1. Synthesis, characterization and modeling of high quality ferromagnetic Cr-doped AlN thin films
- Author
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Wu, Stephen Y., Liu, H. X., Gu, Lin, Singh, R. K., Budd, L., van Schilfgaarde, M., McCartney, M. R., Smith, David J., and Newman, N.
- Subjects
Condensed Matter - Materials Science - Abstract
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature., Comment: 13 pages, 4 figures, submitted to APL
- Published
- 2002
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