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Resonant soft x-ray scattering (RSXS) is a leading probe of valence band order in materials best known for detecting charge density wave order in the copper-oxide superconductors. One of the biggest limitations on the RSXS technique is the presence of a severe fluorescence background which, like the RSXS cross section itself, is enhanced under resonant conditions. This background prevents the study of weak signals such as diffuse scattering from glassy or fluctuating order that is spread widely over momentum space. Recent advances in superconducting transition edge sensor (TES) detectors have led to major improvements in energy resolution and detection efficiency in the soft x-ray range. Here, we perform a RSXS study of stripe-ordered La$_{2-x}$Ba$_x$CuO$_4$ at the Cu $L_{3/2}$ edge (932.2 eV) using a TES detector with 1.5 eV resolution, to evaluate its utility for mitigating the fluorescence background problem. We find that, for suitable degree of detuning from the resonance, the TES rejects the fluorescence background, leading to a 5 to 10 times improvement in the statistical quality of the data compared to an equivalent, energy-integrated measurement. We conclude that a TES presents a promising approach to reducing background in RSXS studies and may lead to new discoveries in materials exhibiting valence band order that is fluctuating or glassy., Comment: 10 pages, 6 figures

Arguably the most intriguing aspect of the physics of cuprates is the close proximity between the record high-Tc superconductivity (HTSC) and the antiferromagnetic charge-transfer insulating state driven by Mott-like electron correlations. These are responsible for the intimate connection between high and low-energy scale physics, and their key role in the mechanism of HTSC was conjectured very early on. More recently, the detection of quantum oscillations in high-magnetic field experiments on YBa2Cu3O6+x (YBCO) has suggested the existence of a Fermi surface of well-defined quasiparticles in underdoped cuprates, lending support to the alternative proposal that HTSC might emerge from a Fermi liquid across the whole cuprate phase diagram. Discriminating between these orthogonal scenarios hinges on the quantitative determination of the elusive quasiparticle weight Z, over a wide range of hole-doping p. By means of angle-resolved photoemission spectroscopy (ARPES) on in situ doped YBCO, and following the evolution of bilayer band-splitting, we show that the overdoped metal electronic structure (0.25

Atomic nanowires formed by Au on Ge(001) are scrutinized for the band topology of the conduction electron system by k-resolved photoemission. Two metallic electron pockets are observed. Their Fermi surface sheets form straight lines without undulations perpendicular to the chains within experimental uncertainty. The electrons hence emerge as strictly confined to one dimension. Moreover, the system is stable against a Peierls distortion down to 10 K, lending itself for studies of the spectral function. Indications for unusually low spectral weight at the chemical potential are discussed., Comment: 4 pages, 4 figures - revised version with added Fig. 2e) and additional references

We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered iron-arsenic superconductor, Ba(1-x)K(x)Fe2As2 and non-supercondcuting BaFe2As2. Our study indicates that the Fermi surface of the undoped, parent compound BaFe$_2$As$_2$ consists of hole pocket(s) at Gamma (0,0) and larger electron pocket(s) at X (1,0), in general agreement with full-potential linearized plane wave (FLAPW) calculations. Upon doping with potassium, the hole pocket expands and the electron pocket becomes smaller with its bottom approaching the chemical potential. Such an evolution of the Fermi surface is consistent with hole doping within a rigid band shift model. Our results also indicate that FLAPW calculation is a reasonable approach for modeling the electronic properties of both undoped and K-doped iron arsenites., Comment: 4 pages, 3 figures

We use angle-resolved photoemission spectroscopy (ARPES) to investigate the electronic properties of the newly discovered oxypnictide superconductor, NdFeAsO_{1-x}F_x. We find a well-defined Fermi surface that consists of a large hole pocket at the Brillouin zone center and a smaller electron pocket in each corner of the Brillouin zone. The overall location and shape of the Fermi surface agrees reasonably well with calculations. The band dispersion is quite complicated with many flat bands located just below the chemical potential. We observe a superconducting gap of 20 meV, which indicates that this system is in the strong coupling regime. The emergence of a coherent peak below the critical temperature Tc and diminished spectral weight at the chemical potential above Tc closely resembles the spectral characteristics of the cuprates., Comment: 4 pages, 3 figures. Author names and typos corrected; Fig. 3 upgraded

The discovery of quantum oscillations in the normal-state electrical resistivity of YBa2Cu3O6.5 provides the first evidence for the existence of Fermi surface (FS) pockets in an underdoped cuprate. However, the pockets' electron vs. hole character, and the very interpretation in terms of closed FS contours, are the subject of considerable debate. Angle-resolved photoemission spectroscopy (ARPES), with its ability to probe electronic dispersion as well as the FS, is ideally suited to address this issue. Unfortunately, the ARPES study of YBa2C3O7-d (YBCO) has been hampered by the technique's surface sensitivity. Here we show that this stems from the polarity and corresponding self-doping of the YBCO surface. By in-situ deposition of potassium atoms on the cleaved surface, we are able to continuously tune the doping of a single sample from the heavily overdoped to the underdoped regime. This reveals the progressive collapse of the normal-metal-like FS into four disconnected nodal FS arcs, or perhaps into hole but not electron pockets, in underdoped YBCO6.5., Comment: A high-resolution version can be found at http://www.physics.ubc.ca/~quantmat/ARPES/PUBLICATIONS/Articles/YBCO_polar_ARPES.pdf

The unusual transport properties of graphene are the direct consequence of a peculiar bandstructure near the Dirac point. We determine the shape of the pi bands and their characteristic splitting, and the transition from a pure 2D to quasi-2D behavior for 1 to 4 layers of graphene by angle-resolved photoemission. By exploiting the sensitivity of the pi bands to the electronic potential, we derive the layer-dependent carrier concentration, screening length and strength of interlayer interaction by comparison with tight binding calculations, yielding a comprehensive description of multilayer graphene's electronic structure.

This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to approximately one graphene layer. The growth and characterization were carried out in ultrahigh vacuum (UHV) conditions. The growth process and sample quality were monitored by low-energy electron diffraction, and the thickness of the sample was determined by core level x-ray photoelectron spectroscopy. High-resolution angle-resolved photoemission spectroscopy shows constant energy map patterns, which are very sharp and fully momentum-resolved, but nonetheless not resolution limited. We discuss the implications of this observation in connection with scanning electron microscopy data, as well as with previous studies.

Self-assembled electronic devices, such as quantum dots or switchable molecules, need self-assembled nanowires as connections. We explore the growth of conducting Gd disilicide nanowires at step arrays on Si(111). Atomically smooth wires with large aspect ratios are formed at low coverage and high growth rate (length >1 micron, width 10nm, height 0.6nm). They grow parallel to the steps in the [-1 1 0 ] direction, which is consistent with a lattice match of 0.8% with the a-axis of the hexagonal silicide, together with a large mismatch in all other directions. This mechanism is similar to that observed previously on Si(100). In contrast to Si(100), the wires are always attached to step edges on Si(111) and can thus be grown selectively on regular step arrays., Comment: 3 pages including 4 figures

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA., Comment: 13 pages, 5 figures, accepted by Nanotechnology