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Multicore optical fibers and ribbons based on fiber arrays allow for massively parallel transmission of signals via spatially separated channels, thereby offering attractive bandwidth scaling with linearly increasing technical effort. However, low-loss coupling of light between fiber arrays or multicore fibers and standard linear arrays of vertical-cavity surface-emitting lasers (VCSEL) or photodiodes (PD) still represents a challenge. In this paper, we demonstrate that 3D-printed facet-attached microlenses (FaML) offer an attractive path for connecting multimode fiber arrays as well as individual cores of multimode multicore fibers to standard arrays of VCSEL or PD. The freeform coupling elements are printed in situ with high precision on the device and fiber facets by high-resolution multi-photon lithography. We demonstrate coupling losses down to 0.35 dB along with lateral 1 dB alignment tolerances in excess of 10 μm, allowing to leverage fast passive assembly techniques that rely on industry-standard machine vision. To the best of our knowledge, our experiments represent the first demonstration of a coupling interface that connects individual cores of a multicore fiber to VCSEL or PD arranged in a standard linear array without the need for additional fiber-based or waveguide-based fan-out structures. Using this approach, we build a 3 × 25 Gbit/s transceiver assembly which fits into a small form-factor pluggable module and which fulfills many performance metrics specified in the IEEE 802.3 standard.

Electro-optic (EO) modulators rely on the interaction of optical and electrical signals with second-order nonlinear media. For the optical signal, this interaction can be strongly enhanced using dielectric slot–waveguide structures that exploit a field discontinuity at the interface between a high-index waveguide core and the low-index EO cladding. In contrast to this, the electrical signal is usually applied through conductive regions in the direct vicinity of the optical waveguide. To avoid excessive optical loss, the conductivity of these regions is maintained at a moderate level, thus leading to inherent RC limitations of the modulation bandwidth. In this paper, we show that these limitations can be overcome by extending the slot–waveguide concept to the modulating radio-frequency (RF) signal. Our device combines an RF slotline that relies on B a T i O 3 as a high-k dielectric material with a conventional silicon photonic slot waveguide and a highly efficient organic EO cladding material. In a proof-of-concept experiment, we demonstrate a 1 mm long Mach–Zehnder modulator that offers a 3 dB bandwidth of 76 GHz and a 6 dB bandwidth of 110 GHz along with a small π voltage of 1.3 V ( U π L = 1.3 V m m ). We further demonstrate the viability of the device in a data-transmission experiment using four-state pulse-amplitude modulation (PAM4) at line rates up to 200 Gbit/s. Our first-generation devices leave vast room for further improvement and may open an attractive route towards highly efficient silicon photonic modulators that combine sub-1 mm device lengths with sub-1 V drive voltages and modulation bandwidths of more than 100 GHz.

Key advances which enabled the InP photonic integrated circuit (PIC) and the subsequent progression of InP PICs to fully integrated multichannel DWDM system-on-chip (SOC) PICs are described. Furthermore, the current state-of-the-art commercial multichannel SOC PICs are reviewed as well as key trends and technologies for the future of InP-based PICs in optical communications.

We demonstrate a fully integrated multi-channel InP-based coherent transmitter photonic integrated circuits (PICs) with extended C-band tunability, operating at 33 and 44 Gbaud per channel under 16-QAM dual-polarization modulation. PICs are demonstrated integrating up to 14-channels enabling multi-Tb/s total PIC capacities.

Complex photonic-integrated circuits (PIC) may have strongly non-planar topologies that require waveguide crossings (WGX) when realized in single-layer integration platforms. The number of WGX increases rapidly with the complexity of the circuit, in particular when it comes to highly interconnected optical switch topologies. Here, we present a concept for WGX-free PIC that relies on 3D-printed freeform waveguide overpasses (WOP). We experimentally demonstrate the viability of our approach using the example of a 4 × 4 switch-and-select (SAS) circuit realized on the silicon photonic platform. We further present a comprehensive graph-theoretical analysis of different n × n SAS circuit topologies. We find that for increasing port counts n of the SAS circuit, the number of WGX increases with n4, whereas the number of WOP increases only in proportion to n2.

We demonstrate electrical packaging of a silicon-organic hybrid (SOH) modulator. Gold traces on an AμO3 substrate define the electrical connections to an IQ-modulator having a π-voltage of 1.5 V. Signal generation up to 128 Gbit/s is demonstrated.

We report on the first demonstration of long-term thermally stable silicon-organic hybrid (SOH) modulators in accordance with Telcordia standards of high-temperature storage. The devices rely on an organic electro-optic sidechain polymer with a high glass transition temperature of 172 {\deg}C. In our high-temperature storage experiments at 85 {\deg}C, we find that the electro-optic activity converges to a constant long-term stable level after an initial decay. If we consider a burn-in time of 300 h, the {\pi}-voltage of the modulators increases on average by less than 15 % if we store the devices for additional 2400 h. The performance of the devices is demonstrated by generating high-quality 40 Gbit/s OOK signals both after the burn-in period and after extended high-temperature storage.

Silicon-organic hybrid (SOH) electro-optic (EO) modulators combine small footprint with low operating voltage and hence low power dissipation, thus lending themselves to on-chip integration of large-scale device arrays. Here we demonstrate an electrical packaging concept that enables high-density radio-frequency (RF) interfaces between on-chip SOH devices and external circuits. The concept combines high-resolution $\mathrm{Al_2O_3}$ printed-circuit boards with technically simple metal wire bonds and is amenable to packaging of device arrays with small on-chip bond pad pitches. In a set of experiments, we characterize the performance of the underlying RF building blocks and we demonstrate the viability of the overall concept by generation of high-speed optical communication signals. Achieving line rates (symbols rates) of 128 Gbit/s (64 GBd) using quadrature-phase-shiftkeying (QPSK) modulation and of 160 Gbit/s (40 GBd) using 16-state quadrature-amplitudemodulation (16QAM), we believe that our demonstration represents an important step in bringing SOH modulators from proof-of-concept experiments to deployment in commercial environments.

Fully integrated monolithic, multi-channel InP-based coherent receiver PICs and transceiver modules with extended C-band tunability are described. These PICs operate at 33 and 44 Gbaud per channel under dual polarization (DP) 16-QAM modulation. Fourteen-channel monolithic InP receiver PICs show integration and data rate scaling capability to operate at 44 Gbaud under DP 16-QAM modulation for combined 4.9 Tb/s total capacity. Six channel simultaneous operation of a commercial transceiver module at 33 Gbaud is demonstrated for a variety of modulation formats including DP 16-QAM for >1.2Tbit/s aggregate data capacity.

A single wavelength 66 GBd DP-1024QAM transceiver with a coded bit rate of 1.32 Tb/s is demonstrated. Constellation shaping is employed to tailor the symbol distribution to achieve a net bit rate of 680 Gb/s and spectral efficiency of 9.35 b/s/Hz after 400 km transmission.

We report InP-based coherent transmitter PICs with hybrid integrated SiGe drivers operating at 100GBd, 32QAM back-to-back (1 Tb/wave capable), and at 100GBd, 16QAM over 1400km. Coherent Tx (Rx) PICs with hybrid integrated drivers (amplifiers) operate at 66GBd, 64QAM over 200km.

Nanophotonic modulators and photodetectors are key building blocks for high-speed optical interconnects in datacom and telecom networks. Besides power efficiency and high electro-optic bandwidth, ultra-compact footprint and scalable co-integration with electronic circuitry are indispensable for highly scalable communication systems. In this paper, we give an overview on our recent progress in exploring nanophotonic modulators and photodetectors that combine the specific strengths of silicon photonic and plasmonic device concepts with hybrid integration approaches. Our work comprises electro-optic modulators that exploit silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration to enable unprecedented energy efficiency and transmission speed, as well as waveguide-based plasmonic internal photo-emission detectors (PIPED) with record-high sensitivities and bandwidths.

We demonstrate an optical distance sensor integrated on a silicon photonic chip with a footprint of well below 1 mm2. The integrated system comprises a heterodyne receiver structure with tunable power splitting ratio and on-chip photodetectors. The functionality of the device is demonstrated in a synthetic-wavelength interferometry experiment using frequency combs as optical sources. We obtain accurate and fast distance measurements with an unambiguity range of 3.75 mm, a root-mean-square error of 3.4 µm and acquisition times of 14 µs.

Driven by optical communications, a powerful toolbox for photonic integration has emerged over the last years. We review specific opportunities that can be unlocked by applying these technologies to the field of metrology and sensing.

100 Gbit/s three-level (50 Gbit/s 00K) signals are generated using a silicon-organic hybrid modulator and a BiCMOS duobinary driver IC at a BER of 8.5x10(-5)(

We demonstrate a record-high electro-optic coefficient of r 33 = 359 pm/V in a silicon-organic hybrid (SOH) modulator using the electro-optic chromophore JRD1. The π-voltage-length product amounts to U π L = 320 Vμm, enabling error-free 25 Gbit/s signaling at drive voltages of 180 mV pp .

We report on the hybrid integration of silicon-on-insulator slot waveguides with organic electro-optic materials. We investigate and compare a polymer composite, a dendron-based material, and a binary-chromophore organic glass (BCOG). A record-high in-device electro-optic coefficient of 230 pm/V is found for the BCOG approach resulting in silicon-organic hybrid Mach-Zehnder modulators that feature low $U_{\pi }L$ -products of down to 0.52 Vmm and support data rates of up to 40 Gbit/s.

Optical frequency combs enable coherent data transmission on hundreds of wavelength channels and have the potential to revolutionize terabit communications. Generation of Kerr combs in nonlinear integrated microcavities represents a particularly promising option enabling line spacings of tens of GHz, compliant with wavelength-division multiplexing (WDM) grids. However, Kerr combs may exhibit strong phase noise and multiplet spectral lines, and this has made high-speed data transmission impossible up to now. Recent work has shown that systematic adjustment of pump conditions enables low phase-noise Kerr combs with singlet spectral lines. Here we demonstrate that Kerr combs are suited for coherent data transmission with advanced modulation formats that pose stringent requirements on the spectral purity of the optical source. In a first experiment, we encode a data stream of 392 Gbit/s on subsequent lines of a Kerr comb using quadrature phase shift keying (QPSK) and 16-state quadrature amplitude modulation (16QAM). A second experiment shows feedback-stabilization of a Kerr comb and transmission of a 1.44 Tbit/s data stream over a distance of up to 300 km. The results demonstrate that Kerr combs can meet the highly demanding requirements of multi-terabit/s coherent communications and thus offer a solution towards chip-scale terabit/s transceivers.

Organic materials combined with strongly guiding silicon waveguides open the route to highly efficient electro-optical devices. Modulators based on the so-called silicon-organic hybrid (SOH) platform have only recently shown frequency responses up to 100 GHz, high-speed operation beyond 112 Gbit/s with fJ/bit power consumption. In this paper, we review the SOH platform and discuss important devices such as Mach-Zehnder and IQ-modulators based on the linear electro-optic effect. We further show liquid-crystal phase-shifters with a voltage-length product as low as V pi L = 0.06 V.mm and sub-mu W power consumption as required for slow optical switching or tuning optical filters and devices.

Advanced wavelength-division multiplex-ing (WDM) requires both efficient multi-wavelength light sources to generate optical carriers and highly scalable photonic-electronic interfaces to encode data on these carriers. In this paper, we give an overview on our recent progress regarding silicon-organic hy-brid (SOH) integration and comb-based WDM transmission.

Low-cost photonic integrated circuits (PIC) become increasingly important in medical applications like optical coherence tomography (OCT) for eye care and endoscopy as well as in industrial metrology for distance scanning of surfaces and volumes. We report on two OCT systems fully integrated on a silicon-on- insulator (SOI) chip. With an on-chip reference path, we image objects in distances (5…10)mm from the chip edge with a depth resolution of 11µm and a dynamic range of 53dB . Employing an off-chip reference path, objects are imaged in distances (8000…8010)mm from the chip with a depth resolution of 30µm and a dynamic range of 60dB.

Limitations of silicon photonics can be overcome by hybrid integration of silicon photonic or plasmonic circuits with organic materials or by photonic multi-chip systems. We give an overview on our recent progress regarding both silicon-organic hybrid (SOH) integration and multi-chip integration enabled by photonic wire bonding.

Silicon photonics offers tremendous potential for inexpensive high-yield photonic-electronic integration. Besides conventional dielectric waveguides, plasmonic structures can also be efficiently realized on the silicon photonic platform, reducing device footprint by more than an order of magnitude. However, neither silicon nor metals exhibit appreciable second-order opti-cal nonlinearities, thereby making efficient electro-optic modula-tors challenging to realize. These deficiencies can be overcome by the concepts of silicon-organic hybrid (SOH) and plasmonic-organic hybrid (POH) integration, which combine silicon-on-insulator (SOI) waveguides and plasmonic nanostructures with organic electro-optic cladding materials.