1. Nanosphere natural lithography surface texturing as anti-reflective layer on SiC photodiodes.
- Author
-
Zhou Q, McIntosh DC, Chen Y, Sun W, Li Z, and Campbell JC
- Subjects
- Equipment Design, Equipment Failure Analysis, Light, Photography methods, Scattering, Radiation, Carbon Compounds, Inorganic chemistry, Nanospheres chemistry, Nanotechnology instrumentation, Photometry instrumentation, Semiconductors, Silicon Compounds chemistry
- Abstract
Natural lithography with 100-nm-diameter SiO(2) spheres followed by inductively coupled plasma etching was used to texture the surface of 4H-SiC for a wide-spectrum large-acceptance-angle anti-reflective layer. The surface showed low normal-incidence reflectance of < 5% over a wide spectrum from 250 nm to 550 nm. Photodiodes fabricated from the surface-textured SiC showed broader spectral and angular responsivity than SiC photodiodes with SiO(2) antireflective coating. The textured SiC photodiodes showed peak responsivity of 116 mA/W, large angle of acceptance angle (< 2% decrease in responsivity at 50° incident angle) and low dark current at 10V., (© 2011 Optical Society of America)
- Published
- 2011
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