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This study proposes a nitrogen-polar (N-polar) Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN structure that can generate a large amount of two-dimensional electron gas to enhance the device development of samples. Additionally, we have analyzed the critical thickness of N-polar AlGaN/AlN based on the theoretical calculations of three different values of film thickness. The metalorganic vapor-phase epitaxy method is used to grow N-polar Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN on sapphire substrates. The substrates with a misorientation angle of 2° along the m -axis and a -axis directions are selected to determine the effect of the off-cut angle on sample flatness and currentâ€"voltage characteristics. Furthermore, we determine the effect of Al contents on N-polar Al x Ga1âˆ' x N/Al0.9Ga0.1N/AlN under the optimum growth conditions of the growth thickness of the top layer of AlGaN and sapphire substrate. The results indicate that the current throughput increases with a decrease in Al content. Lastly, we have fabricated the N-polar AlGaN/AlN heterostructure field effect transistor (FET) to demonstrate the static FET characteristics. [ABSTRACT FROM AUTHOR]

SUMMARY The conditions for culture of viable protoplasts from Laminaria japonica were investigated and the regenerative processes were observed in detail. As a result of culturing at four water temperatures (5, 10, 15, and 18°C), we found that low water temperature was better for survival, division and rhizoidal formation of protoplast-derived cells. Only epidermis-derived protoplasts developed into normal sporophytes through a direct developmental process. Protoplast-derived cells divided after 5 days and 2–10 celled germlings formed the first rhizoids after 15 days. Only initial sporophytes with the first rhizoids grew to normal sporophytes with multilayered blades, stipes and holdfasts. When these young sporophytes were transplanted into the sea, they grew to normal fertile sporophytes. [ABSTRACT FROM AUTHOR]

Background: Genetic diagnoses provide beneficial information to patients and families. However, traditional genetic diagnoses are often difficult even for experienced clinicians and require recognition of characteristic patterns of signs or symptoms to guide targeted genetic testing for the confirmation of diagnoses. Next-generation sequencing (NGS) is a powerful genetic diagnostic tool. However, whole-genome and whole-exome sequencing (WES) are expensive, and the interpretation of results is difficult. Hence, target gene capture sequencing of gene panels has recently been applied to genetic diagnoses. Herein, we demonstrate that targeted sequencing approaches using gene panel testing are highly efficient for the diagnosis of Mendelian disorders., Methods: NGS using TruSight one gene panel was performed in 17 families and 20 patients, and we developed a bioinformatic pipeline at our institution for detecting mutations., Results: We detected causative mutations in 6 of 17 (35%) families. In particular, 11 (65%) families had syndromic diagnosis and 6 (35%) had no syndromic diagnosis before NGS testing. The number of positive diagnoses was 5 of 11 (45%) in the syndromic group and were 1 of 6 (17%) among patients of the no syndromic diagnosis group., Conclusion: Diagnostic yields in the present study were higher than in previous reports of genetic and chromosomal tests and WES. The present comprehensive gene-targeted panel test is a powerful diagnostic tool for Mendelian disorders.