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Molybdenum disulfide (MoS2), a two‐dimensional (2D) semiconducting material harbors intrinsic defects that can be harnessed to achieve tuneable electronic, optoelectronic, and electrochemical devices. However, achieving precise control over defect formation within monolayer MoS2, remains a notable challenge. Here, an in‐situ defect engineering approach for monolayer MoS2 using a pressure‐dependent chemical vapor deposition (CVD) process is presented. Monolayer MoS2 grown in a low pressure CVD conditions (LP‐MoS2) produces sulfur vacancy (Vs) induced defect‐rich crystals primarily attributed to the oxygen‐deficient growth conditions. Conversely, atmospheric pressure CVD‐grown MoS2 (AP‐MoS2) passivates these defects with oxygen from ambient conditions. This disparity in defect profiles profoundly impacts crucial functional properties and device performance. AP‐MoS2 shows a drastically enhanced photoluminescence, which is significantly quenched in LP‐MoS2 attributed to in‐gap electron donor states induced by the Vs defects. However, the n‐doping induced in LP‐MoS2 generates enhanced photoresponsivity and detectivity in fabricated photodetectors compared to the AP‐MoS2‐based devices. Defect‐rich LP‐MoS2 outperforms AP‐MoS2 as channel layers of field‐effect transistors (FETs), as well as electrocatalytic material for hydrogen evolution reaction (HER). This work presents a single‐step CVD approach for in situ defect engineering in monolayer MoS2 and presents a pathway to control defects in other monolayer 2D materials. [ABSTRACT FROM AUTHOR]

Atomically thin, mechanically flexible, memory‐functional, and power‐generating crystals play a crucial role in the technological advancement of portable devices. However, the adoption of these crystals in such technologies is sometimes impeded by expensive and laborious synthesis methods, as well as the need for large‐scale, mechanically stable, and air‐stable materials. Here, an instant‐in‐air liquid metal printing process utilizing liquid bismuth (Bi) is presented, forming naturally occurring, air‐stable, atomically thin, mechanically flexible nanogenerators and ferroelectric oxides. Despite the centrosymmetric nature of the monoclinic P21/c system of achieved α‐Bi2O3‐δ the high kinetics of liquid metal synthesis leads to the formation of vacancies that disrupt the symmetry which is confirmed by density functional theory (DFT) calculations. The polarization switching is measured and utilized for ferroelectric nanopatterning. The exceptional attributes of these atomically thin multifunctional stable oxides, including piezoelectricity, mechanical flexibility, and polarizability, present significant opportunities for developing nano‐components that can be seamlessly integrated into a wide range of devices. [ABSTRACT FROM AUTHOR]

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In2O3) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand. [ABSTRACT FROM AUTHOR]

2D materials are increasingly being investigated for their nonvolatile switching properties as a step toward downscaling of core electronic elements. Here, the interplay between electrochemically active silver (Ag) cations and layered indium selenide (InSe), a 2D metal monochalcogenide, is investigated to demonstrate a nonvolatile switching device. Detailed microscopic characterization supported with density functional theory calculations reveals cationic filamentary‐based nonvolatile switching mechanism of γ‐InSe in a crossplanar architecture. This is electrically driven by diffusion of Ag ions through the layered InSe stack. The InSe‐based memory cells exhibit a switching ratio of ≈103 and a memory retention of >105 s. This work opens new opportunities to enhance resistive switching performances of 2D materials for next‐generation information storage and brain inspired computation using active metal diffusion. [ABSTRACT FROM AUTHOR]

Availability of computing will be strongly limited by global energy production in 1–2 decades. Computing consumes 4–5% of global electricity supply and continues to increase. This is underpinned by memory and switching devices encountering leakage as they are downscaled. Two‑dimensional (2D) materials offer a potential solution to the fundamental problem owing to carrier confinement which significantly reduces scattering events. Herein, a mixed ionic‑electronic transport is used in layered black phosphorus (BP) based vertically stacked resistance change memories. The memory device relies on a unique interplay between the oxygen and silver ion diffusion through the stack which is generated using a combination of bottom (electrochemically active silver) and top (indium tin oxide) electrodes. The use of a transparent top‐electrode enabled for the first time to conduct spectroscopic characterization of the device and experimentally reveal fundamental mechanisms. Endurance of the devices are observed to be >104 switching cycles, with ON/OFF current ratio of >107 and standby power consumption of <5 fW, which effectively suppresses leakage current and sneak paths in a memory array. By undertaking detailed microscopic and spectroscopic investigations, supported by theoretical calculations, this work opens opportunities to enhance resistive switching performances of 2D materials for next‑generation information storage and brain‑inspired computation. [ABSTRACT FROM AUTHOR]

Hyperbolic crystals, such as α-MoO3, can support large wavevectors and photon density as compared to the commonly used dielectric crystals, which makes them a highly desirable platform for compact photonic devices. The extreme anisotropy of the dielectric constant in these crystals is intricately linked with the anisotropic character of the phonons, which along with photon confinement leads to the rich physics of phonon polaritons. However, the chiral nature of phonons in these hyperbolic crystals have not been studied in detail. In this study, we report our observations of helicity selective Raman scattering from flakes of α-MoO3. Both helicity-preserving and helicity-reversing Raman scattering are observed. Our studies reveal that helical selectivity is largely governed by the underlying crystal symmetry. This study shed light on the chiral character of the high symmetry phonons in these hyperbolic crystals. It paves the way for exploiting proposed schemes of coupling chiral phonon modes into propagating surface plasmon polaritons and realizing compact photonic circuits based on helical polarized light. [ABSTRACT FROM AUTHOR]

Hyperbolic crystals, such as α-MoO3, can support large wavevectors and photon density as compared to the commonly used dielectric crystals, which makes them a highly desirable platform for compact photonic devices. The extreme anisotropy of the dielectric constant in these crystals is intricately linked with the anisotropic character of the phonons, which along with photon confinement leads to the rich physics of phonon polaritons. However, the chiral nature of phonons in these hyperbolic crystals have not been studied in detail. In this study, we report our observations of helicity selective Raman scattering from flakes of α-MoO3. Both helicity-preserving and helicity-reversing Raman scattering are observed. Our studies reveal that helical selectivity is largely governed by the underlying crystal symmetry. This study shed light on the chiral character of the high symmetry phonons in these hyperbolic crystals. It paves the way for exploiting proposed schemes of coupling chiral phonon modes into propagating surface plasmon polaritons and realizing compact photonic circuits based on helical polarized light. [ABSTRACT FROM AUTHOR]

Chromism-based optical filters is a niche field of research, due to there being only a handful of electrochromic materials. Typically, electrochromic transition metal oxides such as MoO 3 and WO 3 are utilized in applications such as smart windows and electrochromic devices (ECD). Herein, we report MoO 3- x -based electrically activated ultraviolet (UV) filters. The MoO 3- x grown on indium tin oxide (ITO) substrate is mechanically assembled onto an electrically activated proton exchange membrane. Reversible H + injection/extraction in MoO 3- x is employed to switch the optical transmittance, enabling an electrically activated optical filter. The devices exhibit broadband transmission modulation (325-800 nm), with a peak of ∼60% in the UV-A range (350-392 nm). Comparable switching times of 8 s and a coloration efficiency of up to 116 cm 2 C -1 are achieved.

Metal oxide-based gas sensor technology is promising due to their practical applications in toxic and hazardous gas detection. Orthorhombic α-MoO 3 is a planar metal oxide with a unique layered structure, which can be obtained in a two-dimensional (2D) form. In the 2D form, the larger surface area-to-volume ratio of the material facilitates significantly higher interaction with gas molecules while exhibiting exceptional transport properties. The presence of oxygen vacancies results in nonstoichiometric MoO 3 (MoO 3- x ), which further enhances the charge carrier mobility. Here, we study dual gas sensing characteristics and mechanism of 2D α-MoO 3- x . Herein, conductometric dual gas sensors based on chemical vapor deposited 2D α-MoO 3- x are developed and demonstrated. A facile transfer process is established to integrate the material into any arbitrary substrate. The sensors show high selectivity toward NO 2 and H 2 S gases with response and recovery rates of 295.0 and 276.0 kΩ/s toward NO 2 and 28.5 and 48.0 kΩ/s toward H 2 S, respectively. These gas sensors also show excellent cyclic endurance with a variation in Δ R ∼ 112 ± 1.64 and 19.5 ± 1.13 MΩ for NO 2 and H 2 S, respectively. As such, this work presents the viability of planar 2D α-MoO 3- x as a dual selective gas sensor.