1. Activation of telecom emitters in silicon upon ion implantation and ns pulsed laser annealing
- Author
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Greta Andrini, Gabriele Zanelli, Sviatoslav Ditalia Tchernij, Emilio Corte, Elena Nieto Hernández, Alessio Verna, Matteo Cocuzza, Ettore Bernardi, Salvatore Virzì, Paolo Traina, Ivo P. Degiovanni, Marco Genovese, Paolo Olivero, and Jacopo Forneris
- Subjects
Materials of engineering and construction. Mechanics of materials ,TA401-492 - Abstract
Abstract Recent demonstrations of optically active telecom emitters show that silicon is a compelling candidate for solid-state quantum photonic platforms. In particular, the fabrication of a defect known as the G center has been shown in carbon-rich silicon upon conventional thermal annealing. However, the high-yield controlled fabrication of these emitters at the wafer scale still requires the identification of a suitable thermodynamic pathway enabling its activation following ion implantation. Here we demonstrate the activation of G centers in high-purity silicon substrates upon nanosecond pulsed laser annealing. The proposed method enables non-invasive, localized activation of G centers by the supply of short non-stationary pulses, thus overcoming the limitations of conventional rapid thermal annealing related to the structural metastability of the emitters. A finite-element analysis highlights the strong non-stationarity of the technique, offering radically different defect-engineering capabilities with respect to conventional longer thermal treatments, paving the way to the direct and controlled fabrication of emitters embedded in integrated photonic circuits and waveguides.
- Published
- 2024
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