibers and the other based on two photodiodes with different active areas assembled in a monolithic package. In this paper, we describe the photodiode read-out system, focusing on experimental requirements, design and estimated performances. Finally, we show how these features lead to the flight model project of the photodiode read-out system.

In hard X-ray applications that require high detection efficiency and short response times, such as synchrotron radiation-based Mössbauer absorption spectroscopy and time-resolved fluorescence or photon beam position monitoring, III–V-compound semiconductors, and dedicated alloys offer some advantages over the Si-based technologies traditionally used in solid-state photodetectors. Amongst them, gallium arsenide (GaAs) is one of the most valuable materials thanks to its unique characteristics. At the same time, implementing charge-multiplication mechanisms within the sensor may become of critical importance in cases where the photogenerated signal needs an intrinsic amplification before being acquired by the front-end electronics, such as in the case of a very weak photon flux or when single-photon detection is required. Some GaAs-based avalanche photodiodes (APDs) were grown by a molecular beam epitaxy to fulfill these needs; by means of band gap engineering, we realised devices with separate absorption and multiplication region(s) (SAM), the latter featuring a so-called staircase structure to reduce the multiplication noise. This work reports on the experimental characterisations of gain, noise, and charge collection efficiencies of three series of GaAs APDs featuring different thicknesses of the absorption regions. These devices have been developed to investigate the role of such thicknesses and the presence of traps or defects at the metal–semiconductor interfaces responsible for charge loss, in order to lay the groundwork for the future development of very thick GaAs devices (thicker than 100 μm) for hard X-rays. Several measurements were carried out on such devices with both lasers and synchrotron light sources, inducing photon absorption with X-ray microbeams at variable and controlled depths. In this way, we verified both the role of the thickness of the absorption region in the collection efficiency and the possibility of using the APDs without reaching the punch-through voltage, thus preventing the noise induced by charge multiplication in the absorption region. These devices, with thicknesses suitable for soft X-ray detection, have also shown good characteristics in terms of internal amplification and reduction of multiplication noise, in line with numerical simulations.