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InGaAs quantum wells embedded in GaAs nanowires can serve as compact near-infrared emitters for direct integration onto Si complementary metal oxide semiconductor technology. While the core-shell geometry in principle allows for a greater tuning of composition and emission, especially farther into the infrared, the practical limits of elastic strain accommodation in quantum wells on multifaceted nanowires have not been established. One barrier to progress is the difficulty of directly comparing the emission characteristics and the precise microstructure of a single nanowire. Here we report an approach to correlating quantum well morphology, strain, defects, and emission to understand the limits of elastic strain accommodation in nanowire quantum wells specific to their geometry. We realize full 3D Bragg coherent diffraction imaging (BCDI) of intact quantum wells on vertically oriented epitaxial nanowires, which enables direct correlation with single-nanowire photoluminescence. By growing In

Axially heterostructured nanowires are a promising platform for next generation electronic and optoelectronic devices. Reports based on theoretical modeling have predicted more complex strain distributions and increased critical layer thicknesses than in thin films, due to lateral strain relaxation at the surface, but the understanding of the growth and strain distributions in these complex structures is hampered by the lack of high-resolution characterization techniques. Here, we demonstrate strain mapping of an axially segmented GaInP-InP 190 nm diameter nanowire heterostructure using scanning X-ray diffraction. We systematically investigate the strain distribution and lattice tilt in three different segment lengths from 45 to 170 nm, obtaining strain maps with about 10−4 relative strain sensitivity. The experiments were performed using the 90 nm diameter nanofocus at the NanoMAX beamline, taking advantage of the high coherent flux from the first diffraction limited storage ring MAX IV. The experimental results are in good agreement with a full simulation of the experiment based on a three-dimensional (3D) finite element model. The largest segments show a complex profile, where the lateral strain relaxation at the surface leads to a dome-shaped strain distribution from the mismatched interfaces, and a change from tensile to compressive strain within a single segment. The lattice tilt maps show a cross-shaped profile with excellent qualitative and quantitative agreement with the simulations. In contrast, the shortest measured InP segment is almost fully adapted to the surrounding GaInP segments.

Selective-area epitaxy provides a path toward high crystal quality, scalable, complex nanowire networks. These high-quality networks could be used in topological quantum computing as well as in ultrafast photodetection schemes. Control of the carrier density and mean free path in these devices is key for all of these applications. Factors that affect the mean free path include scattering by surfaces, donors, defects, and impurities. Here, we demonstrate how to reduce donor scattering in InGaAs nanowire networks by adopting a remote-doping strategy. Low-temperature magnetotransport measurements indicate weak anti-localization—a signature of strong spin–orbit interaction—across a nanowire Y-junction. This work serves as a blueprint for achieving remotely doped, ultraclean, and scalable nanowire networks for quantum technologies.

A new approach for epitaxial stabilisation of ferroelectric orthorhombic (o-) ZrO2 films with negative piezoelectric coefficient in ∼ 8nm thick films grown by ion-beam sputtering is demonstrated. Films on (011)-Nb:SrTiO3 gave the oriented o-phase, as confirmed by transmission electron microscopy and electron backscatter diffraction mapping, grazing incidence x-ray diffraction and Raman spectroscopy. Scanning probe microscopy techniques and macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of ∼14.3 µC/cm2, remnant polarization of ∼9.3 µC/cm2 and coercive field ∼1.2 MV/cm. In contrast to the o-films grown on (011)-Nb:SrTiO3, films grown on (001)-Nb:SrTiO3 showed mixed monoclinic (m-) and o-phases causing an inferior remnant polarization of ∼4.8 µC/cm2, over 50% lower than the one observed for the film grown on (011)-Nb:SrTiO3. Density functional theory (DFT) calculations of the SrTiO3/ZrO2 interfaces support the experimental findings of a stable polar o-phase for growth on (011) Nb:SrTiO3, and they also explain the negative piezoelectric coefficient., This work was supported by: (i) the Portuguese Foundation for Science and Technology (FCT) in the framework of the Strategic Funding Contract UIDB/04650/2020 and (ii) Project NECL - NORTE-01-0145-FEDER-022096 and Project UID/NAN/50024/2019. This work has received funding from the European Union's Horizon 2020 research and innovation programme under grant agreement No 958174 (M-ERA-NET3/0003/2021 - NanOx4EStor). This work was also developed within the scope of the project CICECO-Aveiro Institute of Materials, UIDB/50011/2020 & UIDP/50011/2020, financed by national funds through the Portuguese Foundation for Science and Technology/MCTES. It is also funded by national funds (OE), through FCT – Fundação para a Ciência e a Tecnologia, I.P., in the scope of the framework contract foreseen in the numbers 4, 5 and 6 of the article 23, of the Decree-Law 57/2016, of August 29, changed by Law 57/2017, of July 19., The calculations were carried out at the OBLIVION Supercomputer (based at the High Performance Computing Center - University of Évora) funded by the ENGAGE SKA Research Infrastructure (reference POCI-01-0145-FEDER-022217 - COMPETE 2020 and the Foundation for Science and Technology, Portugal) and by the BigData@UE project (reference ALT20-03-0246-FEDER-000033 - FEDER and the Alentejo 2020 Regional Operational Program). Oblivion resources were accessed through the advanced computing projects CPCA/A2/5649/2020 and CPCA/A2/4628/2020, funded by FCT I.P. The authors gratefully acknowledge the HPC RIVR consortium (www.hpc-rivr.si) and EuroHPC JU (eurohpc-ju.europa.eu) for funding this research by providing computing resources of the HPC system Vega at the Institute of Information Science (www.izum.si)

IEEE journal of photovoltaics 9(6), 1790-1799 (2019). doi:10.1109/JPHOTOV.2019.2942487, Strain within grains and at grain boundaries (GBs) in polycrystalline thin-film absorber layers limits the overall performance because of higher defect concentrations and band fluctuations. However, the nanoscale strain distribution in operational devices is not easily accessible using standard methods. X-ray nanodiffraction offers the unique possibility to evaluate the strain or lattice spacing at nanoscale resolution. Furthermore, the combination of nanodiffraction with additional techniques in the framework of multimodal scanning X-ray microscopy enables the direct correlation of the strain with material and device parameters such as the elemental distribution or local performance. This approach is applied for the investigation of the strain distribution in CdTe grains in fully operational photovoltaic solar cells. It is found that the lattice spacing in the (111) direction remains fairly constant in the grain cores but systematically decreases at the GBs. The lower strain at GBs is accompanied by an increase of the total tilt. These observations are both compatible with the inhomogeneous incorporation of smaller atoms into the lattice, and local stress induced by neighboring grains., Published by IEEE, New York, NY

Direct correlations between dopant incorporation, distribution, and their electrical activity in semiconductor nanowires (NW) are difficult to access and require a combination of advanced nanometrology methods. Here, we present a comprehensive investigation of the chemical and electrically active dopant concentrations in n-type Si-doped InAs NW grown by catalyst-free molecular beam epitaxy using various complementary techniques. N-type carrier concentrations are determined by Seebeck effect measurements and four-terminal NW field-effect transistor characterization and compared with the Si dopant distribution analyzed by local electrode atom probe tomography. With increased dopant supply, a distinct saturation of the free carrier concentration is observed in the mid-1018 cm-3 range. This behavior coincides with the incorporated Si dopant concentrations in the bulk part of the NW, suggesting the absence of compensation effects. Importantly, excess Si dopants with very high concentrations (>1020 cm-3) segregate at the NW sidewall surfaces, which confirms recent first-principles calculations and results in modifications of the surface electronic properties that are sensitively probed by field-effect measurements. These findings are expected to be relevant also for doping studies of other noncatalytic III-V NW systems.

III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integrated in Si-based electronics, becomes possible. Furthermore, polytypism was observed e.g. in GaAs nanowires such that different crystal phases coexist in the same nanowire. As different crystal phases have different electronic properties, this feature can be exploited to form crystal-phase heterostructures with atomically flat interfaces and only very small elastic deformation. We will discuss the specifics of electronic-structure simulations in such nanowires and present recent example studies.

While the properties of wurtzite GaAs have been extensively studied during the past decade, little is known about the influence of the crystal polytype on ternary (In,Ga)As quantum well structures. We address this question with a unique combination of correlated, spatially-resolved measurement techniques on core-shell nanowires that contain extended segments of both the zincblende and wurtzite polytypes. Cathodoluminescence hyperspectral imaging reveals a blueshift of the quantum well emission energy by $75\pm15$ meV in the wurtzite polytype segment. Nanoprobe x-ray diffraction and atom probe tomography enable $\mathbf{k}\cdot\mathbf{p}$ calculations for the specific sample geometry to reveal two comparable contributions to this shift. First, there is a 30% drop in In mole fraction going from the zincblende to the wurtzite segment. Second, the quantum well is under compressive strain, which has a much stronger impact on the hole ground state in the wurtzite than in the zincblende segment. Our results highlight the role of the crystal structure in tuning the emission of (In,Ga)As quantum wells and pave the way to exploit the possibilities of three-dimensional bandgap engineering in core-shell nanowire heterostructures. At the same time, we have demonstrated an advanced characterization toolkit for the investigation of semiconductor nanostructures., This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters (2019), copyright (C) American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01241, the supporting information is available (free of charge) under the same link

A multimodal in situ nanofocused X-ray microscopy approach is demonstrated and applied to a working polycrystalline thin film solar cell that revealed chemical, structural and electronic heterogeneity from a single measurement., The factors limiting the performance of alternative polycrystalline solar cells as compared with their single-crystal counterparts are not fully understood, but are thought to originate from structural and chemical heterogeneities at various length scales. Here, it is demonstrated that multimodal focused nanobeam X-ray microscopy can be used to reveal multiple aspects of the problem in a single measurement by mapping chemical makeup, lattice structure and charge collection efficiency simultaneously in a working solar cell. This approach was applied to micrometre-sized individual grains in a Cu(In,Ga)Se2 polycrystalline film packaged in a working device. It was found that, near grain boundaries, collection efficiency is increased, and that in these regions the lattice parameter of the material is expanded. These observations are discussed in terms of possible physical models and future experiments.

Semiconductor nanowire (NW) lasers are attractive as integrated on-chip coherent light sources with strong potential for applications in optical communication and sensing. Realizing lasers from individual bulk-type NWs with emission tunable from the near-infrared to the telecommunications spectral region is, however, challenging and requires low-dimensional active gain regions with an adjustable band gap and quantum confinement. Here, we demonstrate lasing from GaAs-(InGaAs/AlGaAs) core-shell NWs with multiple InGaAs quantum wells (QW) and lasing wavelengths tunable from ∼0.8 to ∼1.1 μm. Our investigation emphasizes particularly the critical interplay between QW design, growth kinetics, and the control of InGaAs composition in the active region needed for effective tuning of the lasing wavelength. A low shell growth temperature and GaAs interlayers at the QW/barrier interfaces enable In molar fractions up to ∼25% without plastic strain relaxation or alloy intermixing in the QWs. Correlated scanning transmission electron microscopy, atom probe tomography, and confocal PL spectroscopy analyses illustrate the high sensitivity of the optically pumped lasing characteristics on microscopic properties, providing useful guidelines for other III-V-based NW laser systems.

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III–V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing., Authors from EPFL and U. Basel acknowledge funding through the NCCR QSIT. Authors from EPFL further thank funding from SNF (project no. IZLRZ2-163861) and H2020 via the ITN project INDEED. Work at U. Basel was partially supported by the Swiss NSF, and the Swiss Nanoscience Institute SNI. S.M.S. acknowledges funding from “Programa Internacional de Becas “la Caixa″-Severo Ochoa”. J.A. and S.M.S. acknowledge funding from Generalitat de Catalunya 2017 SGR 327 and the Spanish MINECO coordinated project ValPEC (ENE2017-85087-C3). ICN2 acknowledges support from the Severo Ochoa Programme (MINECO, grant no. SEV2013-0295) and is funded by the CERCA Programme/Generalitat de Catalunya. This work has received funding from the European Union’s Horizon 2020 Research and Innovation Programme under grant agreement no. 654360 NFFA-Europe. V.G.D. thanks the Ministry of Education and Science of the Russian Federation for financial support under grant no. 14-613-21-0055 (project ID RFMEFI61316 × 0055). L.J.L. acknowledges support of NSF DMR-1611341. M.O.H. acknowledges support of the NSF GRFP. NUCAPT received support from the MRSEC program (NSF DMR-1720139) at the Materials Research Center, the SHyNE Resource (NSF ECCS-1542205), and the Initiative for Sustainability and Energy (ISEN) at Northwestern University.

International audience; III-As nanowires are candidates for near infrared light emitters and detectors that can be directly integrated onto silicon. However, nanoscale to microscale variations in structure, composition, and strain within a given nanowire, as well as variations between nanowires, pose challenges to correlating microstructure with device performance. In this work, we utilize coherent nano-focused x-rays to characterize stacking defects and strain in a single InGaAs nanowire supported on Si. By reconstructing diffraction patterns from the 2110 Bragg peak, we show that the lattice orientation varies along the length of the wire, while the strain field along the cross-section is largely unaffected, leaving the band structure unperturbed. Diffraction patterns from the 0110 Bragg peak are reproducibly reconstructed to create three-dimensional images of stacking defects and associated lattice strains, revealing sharp planar boundaries between different crystal phases of wurtzite (WZ) structure that contribute to charge carrier scattering. Phase retrieval is made possible by developing multi-angle Bragg projection ptychography (maBPP) to accommodate coherent nanodiffraction patterns measured at arbitrary overlapping positions at multiple angles about a Bragg peak, eliminating the need for scan registration at different angles. The penetrating nature of x-ray radiation, together with the relaxed constraints of maBPP, will enable in operado imaging of nanowire devices.

Dopant activation of Si implanted In0.53Ga0.47As (InGaAs) following laser spike annealing (LSA) was studied at temperatures up to 1000oC with dwells from 250 μs to 2000 μs. Temperatures of the InGaAs under LSA were directly measured using Pt thermistors and calibrated to the known decomposition temperature of a simple polymer. Using spatially resolved probes with single laser stripe scans, the temperature dependent activation and damage behaviors were determined. Compared to furnace annealing, LSA was found to increase active carrier concentration and extend the temperature limit before damage. CAPRES 4-point measurements were used to determine carrier activation while Raman analysis of the LO phonon peak and LO phonon-plasmon coupling mode (LOPCM) peak was used to monitor crystal quality and carrier concentrations. For a 1014 cm-2 Si implant at 20keV, a minimum sheet resistance of 135 Ω/sq was obtained for a 1000 μs dwell at 845oC, with a peak carrier concentration near 8x1018 cm-3.

A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.