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The large-area 10-kV 4H-SiC DMOSFET designs are fabricated and are compared with respect to their design, die area, breakdown yield and ON-state yield. The lower periphery per unit area linear finger design is superior to the square cell design for large-area SiC DMOSFETs because of the channel-orientation-dependent mobility and the lower yields associated with the geometries of the square cell design.

The design and optimization of a large-area 19-kV DMOSFET are described, which have maintained a stable low-leakage normally off subthreshold characteristic when operated at

A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Si power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25 [degrees]C are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100 [degrees]C), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected. Index Terms--DiMOSFET, silicon carbide (SIC).

Dynamic electrothermal circuit simulator models are developed for silicon carbide power diodes. The models accurately describe the temperature dependence of on-state characteristics and reverse-recovery switching waveforms. The models are verified for the temperature dependence of the on-state characteristics, and the di/dt, dv/dt, and temperature dependence of the reverse-recovery characteristics. The model results are presented for 1500 V SiC Merged PiN Schottky (MPS) diodes, 600 V Schottky diodes, and 5000 V SiC PiN diodes. The devices studied have current ratings from 0.25 A to 5 A and have different lifetimes resulting in different switching energy versus on-state voltage trade-offs. The devices are characterized using a previously reported test system specifically designed to emulate a wide range of application conditions by independently controlling the applied diode voltage, forward diode current, di/dt, and dv/dt at turn-off. A behavioral model of the test system is implemented to simulate and validate the models. The models are validated for a wide range of application conditions for which the diode could be used. Index Terms--Circuit simulation, diode model, merged PiN Schottky, PiN, power diode, reverse recovery, Schottky, SiC.