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The gradual depletion of the Earth's stratospheric ozone and the regular appearance of deep ozone 'hole' over the polar regions has dramatic ramifications for our planet

Available planar diodes for space-based applications at submillimeter wavelengths have not achieved either the required low junction capacitance or the low series resistance-junction capacitance product. Here, the development of a novel planar diode structure that overcomes both of these difficulties is outlined. The characteristics of these Schottky barrier mixer diodes are presented and electron micrographs are shown. The diode structure will allow planar technology to be extended throughout the submillimeter wavelength range.

The following accomplishments were made towards the goal of an optimized whiskerless diode chip for submillimeter wavelength applications. (1) Surface channel whiskerless diode structure was developed which offers excellent DC and RF characteristics, reduced shunt capacitance and simplified fabrication compared to mesa and proton isolated structures. (2) Reliable fabrication technology was developed for the surface channel structure. The new anode plating technology is a major improvement. (3) DC and RF characterization of the surface channel diode was compared with whisker contacted diodes. This data indicates electrical performance as good as the best reported for similar whisker contacted devices. (4) Additional batches of surface channel diodes were fabricated with excellent I-V and reduced shunt capacitance. (5) Large scale capacitance modelinng was done for the planar diode structure. This work revealed the importance of removing the substrate gallium arsenide for absolute minimum pad capacitance. (6) A surface channel diode was developed on quartz substrate and this substrate was completely removed after diode mounting for minimum parasitic capacitance. This work continues with the goal of producing excellent quality submillimeter wavelength planar diodes which satisfy the requirements of easy handling and robustness. These devices will allow the routine implementation of Schottky receivers into space-based applications at frequencies as high as 1 THz, and, in the future, beyond.

The authors have succeeded in fabricating high-quality submicron NbCN edge junctions using a technique which is commonly used to make Nb edge junctions. A modified commercial ion gun was used to cut an edge in SiO2/NbCN films partially covered with photoresist. An insulating barrier was then formed on the exposed edge by reactive ion beam oxidation, and a counterelectrode of PbBi was deposited. The electrical quality of the resulting junctions was found to be strongly influenced by the ion beam acceleration voltages used to cut the edge and to oxidize it. For low ion beam voltages, the junction quality parameter was as high as Vm = 55 mV (measured at 3 mV), but higher ion beam voltages yielded strikingly poorer quality junctions. In light of the small coherence length of NbN, the dependence of the electrical characteristics on ion beam voltage is presumably due to mechanical damage of the NbCN surface. In contrast, for similar ion beam voltages, no such dependence was found for Nb edge junctions.

Improved design for GaAs electronic device or integrated circuit designed to operate at cryogenic temperatures, customary SiO2 insulating layer replaced by semi-insulating layer of GaAs. Thermal expansions of device and covering layer therefore match closely, and thermal stresses caused by immersion in cryogenic chamber nearly eliminated.

Superconductor-Insulator-Superconductor (SIS) quantum mixers provide a relatively new approach to millimeter wave mixing potentially offering conversion gain, a low local oscillator power demand and potential mixer temperatures near the quantum limit. This paper presents device modeling and fabrication development for NbCN lead-alloy submicron edge-contact SIS mixers for use at 115 GHz.

Low noise achieved without usual high resistance. Barrier of p-type material placed between metal anode and heavily-doped gallium arsenide. Ntype epitaxial layer eliminated. Barrier prevents quantum tunneling of electrons between semiconductor and metal. Higher breakdown structure provided.

Phosphor bronze wire pointed without highly-toxic chemical reagents. Phosphor bronze wire to be pointed affixed to metal post held by fixture, such as pin vise. Fixture moved axially by micrometer allows precise control of position of end of wire with respect to surface of pointing solution. Solution consists of 4 weight percent sulfamic acid crystals in deionized water. Dissolution current adjusted via the autotransformer setting.

In-place process for etching and growth of gallium arsenide calls for presaturation of etch and growth melts by arsenic source crystal. Procedure allows precise control of thickness of etch and newly grown layer on substrate. Etching and deposition setup is expected to simplify processing and improve characteristics of gallium arsenide lasers, high-frequency amplifiers, and advanced integrated circuits.

A method is described for forming sharp tips on thin wires, in particular phosphor bronze wires of diameters such as one-thousandth inch used to contact micron size Schottky barrier diodes, which enables close control of tip shape and which avoids the use of highly toxic solutions. The method includes dipping an end of a phosphor bronze wire into a dilute solution of sulfamic acid and applying a current through the wire to electrochemically etch it. The humidity in the room is controlled to a level of less than 50%, and the voltage applied between the wire and another electrode in the solutions is a half wave rectified voltage. The current through the wire is monitored, and the process is stopped when the current falls to a predetermined low level.

Pointed phosphor-bronze whiskers are commonly used to contact micron-size Schottky barrier diodes. A process is presented which allows pointing such wire and achieving the desired cone angle and tip diameter without the use of highly undesirable chemical reagents.

A controlled in situ etch-back technique is disclosed in which an etch melt and a growth melt are first saturated by a source-seed crystal and thereafter etch-back of a substrate takes place by the slightly undersaturated etch melt, followed by LPE growth of a layer by the growth melt, which is slightly supersaturated.

Present day receivers operating at millimeter and sub-millimeter wavelengths most often rely, for their first mixers, on Schottky-barrier diodes formed on epitaxial GaAs. Crucial parameters for these diodes are breakdown voltage, series resistance, junction capacitance and forward conduction mechanism. Some of these are improved, others impaired, by change of epitaxy thickness. This paper describes experience with optimizing GaAs Schottky-diode parameters by anodic oxidation thinning of GaAs epitaxial layers. Monitoring of breakdown voltage of epitaxial GaAs in anodic oxidation solution provides indication of when thinning should be stopped in subjection to the breakdown voltage specification of diodes to be made from the material. Mixer and frequency-multiplier performance superior to any previously reported have been achieved by this technique.

Millimeter wave Schottky barrier mixer diodes are extremely important devices for radio astronomy. The performance of the Schottky diodes depends largely on the characteristics and quality of the GaAs epitaxial materials used. Systematic manipulation of the liquid phase epitaxial growth conditions and substrate surface treatments has yielded significantly improved surface morphology. Initial problems of high resistivity interfacial layers have been reduced without the use of an in situ etchback. Two-micron diameter Schottky diodes fabricated from epitaxial layers grown at 725 C exhibit a 9-ohm series resistance very near the theoretical minimum.

Three millimeter-wavelength transitions of ClO were searched for in the stratospheric emission spectrum during May-August 1977 using aircraft-based instruments. The measurements indicate that if stratospheric ClO has a vertical distribution of the form predicted by present photochemical models, then the ClO volume mixing ratio at the profile peak did not exceed 10 to the -9th at the time and place of the measurements. The observed spectra suggest the presence of ClO in the stratosphere but do not provide a definitive detection.

The superheterodyne millimeter-wave radiometer on the Columbia-GISS 4-ft telescope is described. This receiver uses a room-temperature Schottky diode mixer, with a resonant-ring filter as LO diplexer. The diplexer has low signal loss, efficient LO power coupling, and suppresses most of the LO noise at both sidebands. The receiver IF section has a parametric amplifier as its first stage with sufficient gain to overcome the second-stage amplifier noise. A broad-banded quarter-wave impedance transformer minimizes the mismatch between mixer and paramp. At 115 GHz, the SSB receiver noise temperature is 860 K, which is believed to be the lowest figure so far reported for a room-temperature receiver at this frequency.

An experimental study of small area (2-micron diameter) Pt-GaAs Schottky barrier diodes has been made, by using a wafer chip with a matrix of these diodes lying within approximately a minority carrier diffusion length of one another. Using one diode as collector and another as emitter, transistor measurements indicated that the dominant contribution to the current is the majority-carrier thermionic field emission current for large forward-bias voltage of the emitter junction (V-EB no less than about 0.4 V), whereas the smaller forward-bias (V-EB no greater than about 0.4 V) recombination in the space-charge region was most important. The minority carrier injection ratio is measurable only for large forward-bias voltages, decreasing from about 0.02 to 0.00001 as VEB increases from 0.5 to 1.0 V. The minority carrier diffusion length was measured to be about 1.3 microns. These results are of considerable significance for the understanding and optimization of the performance of these devices as classical detectors and mixers.

A new Schottky-diode mixer is described which has low noise and conversion loss in the 140-220-GHz band. At 170 GHz mixer noise temperatures of 1100-1300 K have been measured, with 6.2-7.2-dB single sideboard conversion loss. The design should be usable up to about 300 GHz with appropriate scaling. The mixer has been successfully used in airborne radiometers on the NASA Convair 990 and C-141 aircraft.

The Josephson junction shows great promise as a millimeter wave mixer element. This paper discusses the physical mixing process from a first-order mathematical approach. Design and fabrication of such structures tailored for use in a 80-120 GHz mixer application is presented. Testing of the structures and a discussion of their interpretation is presented.

Device with step function variation of the capacitance is useful for voltage-controlled oscillator circuits and as a voltage-sensitive switch. Simplicity of construction makes the device suitable for large-scale integration, microelectronic circuits.

High impedance source with shunt capacitance, discussing periodic output measurement using operational amplifier

Spectral results of p- and n-type silicon and germanium

Photoconductor open circuit voltage determination, calculating responsivity and sensitivity of actual and ideal cases

Black body responsivity data of n-type and p-type silicon

Cobalt 60 gamma radiation effect on MOS diodes fabricated on silicon substrates, noting surface state and oxide charge densities

Cobalt 60 gamma radiation effects on Metal Oxide Semiconductors /MOS/ with p-type and n-type silicon substrates

Surface state density variations on metal oxide semiconductor capacitors due to gamma radiation

Derivation of mathematical functions for calculating changes in semiconductor surfaces due to applied surface charge

Frequency shifting, commonly used in electronic signal processing, is applied in tuning, automatic frequency control, antenna element switching, phase shifting, etc. Frequency shifting can be accomplished economically and reliably with simple circuit comprising conventional resistor and solid-state switching device which can be equivalent to two capacitors, depending on switching state.

High-energy electrons (approximately 7 MeV) were used to radiation-dope extrinsic silicon. Both n- and p-type silicon photodetectors were fabricated using this doping technique. The 500 K blackbody responsivity, spectral response, and peak detectivity were determined for these devices. The peak detectivity values measured were 4.8 Gm Hz to the 1/2 power per W at 2.15 microns for 0.1-ohm-cm n-type devices and 3.7 Gm Hz to the 1/2 power per W at 40 microns for 10-ohm-cm p-type detectors. A comparison of the thermally generated background majority carrier concentration for radiation-doped and conventional impurity-doped detectors is made.

A linear voltage-tunable null device was predicted, fabricated, and tested. This filter is conceptually a distributed parameter RC representation of the channel of a MOSFET in a network configuration with a second MOSFET that is treated as a variable resistor. Classical transmission-line theory is used to predict a linear tuning curve with applied bias for the device. This concept was used to design a null device having a null that is linearly tunable in the range of 100 kHz. Such devices were fabricated and tested. Typical MOS processing steps were used and the resulting structures are compatible with the planar technology. The compatibility leads towards extension of this work to different frequency ranges for other specific applications.