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191 results on '"Mehuys, D."'

1. High power singlemode edge-emitting master oscillator power amplifier

Author

O'Brien, S, Parke, R, Welch, D. F, Mehuys, D, and Scifres, D

Subjects
Lasers And Masers
Abstract

An edge-emitting monolithically integrated master oscillator power amplifier (M-MOPA) has been fabricated by integrating a distributed Bragg reflector laser with a 500 microns long single mode amplifier. The M-MOPA contains a strained InGaAs quantum well in the active region and operates at about 981.5 nm in an edge-emitting fashion with maximum powers in excess of 175 mW. Single longitudinal and transverse mode operation is maintained to powers in excess of 110 mW CW.

Published
1992

2. High power singlemode GaInAs lasers with distributed Bragg reflectors

Author

O'Brien, S, Parke, R, Welch, D. F, Mehuys, D, and Scifres, D

Subjects
Lasers And Masers
Abstract

High power singlemode strained GaInAs lasers have been fabricated which use buried second order gratings as distributed Bragg reflectors. The lasers operate in an edge emitting fashion with CW powers in excess of 110 mW with single longitudinal and transverse mode operation at 971.9 nm up to 42 mW.

Published
1992

3. 11.5 W pulsed operation of antiguided laser diode array

Author

Major, J. S., Jr, Mehuys, D, and Welch, D. F

Subjects
Lasers And Masers
Abstract

A 40-element array of antiguided laser diodes was constructed, which produced a peak power of 11.5 W in an in-phase radiation pattern. The laser has a threshold current of 0.5 A and a differential efficiency of 50 percent. It achieves the output power of 11.5 W at an input current of 18 A. The FWHM of the central lobe of the device at the output power of 11.5 W is 1.0 deg.

Published
1992

4. High-efficiency, high-output-power antiguide laser diode arrays

Author

Mehuys, D, Major, J. S., Jr, Welch, D, and Scifres, D. R

Subjects
Lasers And Masers
Abstract

Antiguide laser arrays have been fabricated and operated up to peak pulsed powers of 7.7 W in a beam with a full-width at half-maximum in the main lobe of 0.7 deg. Up to 0.7 W of continuous wave power is emitted into a radiation pattern 2.5 times the diffraction limit. By varying the temperature of the array to vary the operating wavelength of the device, the threshold gain condition of the array modes is altered, allowing thermal tuning of the far field of the device.

Published
1992

5. High power GaInAs lasers with distributed Bragg reflectors

Author

O'Brien, S, Parke, R, Welch, D. F, Mehuys, D, and Scifres, D

Subjects
Lasers And Masers
Abstract

Single-mode strained-layer lasers have been fabricated which use buried second-order gratings for distributed Bragg reflectors. The lasers contain a strained GaInAs quantum well in the active region and operate in an edge emitting fashion with CW powers in excess of 110 mW. Single longitudinal and transverse mode operation is maintained at about 971.9 nm up to 42 mW. Total power conversion efficiencies as high as 28 percent have been observed. The longitudinal and transverse mode behavior is stable under 90 percent amplitude modulation with 50 percent duty cycle pulses at 10 kHz and 10 MHz. Preliminary life-test data at 40 C also indicate room temperature lifetimes in excess of 45,000 hours.

Published
1992

7. Broadband Tuning (170nm) of InGaAs Quantum Well Lasers

Author

Eng, L. E., Mehuys, D. G., Mittelstein, M., Yariv, A., Eng, L. E., Mehuys, D. G., Mittelstein, M., and Yariv, A.

Abstract

The wavelength tuning properties of strained InGaAs quantum well lasers using an external grating for feedback is reported. Tunable laser oscillation has been observed over a range of 170 nm, between 840 and 1010 nm, under pulsed current excitation. The optimal conditions for broadband tunability for the InGaAs lasers are different from GaAs lasers, which is attributed to a difference in spectral gain curves. Together with an optimised GaAs quantum well laser the entire region between 740 and 1010 nm is spanned.

Published
1990

8. Ultrabroadband tunable external-cavity quantum well lasers

Author

Botez, Dan, Figueroa, Luis, Mehuys, D., Eng, L., Mittelstein, M., Chen, T. R., Yariv, A., Botez, Dan, Figueroa, Luis, Mehuys, D., Eng, L., Mittelstein, M., Chen, T. R., and Yariv, A.

Abstract

The spectral tunability of properly designed quantum well lasers is demonstrated to equal the range of dye lasers. Theoretical and measured gain spectra are presented to support this statement, and stepwise wavelength tuning over a 125 nm span in GaAs/AlGaAs lasers and 175 nm in InGaAs/AlGaAs lasers are shown.

Published
1990

46. Nonlinear Optics for Optical Frequency Synthesis and an Optical Divide by 3.

Author

Mürtz, M., Pfister, O., Marquardt, J. H., Stephens, M., Wells, J. S., Waltman, S., Hollberg, L., Robinson, H. G., Fox, R. W., Mehuys, D., Brown, E. R., and McIntosh, K. A.

Subjects
YAG lasers, SECOND harmonic generation, SCHOTTKY barrier diodes, NONLINEAR optics, OPTICAL frequency conversion
Published
1996

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