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In 1966, Pierre-Gilles de Gennes proposed a non-volatile mechanism for switching superconductivity on and off in a magnetic device. This involved a superconductor (S) sandwiched between ferromagnetic (F) insulators in which the net magnetic exchange field could be controlled through the magnetisation-orientation of the F layers. Because superconducting switches are attractive for a range of applications, extensive studies have been carried out on $F/S/F$ structures. Although these have demonstrated a sensitivity of the superconducting critical temperature ($T_{c}$) to parallel (P) and antiparallel (AP) magnetisation-orientations of the F layers, corresponding shifts in $T_c$ (i.e., ${\Delta}T_c = T_{c,AP} - T_{c,P}$) are lower than predicted with ${\Delta}T_c$ only a small fraction of $T_{c,AP}$, precluding the development of applications. Here, we report $EuS/Au/Nb/EuS$ structures where EuS is an insulating ferromagnet, Nb is a superconductor and Au is a heavy metal. For P magnetisations, the superconducting state in this structure is quenched down to the lowest measured temperature of 20 mK meaning that ${\Delta}T_c/T_{c,AP}$ is practically 1. The key to this so-called absolute switching effect is a sizable spin-mixing conductance at the $EuS/Au$ interface which ensures a robust magnetic proximity effect, unlocking the potential of $F/S/F$ switches for low power electronics.

Antiferromagnets hosting structural or magnetic order that breaks time reversal symmetry are of increasing interest for 'beyond von Neumann computing' applications because the topology of their band structure allows for intrinsic physical properties, exploitable in integrated memory and logic function. One such group are the non-collinear antiferromagnets. Essential for domain manipulation is the existence of small net moments found routinely when the material is synthesised in thin film form and attributed to symmetry-breaking caused by spin canting, either from the Dzyaloshinskii-Moriya interaction or from strain. Although the spin arrangement of these materials makes them highly sensitive to strain, there is little understanding about the influence of local strain fields caused by lattice defects on global properties, such as magnetisation and anomalous Hall effect. This premise is investigated by examining non-collinear films that are either highly lattice mismatched or closely matched to their substrate. In either case, edge dislocation networks are generated and for the former case these extend throughout the entire film thickness, creating large local strain fields. These strain fields allow for finite intrinsic magnetisation in seemly structurally relaxed films and influence the antiferromagnetic domain state and the intrinsic anomalous Hall effect., Comment: 15 pages, 6 figures

Systems with flat bands are ideal for studying strongly correlated electronic states and related phenomena. Among them, kagome-structured metals such as CoSn have been recognized as promising candidates due to the proximity between the flat bands and the Fermi level. A key next step will be to realize epitaxial kagome thin films with flat bands to enable tuning of the flat bands across the Fermi level via electrostatic gating or strain. Here we report the band structures of epitaxial CoSn thin films grown directly on insulating substrates. Flat bands are observed using synchrotron-based angle-resolved photoemission spectroscopy (ARPES). The band structure is consistent with density functional theory (DFT) calculations, and the transport properties are quantitatively explained by the band structure and semiclassical transport theory. Our work paves the way to realize flat band-induced phenomena through fine-tuning of flat bands in kagome materials., Comment: 30 pages, 12 figures

We introduce a phase imaging mechanism for scanning transmission electron microscopy that exploits the complementary intensity changes of transmitted disks at different scattering angles. For scanning transmission electron microscopy, this method provides a straightforward, dose-efficient, and noise-robust phase imaging, from atomic resolution to intermediate length scales, as a function of scattering angles and probe defocus. At atomic resolution, we demonstrate that the phase imaging using the method can detect both light and heavy atomic columns. Furthermore, we experimentally apply the method to the imaging of nanoscale magnetic phases in FeGe samples. Compared with conventional methods, phase retrieval using the new method has higher effective spatial resolution and robustness to non-phase background contrast. Our method complements traditional phase imaging modalities in electron microscopy and has the potential to be extended to other scanning transmission techniques and to characterize many emerging material systems., Comment: Updated link to codes; Fixed wrong labeling in Figures 3; Updated Figure 5

Creating materials that do not exist in nature can lead to breakthroughs in science and technology. Magnetic skyrmions are topological excitations that have attracted great attention recently for their potential applications in low power, ultrahigh density memory. A major challenge has been to find materials that meet the dual requirement of small skyrmions stable at room temperature. Here we meet both these goals by developing epitaxial FeGe films with excess Fe using atomic layer molecular beam epitaxy (MBE) far from thermal equilibrium. Our novel atomic layer design permits the incorporation of 20% excess Fe while maintaining a non-centrosymmetric crystal structure supported by theoretical calculations and necessary for stabilizing skyrmions. We show that the Curie temperature is well above room temperature, and that the skyrmions probed by topological Hall effect have sizes down to 15 nm as imaged by Lorentz transmission electron microscopy (LTEM) and magnetic force microscopy (MFM). Our results illustrate new avenues for creating artificial materials tailored at the atomic scale that can impact nanotechnology., Comment: 22 figures, 34 pages

Magnetic skyrmions are promising for next-generation information storage and processing owing to their potential advantages in data storage density, robustness, and energy efficiency. The magnetic multilayers consisting of Pt, Co, and a third metal element $X$ provide an ideal platform to study the skyrmions due to their highly tunable magnetic properties. Here, we report the observation of room-temperature bubble-like N\'eel skyrmions in epitaxial Pt/Co/Cu multilayers in samples with multidomain states in zero field. The magneto-optic Kerr effect (MOKE) and superconducting quantum interference device (SQUID) magnetometry are applied to investigate the shapes of the hysteresis loops, the magnetic anisotropy, and the saturation magnetization. By tuning the Co thickness and the number of periods, we achieve perpendicular and in-plane magnetized states and multidomain states that are identified by a wasp-waisted hysteresis loop. Skyrmions are directly imaged by magnetic force microscopy (MFM) and Lorentz transmission electron microscopy (LTEM). The development of room-temperature skyrmions in Pt/Co/Cu multilayers may lead to advances in skyrmion-related research and applications., Comment: 11 pages, 6 Figures

Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials., Comment: 8 pages, 5 figures. arXiv admin note: substantial text overlap with arXiv:2105.12203

In this contribution experimental evidence of plasmonic edge modes and breathing acoustic modes in gold nanostars (AuNS) is reported. AuNS are synthesized in a surfactant-free, one-step wet-chemistry method. Optical extinction measurements of AuNS confirm the presence of localized surface plasmon resonances (LSPRs), while electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) shows the spatial distribution of LSPRs and reveals the presence of acoustic breathing modes. Plasmonic hot-spots generated at the pinnacle of the sharp spikes, due to the optically active edge dipolar mode, allow significant intensity enhancement of local fields, hot-electron injection, and thus useful for size detection of small protein molecules. The breathing modes observed away from the apices of the nanostars are identified as stimulated dark modes - they have an acoustic nature - and likely originate from the confinement of the surface plasmon by the geometrical boundaries of a nanostructure. The presence of both types of modes is verified by numerical simulations. Both these modes offer the possibility to design nanoplasmonic antenna based on AuNS, which can provide information both on mass and polarizability of biomolecules using a two-step molecular detection process., Comment: 19 pages, 9 figures

Electrical detection of topological magnetic textures such as skyrmions is currently limited to conducting materials. While magnetic insulators offer key advantages for skyrmion technologies with high speed and low loss, they have not yet been explored electrically. Here, we report a prominent topological Hall effect in Pt/Tm$_3$Fe$_5$O$_{12}$ bilayers, where the pristine Tm$_3$Fe$_5$O$_{12}$ epitaxial films down to 1.25 unit cell thickness allow for tuning of topological Hall stability over a broad range from 200 to 465 K through atomic-scale thickness control. Although Tm$_3$Fe$_5$O$_{12}$ is insulating, we demonstrate the detection of topological magnetic textures through a novel phenomenon: 'spin-Hall topological Hall effect' (SH-THE), where the interfacial spin-orbit torques allow spin-Hall-effect generated spins in Pt to experience the unique topology of the underlying skyrmions in Tm$_3$Fe$_5$O$_{12}$. This novel electrical detection phenomenon paves a new path for utilizing a large family of magnetic insulators in future skyrmion technologies.

Here we demonstrate a new monoclinic iron oxide phase ({\mu}-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) {\beta}-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding {\mu}-Fe$_{2}$O$_{3}$ are within ~1% of those of {\beta}-Ga$_{2}$O$_{3}$ and that its energy of formation is comparable to that of naturally abundant Fe$_{2}$O$_{3}$ polytypes. A superlattice of {\mu}-Fe$_{2}$O$_{3}$/{\beta}-Ga$_{2}$O$_{3}$ is grown by plasma assisted molecular beam epitaxy, with resulting high-resolution x-ray diffraction (XRD) measurements indicating that the {\mu}-Fe$_{2}$O$_{3}$ layers are lattice-matched to the substrate. The measured out-of-plane (b) lattice parameter of 3.12 $\pm$ 0.4 {\AA} is in agreement with the predicted lattice constants and atomic-resolution scanning transmission electron microscopy (STEM) images confirm complete registry of the {\mu}-Fe$_{2}$O$_{3}$ layers with {\beta}-Ga$_{2}$O$_{3}$. Finally, DFT modeling predicts that bulk {\mu}-Fe$_{2}$O$_{3}$ is antiferromagnetic, while the interface region between {\mu}-Fe$_{2}$O$_{3}$ and {\beta}-Ga$_{2}$O$_{3}$ leads to ferromagnetic coupling between interface Fe$^{3+}$ cations selectively occupying tetrahedral positions. Magnetic hysteresis persisting to room temperature is observed via SQUID measurements, consistent with the computationally predicted interface magnetism., Comment: 19 pages and 7 figures

Monolayer van der Waals (vdW) magnets provide an exciting opportunity for exploring two-dimensional (2D) magnetism for scientific and technological advances, but the intrinsic ferromagnetism has only been observed at low temperatures. Here, we report the observation of room temperature ferromagnetism in manganese selenide (MnSe$_x$) films grown by molecular beam epitaxy (MBE). Magnetic and structural characterization provides strong evidence that in the monolayer limit, the ferromagnetism originates from a vdW manganese diselenide (MnSe$_2$) monolayer, while for thicker films it could originate from a combination of vdW MnSe$_2$ and/or interfacial magnetism of $\alpha$-MnSe(111). Magnetization measurements of monolayer MnSe$_x$ films on GaSe and SnSe$_2$ epilayers show ferromagnetic ordering with large saturation magnetization of ~ 4 Bohr magnetons per Mn, which is consistent with density functional theory calculations predicting ferromagnetism in monolayer 1T-MnSe$_2$. Growing MnSe$_x$ films on GaSe up to high thickness (~ 40 nm) produces $\alpha$-MnSe(111), and an enhanced magnetic moment (~ 2x) compared to the monolayer MnSe$_x$ samples. Detailed structural characterization by scanning transmission electron microscopy (STEM), scanning tunneling microscopy (STM), and reflection high energy electron diffraction (RHEED) reveal an abrupt and clean interface between GaSe(0001) and $\alpha$-MnSe(111). In particular, the structure measured by STEM is consistent with the presence of a MnSe$_2$ monolayer at the interface. These results hold promise for potential applications in energy efficient information storage and processing.

We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism (i.e. anisotropic magnetoresistance) and spin Hall effect (i.e. spin Hall magnetoresistance) in the Pt layer. The observation of induced ferromagnetism in Pt via AMR is further supported by density functional theory calculations and various control measurements including insertion of a Cu spacer layer to suppress the induced ferromagnetism. In addition, anomalous Hall effect measurements show an out-of-plane magnetic hysteresis loop of the induced ferromagnetic phase with larger coercivity and larger remanence than the bulk CoFe2O4. By demonstrating MPE in Pt/CoFe2O4, these results establish the spinel ferrite family as a promising material for MPE and spin manipulation via proximity exchange fields., Comment: 16 pages, 6 figures

We report experimental and theoretical evidence for the formation of chiral bobbers - an interfacial topological spin texture - in FeGe films grown by molecular beam epitaxy (MBE). After establishing the presence of skyrmions in FeGe/Si(111) thin film samples through Lorentz transmission electron microscopy and topological Hall effect, we perform magnetization measurements that reveal an inverse relationship between film thickness and the slope of the susceptibility (d\c{hi}/dH). We present evidence for the evolution as a function of film thickness, L, from a skyrmion phase for L < LD/2 to a cone phase with chiral bobbers at the interface for L > LD/2, where LD ~ 70 nm is the FeGe pitch length. We show using micromagnetic simulations that chiral bobbers, earlier predicted to be metastable, are in fact the stable ground state in the presence of an additional interfacial Rashba Dzyaloshinskii-Moriya interaction (DMI)., Comment: accepted to Phys. Rev. Materials

Skyrmions are localized magnetic spin textures whose stability has been shown theoretically to depend on material parameters including bulk Dresselhaus spin orbit coupling (SOC), interfacial Rashba SOC, and magnetic anisotropy. Here, we establish the growth of a new class of artificial skyrmion materials, namely B20 superlattices, where these parameters could be systematically tuned. Specifically, we report the successful growth of B20 superlattices comprised of single crystal thin films of FeGe, MnGe, and CrGe on Si(111) substrates. Thin films and superlattices are grown by molecular beam epitaxy and are characterized through a combination of reflection high energy electron diffraction, x-ray diffraction, and cross-sectional scanning transmission electron microscopy (STEM). X-ray energy dispersive spectroscopy (XEDS) distinguishes layers by elemental mapping and indicates good interface quality with relatively low levels of intermixing in the [CrGe/MnGe/FeGe] superlattice. This demonstration of epitaxial, single-crystalline B20 superlattices is a significant advance toward tunable skyrmion systems for fundamental scientific studies and applications in magnetic storage and logic., Comment: 16 pages, 7 figures

Transverse thermoelectric devices produce electric fields perpendicular to an incident heat flux. Classically, this process is driven by the Nernst effect in bulk solids, wherein a magnetic field generates a Lorentz force on thermally excited electrons. The spin Seebeck effect (SSE) also produces magnetization-dependent transverse electric fields. SSE is traditionally observed in thin metallic films deposited on electrically insulating ferromagnets, but the films' high resistance limits thermoelectric conversion efficiency. Combining Nernst and SSE in bulk materials would enable devices with simultaneously large transverse thermopower and low electrical resistance. Here we demonstrate experimentally this is possible in composites of conducting ferromagnets (Ni or MnBi) containing metallic nanoparticles with strong spin-orbit interactions (Pt or Au). These materials display positive shifts in transverse thermopower attributable to inverse spin Hall electric fields in the nanoparticles. This more than doubles the power output of the Ni-Pt materials, establishing proof-of-principle that SSE persists in bulk nanocomposites.

Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light emitting diodes (LEDs), lasers, solar cells and sensors. However, expensive single crystalline substrates are commonly used as substrates for nanowire heterostructures as well as for epitaxial devices, which limits the manufacturability of nanowire devices. Here, we demonstrate nanowire LEDs directly grown and electrically integrated on metal. Optical and structural measurements reveal high-quality, vertically-aligned GaN nanowires on molybdenum and titanium films. Transmission electron microscopy confirms the composition variation in the polarization-graded AlGaN nanowire LEDs. Blue to green electroluminescence is observed from InGaN quantum well active regions, while GaN active regions exhibit ultraviolet emission. These results demonstrate a pathway for large-scale fabrication of solid state lighting and optoelectronics on metal foils or sheets., Comment: 18 pages, 5 figures

We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7 %Al/nm to 4.95 %Al/nm corresponding to negative bound polarization charge densities of 2.2x10^18 cm^-3 to 1.6x10^19 cm^-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30 %Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6x10^19 cm^-3 at a gradient of 4.95 %Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation., Comment: 12 pages of text, 3 tables, and 3 figures

The development of molecular nanostructures plays a major role in emerging organic electronic applications, as it leads to improved performance and is compatible with our increasing need for miniaturisation. In particular, nanowires have been obtained from solution or vapour phase and have displayed high conductivity, or large interfacial areas in solar cells. In all cases however, the crystal structure remains as in films or bulk, and the exploitation of wires requires extensive post-growth manipulation as their orientations are random. Here we report copper phthalocyanine (CuPc) nanowires with diameters of 10-100 nm, high directionality and unprecedented aspect ratios. We demonstrate that they adopt a new crystal phase, designated eta-CuPc, where the molecules stack along the long axis. The resulting high electronic overlap along the centimetre length stacks achieved in our wires mediates antiferromagnetic couplings and broadens the optical absorption spectrum. The ability to fabricate ultralong, flexible metal phthalocyanine nanowires opens new possibilities for applications of these simple molecules.