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Halide pervoskites are an important class of semiconducting materials which hold great promise for optoelectronic applications. In this work we investigate the relationship between vibrational anharmonicity and dynamic disorder in this class of solids. Via a multi-scale model parameterized from first-principles calculations, we demonstrate that the non-Gaussian lattice motion in halide perovskites is microscopically connected to the dynamic disorder of overlap fluctuations among electronic states. This connection allows us to rationalize the emergent differences in temperature-dependent mobilities of prototypical MAPbI$_3$ and MAPbBr$_3$ compounds across structural phase-transitions, in agreement with experimental findings. Our analysis suggests that the details of vibrational anharmonicity and dynamic disorder can complement known predictors of electronic conductivity and can provide structure-property guidelines for the tuning of carrier transport characteristics in anharmonic semiconductors.

A fully microscopic model of the doping-dependent exciton and trion line widths in the absorption spectra of monolayer transition metal dichalcogenides in the low temperature and low doping regime is explored. The approach is based on perturbation theory and avoids the use of phenomenological parameters. In the low-doping regime, we find that the trion line width is relatively insensitive to doping levels while the exciton line width increases monotonically with doping. On the other hand, we argue that the trion line width shows a somewhat stronger temperature dependence. The magnitudes of the line widths are likely to be masked by phonon scattering for $T \geq 20$ K in encapsulated samples in the low doping regime. We discuss the breakdown of perturbation theory, which should occur at relatively low doping levels and low temperatures. Our work also paves the way towards understanding a variety of related scattering processes, including impact ionization and Auger scattering in clean 2D samples., Comment: 11 pages, 2 figures, submitted to JCP special issue on Two-Dimensional Materials

Here we develop a microscopic approach aimed at the description of a suite of physical effects related to carrier transport in, and the optical properties of, halide perovskites. Our theory is based on the description of the nuclear dynamics to all orders and goes beyond the common assumption of linear electron-phonon coupling in describing the carrier dynamics and band gap characteristics. When combined with first-principles calculations and applied to the prototypical MAPbI$_{3}$ system, our theory explains seemingly disparate experimental findings associated with both the charge-carrier mobility and optical absorption properties, including their temperature dependencies. Our findings demonstrate that orbital overlap fluctuations in the lead-halide structure plays a significant role in determining the optoelectronic features of halide perovskites.

A new cumulant-based $GW$ approximation for the retarded one-particle Green's function is proposed, motivated by an exact relation between the improper Dyson self-energy and the cumulant generating function. Qualitative aspects of this method are explored within a simple one-electron independent phonon model, where it is seen that the method preserves the energy moment of the spectral weight while also reproducing the exact Green's function in the weak coupling limit. For the three-dimensional electron gas, this method predicts multiple satellites at the bottom of the band, albeit with inaccurate peak spacing. However, its quasiparticle properties and correlation energies are more accurate than both previous cumulant methods and standard $G_0W_0$. Our results point to new features that may be exploited within the framework of cumulant-based methods and suggest promising directions for future exploration and improvement of cumulant-based $GW$ approaches., Comment: 7 pages

Ground state diffusion Monte Carlo is used to investigate the binding energies and carrier probability distributions of excitons, trions, and biexcitons in a variety of two-dimensional transition metal dichalcogenide materials. We compare these results to approximate variational calculations, as well as to analogous Monte Carlo calculations performed with simplified carrier interaction potentials. Our results highlight the successes and failures of approximate approaches as well as the physical features that determine the stability of small carrier complexes in monolayer transition metal dichalcogenide materials. Lastly, we discuss points of agreement and disagreement with recent experiments., Comment: 5 pages, 2 figures + supplemental material