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1. Towards scalable silicon quantum computing

Author: Vinet, M., Hutin, L., Bertrand, B., Barraud, S., Hartmann, J. -M., Kim, Y. -J., Mazzocchi, V., Amisse, A., Bohuslavskyi, H., Bourdet, L., Crippa, A., Jehl, X., Maurand, R., Niquet, Y. -M., Sanquer, M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P. -A., Spence, C., Urdampilleta, M., De Franceschi, S., and Meunier, T.
Subjects: Condensed Matter - Mesoscale and Nanoscale Physics
Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
Published: 2019
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2. 99.992 % $^{28}$Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Author: Mazzocchi, V., Sennikov, P. G., Bulanov, A. D., Churbanov, M. F., Bertrand, B., Hutin, L., Barnes, J. P., Drozdov, M. N., Hartmann, J. M., and Sanquer, M.
Subjects: Condensed Matter - Materials Science
Abstract: Silicon-based quantum bits with electron spins in quantum dots or nuclear spins on dopants are serious contenders in the race for quantum computation. Added to process integration maturity, the lack of nuclear spins in the most abundant $^{28}$silicon isotope host crystal for qubits is a major asset for this silicon quantum technology. We have grown $^{28}$silicon epitaxial layers (epilayers) with an isotopic purity greater than 99.992 % on 300mm natural abundance silicon crystals. The quality of the mono-crystalline isotopically purified epilayer conforms to the same drastic quality requirements as the natural epilayers used in our pre-industrial CMOS facility. The isotopically purified substrates are now ready for the fabrication of silicon qubits using a state-of-the-art 300 mm Si CMOS-foundries equipment and processes, Comment: 7 pages, 7 figures
Published: 2018
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3. 3D sequential integration with Si CMOS stacked on 28nm industrial FDSOI with Cu-ULK iBEOL featuring RO and HDR pixel

Author: Mota-Frutuoso, T., primary, Lapras, V., additional, Brunet, L., additional, Basset, L., additional, Lugo, J., additional, Fenouillet-Beranger, C., additional, Vinet, M., additional, Lattard, D., additional, Boulard, F., additional, Exbraya, Y., additional, Boutry, D., additional, Billoint, O., additional, Bosch, D., additional, Maneglia, Y., additional, Peizerat, A., additional, Dumas, S., additional, Sicard, G., additional, Kerdiles, S., additional, Kanyandekwe, J., additional, Sideris, P., additional, Mazzocchi, V., additional, Sarrazin, A., additional, Loup, V., additional, Mauguen, G., additional, Morales, C., additional, Alba, P. Acosta, additional, Balan, V., additional, Perrot, C., additional, Sturm, J., additional, Euvrard, C., additional, Aussenac, F., additional, Janaud, A., additional, Chapon, J-D., additional, Guillermet, M., additional, Guglieri, S., additional, Bailly, F., additional, Toresani, P., additional, Fournel, F., additional, Mouhdach, M., additional, Berthoud, A., additional, Chapelon, L-L., additional, Ribotta, M., additional, Ponthenier, F., additional, Magalhaes, A., additional, Maitrejean, S., additional, Moulin, C., additional, Michailos, J., additional, Arnaud, F., additional, Cathelin, A., additional, Arcamone, J., additional, Andrieu, F., additional, Garros, X., additional, Gaillard, F., additional, and Batude., P., additional
Published: 2023
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4. 3D monolithic integration: Technological challenges and electrical results

Author: Vinet, M., Batude, P., Tabone, C., Previtali, B., LeRoyer, C., Pouydebasque, A., Clavelier, L., Valentian, A., Thomas, O., Michaud, S., Sanchez, L., Baud, L., Roman, A., Carron, V., Nemouchi, F., Mazzocchi, V., Grampeix, H., Amara, A., Deleonibus, S., and Faynot, O.
Published: 2011
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5. Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium

Author: Koffel, S., Kaiser, R.J., Bauer, A.J., Amon, B., Pichler, P., Lorenz, J., Frey, L., Scheiblin, P., Mazzocchi, V., Barnes, J.-P., and Claverie, A.
Published: 2011
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6. High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

Author: Le Royer, C., Damlencourt, J.-F., Vincent, B., Romanjek, K., Le Cunff, Y., Grampeix, H., Mazzocchi, V., Carron, V., Némouchi, F., Hartmann, J.-M., Arvet, C., Vizioz, C., Tabone, C., Hutin, L., Batude, P., and Vinet, M.
Published: 2011
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7. Electrical Safety During Transplantation

Author: Amicucci, G.L., Di Lollo, L., Fiamingo, F., Mazzocchi, V., Platania, G., Ranieri, D., Razzano, R., Camin, G., Sebastiani, G., and Gentile, P.
Published: 2010
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8. Material and integration challenges for large scale Si quantum computing

Author: Vinet, M., primary, Bedecarrats, T., additional, Paz, B. Cardoso, additional, Martinez, B., additional, Chanrion, E., additional, Catapano, E., additional, Contamin, L., additional, Pallegoix, L., additional, Venitucci, B., additional, Mazzocchi, V., additional, Niebojewski, H., additional, Bertrand, B., additional, Rambal, N., additional, Thomas, C., additional, Charbonnier, J., additional, Mortemousque, P.-A., additional, Hartmann, J.-M., additional, Nowak, E., additional, Thonnart, Y., additional, Billiot, G., additional, Casse, M., additional, Urdampilleta, M., additional, Niquet, Y.-M., additional, Perruchot, F., additional, De Franceschi, S., additional, and Meunier, T., additional
Published: 2021
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9. High performance 70 nm gate length germanium-on-insulator pMOSFET with high- k/metal gate

Author: Romanjek, K., Hutin, L., Le Royer, C., Pouydebasque, A., Jaud, M.-A., Tabone, C., Augendre, E., Sanchez, L., Hartmann, J.-M., Grampeix, H., Mazzocchi, V., Soliveres, S., Truche, R., Clavelier, L., Scheiblin, P., Garros, X., Reimbold, G., Vinet, M., Boulanger, F., and Deleonibus, S.
Published: 2009
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10. Doping of germanium by phosphorus implantation: Prediction of diffused profiles with simulation

Author: Koffel, S., Scheiblin, P., Claverie, A., and Mazzocchi, V.
Published: 2008
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11. Opportunities and challenges brought by 3D-sequential integration

Author: Batude, P., primary, Brunet, L., additional, Fenouillet-Beranger, C., additional, Lattard, D., additional, Andrieu, F., additional, Vinet, M., additional, Brevard, L., additional, Ribotta, M., additional, Previtali, B., additional, Tabone, C., additional, Ponthenier, F., additional, Rambal, N., additional, Sideris, P., additional, Garros, X., additional, Casse, M., additional, Theodorou, C., additional, Sklenard, B., additional, Lacord, J., additional, Besson, P., additional, Fournel, F., additional, Kerdiles, S., additional, Acosta-Alba, P., additional, Mazzocchi, V., additional, Hartmann, J-M., additional, Mazen, F., additional, Thuries, S., additional, Billoint, O., additional, Vivet, P., additional, Sicard, G., additional, Cibrario, G., additional, Mouhdach, M., additional, Giraud, B., additional, Ribotta, CM., additional, and Lapras, V., additional
Published: 2021
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12. Towards scalable quantum computing based on silicon spin

Author: Crippa, A., Ezzouch, R., Aprá, A., Amisse, A., Laviéville, R., Hutin, L., Bertrand, B., Vinet, M., Urdampilleta, M., Meunier, T., Sanquer, M., Jehl, X., Maurand, R., de Franceschi, S., Thonnart, Y., Pillonnet, G., Billiot, G., Jacquinot, H., Casse, M., Barraud, S., Kim, Y.-J., Mazzocchi, V., Bohuslavskyi, H., Bourdet, L., Niquet, Y.-M., Venitucci, B., Jadot, B., Chanrion, E., Mortemousque, P.-A., Spence, C., PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
Subjects: [PHYS]Physics [physics], Physics, Quantum decoherence, Quantum error correction, Quantum mechanics, Qubit, Physical system, Quantum Physics, Supercomputer, Quantum, ComputingMilieux_MISCELLANEOUS, Quantum computer, Spin-½
Abstract: Quantum computing (QC) is expected to extend the high performance computing roadmap [1]–[2] at the condition to be able to run a large number of errorless quantum operations, typically. over a billion. It is out of reach in actual physical systems because of the quantum decoherence. As a consequence, quantum error correction techniques, which utilize the idea of redundant encoding, have been introduced to cure for the errors [3]–[5]. In state-of-the-art codes, with error thresholds or fidelities around 10−2 in Si spin qubits, it is expected that logical qubits will be made out of a few thousands or more of physical qubits [6], bringing the number of required physical qubits to perform relevant quantum calculations to at least a million.
Published: 2019
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13. Biweekly (BW) chemotherapy (CHT) with oxaliplatin (OHP), irinotecan (CPT-11), infusional 5-fluorouracil/folinic acid (FU/FA) in patients (pts) with metastatic colorectal cancer (MCRC) pretreated with CPT-11- or OHP-based CHT: 1503

Author: Mini, E., Nobili, S., Mazzocchi, V., Del Buono, S., Scicolone, S., Giglioni, B., and Mazzei, T.
Published: 2003

14. Towards scalable quantum computing based on silicon spin

Author: Meunier, T., primary, Hutin, L., additional, Bertrand, B., additional, Thonnart, Y., additional, Pillonnet, G., additional, Billiot, G., additional, Jacquinot, H., additional, Casse, M., additional, Barraud, S., additional, Kim, Y.-J., additional, Mazzocchi, V., additional, Amisse, A., additional, Bohuslavskyi, H., additional, Bourdet, L., additional, Crippa, A., additional, Jehl, X., additional, Maurand, R., additional, Niquet, Y.-M., additional, Sanquer, M., additional, Venitucci, B., additional, Jadot, B., additional, Chanrion, E., additional, Mortemousque, P.-A., additional, Spence, C., additional, Urdampilleta, M., additional, De Franceschi, S., additional, and Vinet, M., additional
Published: 2019
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15. A review of the full 500°C low temperature technological modules development for high performance and reliable 3D Sequential Integration

Author: Fenouillet-Beranger, C., primary, Brunet, L., additional, Batude, P., additional, Andrieu, F., additional, Micout, J., additional, Previtali, B., additional, Pedini, J-M., additional, Mazzocchi, V., additional, Acosta-Alba, P., additional, Kerdiles, S., additional, Beugin, V., additional, Guerin, C., additional, Vizioz, C., additional, Ponthenier, F., additional, Rambal, N., additional, Casse, M., additional, Garros, X., additional, Chevalliez, S., additional, Aussenac, F., additional, and Vinet, M., additional
Published: 2019
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16. 99.992% 28Si CVD-grown epilayer on 300 mm substrates for large scale integration of silicon spin qubits

Author: Mazzocchi, V., primary, Sennikov, P.G., additional, Bulanov, A.D., additional, Churbanov, M.F., additional, Bertrand, B., additional, Hutin, L., additional, Barnes, J.P., additional, Drozdov, M.N., additional, Hartmann, J.M., additional, and Sanquer, M., additional
Published: 2019
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17. Towards scalable silicon quantum computing

Author: Vinet, M., primary, Hutin, L., additional, Bertrand, B., additional, Barraud, S., additional, Hartmann, J.-M., additional, Kim, Y.-J., additional, Mazzocchi, V., additional, Amisse, A., additional, Bohuslavskyi, H., additional, Bourdet, L., additional, Crippa, A., additional, Jehl, X., additional, Maurand, R., additional, Niquet, Y.-M., additional, Sanquer, M., additional, Venitucci, B., additional, Jadot, B., additional, Chanrion, E., additional, Mortemousque, P.-A., additional, Spence, C., additional, Urdampilleta, M., additional, De Franceschi, S., additional, and Meunier, T., additional
Published: 2018
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18. Breakthroughs in 3D Sequential technology

Author: Brunet, L., primary, Fenouillet-Beranger, C., additional, Batude, P., additional, Beaurepaire, S., additional, Ponthenier, F., additional, Rambal, N., additional, Mazzocchi, V., additional, Pin, J-B., additional, Acosta-Alba, P., additional, Kerdiles, S., additional, Besson, P., additional, Fontaine, H., additional, Lardin, T., additional, Fournel, F., additional, Larrey, V., additional, Mazen, F., additional, Balan, V., additional, Morales, C., additional, Guerin, C., additional, Jousseaume, V., additional, Federspiel, X., additional, Ney, D., additional, Garros, X., additional, Roman, A., additional, Scevola, D., additional, Perreau, P., additional, Kouemeni-Tchouake, F., additional, Arnaud, L., additional, Scibetta, C., additional, Chevalliez, S., additional, Aussenac, F., additional, Aubin, J., additional, Reboh, S., additional, Andrieu, F., additional, Maitrejean, S., additional, and Vinet, M., additional
Published: 2018
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19. High performance low temperature FinFET with DSPER, gate last and Self Aligned Contact for 3D sequential mtegration

Author: Micout, J., primary, Lapras, V., additional, Batude, P., additional, Fenouillet-Beranger, C., additional, Lacord, J., additional, Sklenard, B., additional, Mathieu, B., additional, Rafhay, Q., additional, Mazzocchi, V., additional, Colinge, J.-P., additional, Lachal, L., additional, Garros, X., additional, Casse, M., additional, Toffoli, A., additional, Romano, G., additional, Allain, F., additional, Brunet, L., additional, Hartmann, J.-M., additional, Bortolin, R., additional, Mazen, F., additional, Barraud, S., additional, Rambal, N., additional, Tabone, C., additional, Samson, M.-P., additional, Besombes, P., additional, Delaye, V., additional, Saghi, Z., additional, Loup, V., additional, Comboroure, C., additional, Balan, V., additional, Desvoivres, L., additional, Vizioz, C., additional, Ghibaudo, G., additional, and Vinet, M., additional
Published: 2017
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20. Towards 500°C SPER activated devices for 3D sequential integration

Author: Micout, J., primary, Sklenard, B., additional, Batude, P., additional, Berthelon, R., additional, Rafhay, Q., additional, Lacord, J., additional, Mathieu, B., additional, Pasini, L., additional, Saghi, Z., additional, Delaye, V., additional, Brunet, L., additional, Fenouillet-Beranger, C., additional, Joblot, S., additional, Mazen, F., additional, Mazzocchi, V., additional, Colinge, J-P., additional, Ghibaudo, G., additional, and Vinet, M., additional
Published: 2017
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21. Recent advances in low temperature process in view of 3D VLSI integration

Author: Fenouillet-Beranger, C., primary, Batude, P., additional, Brunet, L., additional, Mazzocchi, V., additional, Lu, C-M.V., additional, Deprat, F., additional, Micout, J., additional, Samson, M-P., additional, Previtali, B., additional, Besombes, P., additional, Rambal, N., additional, Lapras, V., additional, Andrieu, F., additional, Billoint, O., additional, Brocard, M., additional, Thuries, S., additional, Cibrario, G., additional, Acosta-Alba, P., additional, Mathieu, B., additional, Kerdiles, S., additional, Nemouchi, F., additional, Arvet, C., additional, Besson, P., additional, Loup, V., additional, Gassilloud, R., additional, Garros, X., additional, Leroux, C., additional, Beugin, V., additional, Guerin, C., additional, Benoit, D., additional, Pasini, L., additional, Hartmann, J-M., additional, and Vinet, M., additional
Published: 2016
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22. High performance CMOS FDSOI devices activated at low temperature

Author: Pasini, L., primary, Batude, P., additional, Lacord, J., additional, Casse, M., additional, Mathieu, B., additional, Sklenard, B., additional, Luce, F. Piegas, additional, Micout, J., additional, Payet, A., additional, Mazen, F., additional, Besson, P., additional, Ghegin, E., additional, Borrel, J., additional, Daubriac, R., additional, Hutin, L., additional, Blachier, D., additional, Barge, D., additional, Chhun, S., additional, Mazzocchi, V., additional, Cros, A., additional, Barnes, J-P., additional, Saghi, Z., additional, Delaye, V., additional, Rambal, N., additional, Lapras, V., additional, Mazurier, J., additional, Weber, O., additional, Andrieu, F., additional, Brunet, L., additional, Fenouillet-Beranger, C., additional, Rafhay, Q., additional, Ghibaudo, G., additional, Cristiano, F., additional, Haond, M., additional, Boeuf, F., additional, and Vinet, M., additional
Published: 2016
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23. Recent advances in 3D VLSI integration

Author: Fenouillet-Beranger, C., primary, Batude, P., additional, Brunet, L., additional, Mazzocchi, V., additional, Lu, C-M. V., additional, Deprat, F., additional, Micout, J., additional, Samson, M-P., additional, Previtali, B., additional, Besombes, P., additional, Rambal, N., additional, Andrieu, F., additional, Billoint, O., additional, Brocard, M., additional, Thuries, S., additional, Cibrario, G., additional, and Vinet, M., additional
Published: 2016
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24. Thermal analysis and phase relations in the pseudobinary system La2W2O9–Li2W2O7

Author: de Moraes, J. R., additional, Klimm, D., additional, Mazzocchi, V. L., additional, Parente, C. B. R., additional, Ganschow, S., additional, and Baldochi, S. L., additional
Published: 2015
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25. Neutron multiple diffraction used as a tool for structural studies

Author: Parente, C. B. R., primary and Mazzocchi, V. L., additional
Published: 2014
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26. Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs

Author: Andrieu, F., primary, Casse, M., additional, Baylac, E., additional, Perreau, P., additional, Nier, O., additional, Rideau, D., additional, Berthelon, R., additional, Pourchon, F., additional, Pofelski, A., additional, De Salvo, B., additional, Gallon, C., additional, Mazzocchi, V., additional, Barge, D., additional, Gaumer, C., additional, Gourhant, O., additional, Cros, A., additional, Barral, V., additional, Ranica, R., additional, Planes, N., additional, Schwarzenbach, W., additional, Richard, E., additional, Josse, E., additional, Weber, O., additional, Arnaud, F., additional, Vinet, M., additional, Faynot, O., additional, and Haond, M., additional
Published: 2014
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27. Pattern of care and effectiveness of treatment for glioblastoma patients in the real world: Results from a prospective population-based registry. Could survival differ in a high-volume center?

Author: Brandes, Alba A., primary, Franceschi, Enrico, additional, Ermani, Mario, additional, Tosoni, Alicia, additional, Albani, Fiorenzo, additional, Depenni, Roberta, additional, Faedi, Marina, additional, Pisanello, Anna, additional, Crisi, Girolamo, additional, Urbini, Benedetta, additional, Dazzi, Claudio, additional, Cavanna, Luigi, additional, Mucciarini, Claudia, additional, Pasini, Giuseppe, additional, Bartolini, Stefania, additional, Marucci, Gianluca, additional, Morandi, Luca, additional, Zunarelli, Elena, additional, Cerasoli, Serenella, additional, Gardini, Giorgio, additional, Lanza, Giovanni, additional, Silini, Enrico Maria, additional, Cavuto, Silvio, additional, Baruzzi, Agostino, additional, Baruzzi, A., additional, Albani, F., additional, Calbucci, F., additional, D'Alessandro, R., additional, Michelucci, R., additional, Brandes, A., additional, Eusebi, V., additional, Ceruti, S., additional, Fainardi, E., additional, Tamarozzi, R., additional, Emiliani, E., additional, Cavallo, M., additional, Franceschi, E., additional, Tosoni, A., additional, Fiorica, F., additional, Valentini, A., additional, Depenni, R., additional, Mucciarini, C., additional, Crisi, G., additional, Sasso, E., additional, Biasini, C., additional, Cavanna, L., additional, Guidetti, D., additional, Marcello, N., additional, Pisanello, A., additional, Cremonini, A.M., additional, Guiducci, G., additional, de Pasqua, S., additional, Testoni, S., additional, Agati, R., additional, Ambrosetto, G., additional, Bacci, A., additional, Baldin, E., additional, Baldrati, A., additional, Barbieri, E., additional, Bartolini, S., additional, Bellavista, E., additional, Bisulli, F., additional, Bonora, E., additional, Bunkheila, F., additional, Carelli, V., additional, Crisci, M., additional, Dall'Occa, P., additional, de Biase, D., additional, Ferro, S., additional, Franceschi, C., additional, Frezza, G., additional, Grasso, V., additional, Leonardi, M., additional, Marucci, G., additional, Mazzocchi, V., additional, Morandi, L., additional, Mostacci, B., additional, Palandri, G., additional, Pasini, E., additional, Pastore Trossello, M., additional, Pession, A., additional, Ragazzi, M., additional, Riguzzi, P., additional, Rinaldi, R., additional, Rizzi, S., additional, Romeo, G., additional, Spagnolli, F., additional, Tinuper, P., additional, Trocino, C., additional, Cerasoli, S., additional, Dall'Agata, M., additional, Faedi, M., additional, Frattarelli, M., additional, Gentili, G., additional, Giovannini, A., additional, Iorio, P., additional, Pasquini, U., additional, Galletti, G., additional, Guidi, C., additional, Neri, W., additional, Patuelli, A., additional, Strumia, S., additional, Casmiro, M., additional, Gamboni, A., additional, Rasi, F., additional, Cruciani, G., additional, Cenni, P., additional, Dazzi, C., additional, Guidi, AR., additional, Zumaglini, F., additional, Amadori, A., additional, Pasini, G., additional, Pasquinelli, M., additional, Pasquini, E., additional, Polselli, A., additional, Ravasio, A., additional, Viti, B., additional, Sintini, M., additional, Ariatti, A., additional, Bertolini, F., additional, Bigliardi, G., additional, Carpeggiani, P., additional, Cavalleri, F., additional, Meletti, S., additional, Nichelli, P., additional, Pettorelli, E., additional, Pinna, G., additional, Zunarelli, E., additional, Artioli, F., additional, Bernardini, I., additional, Costa, M., additional, Greco, G., additional, Guerzoni, R., additional, Stucchi, C., additional, Iaccarino, C., additional, Rizzi, R., additional, Zuccoli, G., additional, Api, P., additional, Cartei, F., additional, Fallica, E., additional, Granieri, E., additional, Latini, F., additional, Lelli, G., additional, Monetti, C., additional, Ramponi, V., additional, Saletti, A., additional, Schivalocchi, R., additional, Seraceni, S., additional, Tola, M.R., additional, Urbini, B., additional, Giorgi, C., additional, Montanari, E., additional, Cerasti, D., additional, Crafa, P., additional, Dascola, I., additional, Florindo, I., additional, Mazza, S., additional, Servadei, F., additional, Silini, EM., additional, Torelli, P., additional, Immovilli, P., additional, Morelli, N., additional, and Vanzo, C., additional
Published: 2014
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28. Neutron Powder Diffraction Measurements of the Spinel MgGa 2 O 4 :Cr 3+ - A Comparative Study between the High Flux Diffractometer D2B at the ILL and the High Resolution Powder Diffractometer Aurora at IPEN

Author: Silva, M A F M da, Sosman, L P, Yokaichiya, F, Mazzocchi, V L, Parente, C B R, Mestnik-Filho, J, Henry, P F, Bordallo, H N, Silva, M A F M da, Sosman, L P, Yokaichiya, F, Mazzocchi, V L, Parente, C B R, Mestnik-Filho, J, Henry, P F, and Bordallo, H N
Abstract: Optical materials that emit from the visible to the near-infrared spectral region are of great interest due to their possible application as tunable radiation sources, as signal transmission, display, optoelectronics signal storage, cellulose industry as well as in dosimetry. One important family of such systems are the spinel compounds doped with Cr 3+ , in which the physical the properties are related to the insertion of punctual defects in the crystalline structure. The purpose of our work is two fold. First, we compare the luminescence of the MgGa 2 O 4 -Ga 2 O 3 system with the single phase Ga 2 O 3 and MgGa 2 O 4 and relate structural changes observed in MgGa 2 O 4 -Ga 2 O 3 system to the optical properties, and secondly, to compare the neutron powder diffraction results obtained using two diffractometers: D2B located at the ILL (Grenoble, France) and Aurora located at IPEN (SÃ£o Paulo, Brazil). In the configuration chosen, Aurora shows an improved resolution, which is related to the design of its silicon focusing monochromator.
Published: 2012

29. Neutron powder diffraction measurements of the spinel MgGa 2O4:Cr3+ - A comparative study between the high flux diffractometer D2B at the ILL and the high resolution powder diffractometer Aurora at IPEN

Author: Da Silva, M. A.F.M., Sosman, L. P., Yokaichiya, F., Mazzocchi, V. L., Parente, C. B.R., Mestnik-Filho, J., Henry, P. F., Bordallo, H. N., Da Silva, M. A.F.M., Sosman, L. P., Yokaichiya, F., Mazzocchi, V. L., Parente, C. B.R., Mestnik-Filho, J., Henry, P. F., and Bordallo, H. N.
Abstract: Optical materials that emit from the visible to the near-infrared spectral region are of great interest due to their possible application as tunable radiation sources, as signal transmission, display, optoelectronics signal storage, cellulose industry as well as in dosimetry. One important family of such systems are the spinel compounds doped with Cr3+, in which the physical the properties are related to the insertion of punctual defects in the crystalline structure. The purpose of our work is two fold. First, we compare the luminescence of the MgGa2O4-Ga2O 3 system with the single phase Ga2O3 and MgGa2O4 and relate structural changes observed in MgGa2O4-Ga2O3 system to the optical properties, and secondly, to compare the neutron powder diffraction results obtained using two diffractometers: D2B located at the ILL (Grenoble, France) and Aurora located at IPEN (São Paulo, Brazil). In the configuration chosen, Aurora shows an improved resolution, which is related to the design of its silicon focusing monochromator.
Published: 2012

30. Intrinsic features of the magnetoeletric coupling mechanism in displacive multiferroics

Author: Freitas, V. F., primary, Montanher, D. Z., additional, Bonadio, T. G. M., additional, Mazzocchi, V. L., additional, Mestnik-Filho, J., additional, Parente, C. B. R., additional, Garcia, D., additional, Eiras, J. A., additional, Cótica, L. F., additional, and Santos, I. A., additional
Published: 2013
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31. FDSOI: A solution to suppress boron deactivation in low temperature processed devices

Author: Xu, C., primary, Batude, P., additional, Sklenard, B., additional, Vinet, M., additional, Mouis, M., additional, Previtali, B., additional, Liu, F. Y., additional, Guerrero, J., additional, Yckache, K., additional, Rivallin, P., additional, Mazzocchi, V., additional, Cristoloveanu, S., additional, Faynot, O., additional, and Poiroux, T., additional
Published: 2012
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32. Neutron Powder Diffraction Measurements of the Spinel MgGa2O4:Cr3+- A Comparative Study between the High Flux Diffractometer D2B at the ILL and the High Resolution Powder Diffractometer Aurora at IPEN

Author: da Silva, M A F M, primary, Sosman, L P, additional, Yokaichiya, F, additional, Mazzocchi, V L, additional, Parente, C B R, additional, Mestnik-Filho, J, additional, Henry, P F, additional, and Bordallo, H N, additional
Published: 2012
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33. Prognostic factors in newly diagnosed glioblastoma: Have we missed gender?

Author: Franceschi, E., primary, Tosoni, A., additional, Bartolini, S., additional, Scopece, L., additional, Lombardo, L., additional, Poggi, R., additional, Mazzocchi, V., additional, La Torre, L., additional, Ermani, M., additional, and Brandes, A. A., additional
Published: 2011
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34. 3D monolithic integration

Author: Batude, P., primary, Vinet, M., additional, Pouydebasque, A., additional, Le Royer, C., additional, Previtali, B., additional, Tabone, C., additional, Hartmann, J.-M., additional, Sanchez, L., additional, Baud, L., additional, Carron, V., additional, Toffoli, A., additional, Allain, F., additional, Mazzocchi, V., additional, Lafond, D., additional, Deleonibus, S., additional, and Faynot, O., additional
Published: 2011
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35. High Temperature Ion Implantation Evaluation In Silicon & Germanium

Author: Milési, F., primary, Leveneur, J., additional, Mazzocchi, V., additional, Mazen, F., additional, Gonzatti, F., additional, Yckache, K., additional, Matsuo, Jiro, additional, Kase, Masataka, additional, Aoki, Takaaki, additional, and Seki, Toshio, additional
Published: 2011
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36. Photonics and electronics integration in the HELIOS project

Author: Fedeli, J. M., primary, Augendre, E., additional, Hartmann, J. M., additional, Vivien, L., additional, Grosse, P., additional, Mazzocchi, V., additional, Bogaerts, W., additional, Van Thourhout, D., additional, and Schrank, F., additional
Published: 2010
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37. 20nm gate length trigate pFETs on strained SGOI for high performance CMOS

Author: Hutin, L., primary, Casse, M., additional, Le Royer, C., additional, Damlencourt, J.-F., additional, Pouydebasque, A., additional, Xu, C., additional, Tabone, C., additional, Hartmann, J.-M., additional, Carron, V., additional, Grampeix, H., additional, Mazzocchi, V., additional, Truche, R., additional, Weber, O., additional, Batude, P., additional, Garros, X., additional, Clavelier, L., additional, Vinet, M., additional, and Faynot, O., additional
Published: 2010
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38. Efficacy of tailored treatment for high- and low-risk medulloblastoma in adults: A large prospective phase II trial.

Author: Brandes, A. A., primary, Franceschi, E., additional, Tosoni, A., additional, Frezza, G., additional, Agati, R., additional, Maestri, A., additional, Ghimenton, C., additional, Mazzocchi, V., additional, Scopece, L., additional, and Ermani, M., additional
Published: 2010
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39. GeOI pMOSFETs Scaled Down to 30-nm Gate Length With Record Off-State Current

Author: Hutin, L., primary, Le Royer, C., additional, Damlencourt, J.-F., additional, Hartmann, J.-M., additional, Grampeix, H., additional, Mazzocchi, V., additional, Tabone, C., additional, Previtali, B., additional, Pouydebasque, A., additional, Vinet, M., additional, and Faynot, O., additional
Published: 2010
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40. A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio

Author: Hutin, L., primary, Le Royer, C., additional, Damlencourt, J.-F., additional, Hartmann, J.-M., additional, Grampeix, H., additional, Mazzocchi, V., additional, Arvet, C., additional, Tabone, C., additional, Previtali, B., additional, Loup, V., additional, Roure, M.-C., additional, Pouydebasque, A., additional, Lafond, D., additional, Vinet, M., additional, Clavelier, L., additional, and Faynot, O., additional
Published: 2010
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41. Advances in 3D CMOS sequential integration

Author: Batude, P., primary, Vinet, M., additional, Pouydebasque, A., additional, Le Royer, C., additional, Previtali, B., additional, Tabone, C., additional, Hartmann, J.-M., additional, Sanchez, L., additional, Baud, L., additional, Carron, V., additional, Toffoli, A., additional, Allain, F., additional, Mazzocchi, V., additional, Lafond, D., additional, Thomas, O., additional, Cueto, O., additional, Bouzaida, N., additional, Fleury, D., additional, Amara, A., additional, Deleonibus, S., additional, and Faynot, O., additional
Published: 2009
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42. Diffusion and activation of Boron and Phosphorus in preamorphized and crystalline Germanium using ultra fast spike anneal

Author: Mazzocchi, V., primary, Pages, X., additional, Py, M., additional, Barnes, J P, additional, Vanormelingen, K., additional, Hutin, L., additional, Truche, R., additional, Vermont, P., additional, Vinet, M., additional, Le Royer, C., additional, and Yckache, K., additional
Published: 2009
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43. 8705 Change in MGMT methylation status between first surgery for newly diagnosed glioblastoma and second surgery for recurrence: clinical implications

Author: Brandes, A., primary, Franceschi, E., additional, Tosoni, A., additional, Fioravanti, A., additional, Agati, R., additional, Andreoli, A., additional, Mazzocchi, V., additional, Morandi, L., additional, Bartolini, S., additional, and Ermani, M., additional
Published: 2009
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44. 8723 MGMT methylation status does not provide adjunctive prognostic information in pts with 1p/19q intact anaplastic gliomas

Author: Franceschi, E., primary, Tosoni, A., additional, Ermani, M., additional, Spagnolli, F., additional, Torre, L. La, additional, Tomasello, C., additional, Bacci, A., additional, Morandi, L., additional, Mazzocchi, V., additional, and Brandes, A.A., additional
Published: 2009
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45. Boron and Phosphorus dopant activation in Germanium using laser annealing with and without preamorphization implant

Author: Mazzocchi, V., primary, Sabatier, C., additional, Py, M., additional, Huet, K., additional, Boniface, C., additional, Barnes, J-P., additional, Hutin, L., additional, Delayer, V., additional, Morel, D., additional, Vinet, M., additional, Le Royer, C., additional, Venturini, J., additional, and Yckache, K., additional
Published: 2009
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46. High performance 70nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

Author: Romanjek, K., primary, Hutin, L., additional, Le Royer, C., additional, Pouydebasque, A., additional, Jaud, M.-A., additional, Tabone, C., additional, Augendre, E., additional, Sanchez, L., additional, Hartmann, J.-M., additional, Grampeix, H., additional, Mazzocchi, V., additional, Soliveres, S., additional, Truche, R., additional, Clavelier, L., additional, Scheiblin, P., additional, Garros, X., additional, Reimbold, G., additional, Vinet, M., additional, Boulanger, F., additional, and Deleonibus, S., additional
Published: 2009
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47. Change in MGMT methylation status between first and second surgery for recurrence: Clinical implications

Author: Brandes, A. A., primary, Franceschi, E., additional, Tosoni, A., additional, Fioravanti, A., additional, Agati, R., additional, Andreoli, A., additional, Mazzocchi, V., additional, Morandi, L., additional, Bartolini, S., additional, and Ermani, M., additional
Published: 2009
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48. High-k/metal Gate GeOI pMOSFET: Validation of the Lim&Fossum model for interface trap density extraction

Author: Romanjek, K., primary, Le Royer, C., additional, Pouydebasque, A., additional, Augendre, E., additional, Vinet, M., additional, Tabone, C., additional, Sanchez, L., additional, Hartmann, J.-M., additional, Grampeix, H., additional, Mazzocchi, V., additional, Clavelier, L., additional, Garros, X., additional, Reimbold, G., additional, Naval, N., additional, Boulanger, F., additional, and Deleonibus, S., additional
Published: 2008
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49. Bimonthly Chemotherapy with Oxaliplatin, Irinotecan, Infusional 5-Fluorouracil/Folinic Acid in Patients with Metastatic Colorectal Cancer Pretreated with Irinotecan- or Oxaliplatin-Based Chemotherapy

Author: Nobili, S., primary, Checcacci, D., additional, Filippelli, F., additional, Del Buono, S., additional, Mazzocchi, V., additional, Mazzei, T., additional, and Mini, E., additional
Published: 2008
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50. Problems in the thermal investigation of the BaF2-YF3 system

Author: Nakamura, G. H. G., primary, Baldochi, S. L., additional, Mazzocchi, V. L., additional, Parente, C. B. R., additional, Valério, M. E. G., additional, and Klimm, D., additional
Published: 2008
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