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A rectangular graphyne sheet is composed of units similar to phenyl rings that are linked by acetylenic chains, as in hexagonal $\gamma$-graphyne. This system is organized over a rectangular lattice similar to that of the recently synthesized biphenylene network. We investigate the stability of this sheet from different perspectives and study its electronic structure. Rectangular graphyne is a semiconducting system in its pristine form and features a pair of highly localized states. These characteristics are correlated with the structural anisotropy of the system, since its frontier states behave like quasi--1D states embedded in the 2D lattice. We further consider modified systems in which longer acetylenic links are introduced. We discuss how a strategic choice of the position of these longer bridges can lead to specific changes of the electronic structure of the rectangular graphyne sheet.

We conduct a theoretical examination of the electronic and magnetic characteristics of end-modified 7-atom wide armchair graphene nanoribbons (AGNRs). Our investigation is performed within the framework of a single-band Hubbard model, beyond a mean-field approximation. First, we carry out a comprehensive comparison of various approaches for accommodating di-hydrogenation configurations at the AGNR ends. We demonstrate that the application of an on-site potential to the modified carbon atom, coupled with the addition of an electron, replicates phenomena such as the experimentally observed reduction in the bulk-states (BS) gap. These results for the density of states (DOS) and electronic densities align closely with those obtained through a method explicitly designed to account for the orbital properties of hydrogen atoms. Furthermore, our study enables a clear differentiation between mean-field (MF) magnetic moments, which are spatially confined to the same sites as the topological end-states (ES), and correlation-induced magnetic moments, which exhibit localization along all edges of the AGNRs. Notably, we find the robustness of these correlation-induced magnetic moments relative to end modifications, within the scope of the method we employ.

Finite size armchair graphene nanoribbons (GNR) of different families are theoretically studied using the Hubbard model in both mean-field and GW approximations, including spin correlation effects. It is shown that correlation primarily affect the properties of topological end states of the nanoribbons. A representative structure of each of the three GNR families is considered but the 7-atom width nanoribbon is studied in detail and compared to experimental results, showing a clear improvement when correlations are included. Using on numerically computed local density of states, spin-polarized measurements in scanning tunneling microscopy are also suggested to help distinguish and highlight correlation effects.

The effective independent-particle (mean-field) approximation of the Hubbard Hamiltonian is described in a many-body basis to develop a formal comparison with the exact diagonalization of the full Hubbard model, using small atomic chain as test systems. This allows for the development of an intuitive understanding of the shortcomings of the mean-field approximation and of how critical correlation effects are missed in this popular approach. The description in the many-body basis highlights a potential ambiguity related to the definition of the density of states. Specifically, satellite peaks are shown to emerge in the mean-field approximation, in departure from the common belief that they characterize correlation effects. The scheme emphasizes the importance of correlation and how different many-body corrections can improve the mean-field description. The pedagogical treatment is expected to make it possible for researchers to acquire an improved understanding of many-body effects as found in various areas related to electronic properties of molecules and solids, which is highly relevant to current efforts in quantum information and quantum computing.

The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials due to the absence of synthesis routes. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, sufficient yield, narrow size distribution, and straight-forward device integrability. The wide applicability of this technique is demonstrated by fabricating MoS2, WS2, WSe2, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistances. By relying on self-assembled and self-aligned organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon's edges. Electrical characterization shows record mobilities and very high ON currents for various TMDCs despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way towards the development of nanoribbon-based plasmonic sensing and opto-electronic devices.

The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

Density functional theory based calculations and experimental analysis on a limited number of real samples are performed to study how the presence of silver intercalated in the van der Waals gap of few-layer MoS$_2$ affects the low-frequency Raman active modes of this material. Silver is found to predominantly affect the breathing-like and shear-like vibrational modes of MoS$_2$. These modes correspond to quasi-rigid movements of each individual layer with a restoring force (and, in turn, frequency) that is determined by modulations in the weak interlayer interactions. Noticeable red-shifts with increasing Ag concentration are found for all low-frequency modes. This finding indicates the potential for low-frequency vibrations as useful gauges for practical determination of silver concentration using low-frequency Raman spectroscopy. This work also describes a semi-classical linear chain model that allows to extrapolate results to a large number of layers. Further, first-principles calculations show how Raman spectroscopy can be used to characterize the quality of the two-dimensional interface between MoS$_2$ and a silver substrate.

Many computational models have been developed to predict the rates of atomic displacements in two-dimensional (2D) materials under electron beam irradiation. However, these models often drastically underestimate the displacement rates in 2D insulators, in which beam-induced electronic excitations can reduce the binding energies of the irradiated atoms. This bond softening leads to a qualitative disagreement between theory and experiment, in that substantial sputtering is experimentally observed at beam energies deemed far to small to drive atomic dislocation by many current models. To address these theoretical shortcomings, this paper develops a first-principles method to calculate the probability of beam-induced electronic excitations by coupling quantum electrodynamics (QED) scattering amplitudes to density functional theory (DFT) single-particle orbitals. The presented theory then explicitly considers the effect of these electronic excitations on the sputtering cross section. Applying this method to 2D hexagonal BN and MoS$_2$ significantly increases their calculated sputtering cross sections and correctly yields appreciable sputtering rates at beam energies previously predicted to leave the crystals intact. The proposed QED-DFT approach can be easily extended to describe a rich variety of beam-driven phenomena in any crystalline material., Comment: 27 page, 6 figures (supplementary material has 10 pages, 5 figures)

This study examines how the GW approximation, one of the techniques covered by Green's functions and on many-body approximations (GFMBA), fares compared to the treatment of the Hubbard model solved using an exact diagonalization (ED) approach. We show that, for small linear chains, the GW approximation corrects the usual mean-field (MF) approach by reducing the total energy as well as the magnetization from the MF approximation. The energy gap shows also a better agreement with ED, especially in even-number of atoms systems where no plateau is observed below the predicted phase transition as in MF approximation. In terms of density of states, the GW approximation induces quasi-particles and side satellites peaks via a splitting process of MF peaks. At the same time, GW slightly changes the localization (e.g., edges or center) of the states. We also extend to GW approximation the L\"owdin's symmetry dilemma and show that GW predicts a paramagnetic-antiferromagnetic phase transition at a higher Hubbard parameter than MF.

The importance of phonons in the strong correlation phenomena observed in twisted bilayer graphene (TBG) at the so-called magic-angle is under debate. Here we apply gate-dependent micro-Raman spectroscopy to monitor the G band linewidth in TBG devices of twist angles $\theta=0^{\circ}$, $\sim 1.1^{\circ}$ (magic-angle) and $\sim 7^{\circ}$ (large angle). The results show a broad and p/n-asymmetric doping behavior at the magic-angle, in clear contrast to the behavior observed in twist angles above and below. Atomistic modeling reproduces the experimental observations, revealing how the unique electronic structure of magic-angle TBGs influences the electron-phonon coupling and, consequently, the G band linewidth. Our findings indicate a connection between electron-phonon coupling and experimental observations of strongly correlated phenomena in magic-angle TBG., Comment: 5 pages, 3 figures, submitted

Heterostructures made from topological and magnetic insulators promise to form excellent platforms for new electronic and spintronic functionalities mediated by interfacial effects. We report the results of a first-principles density functional theory study of the geometric, electronic structure, and magnetic properties of EuS(111)/Bi$_2$Se$_3$ interface, including van der Waals and relativistic spin-orbit effects. In contrast to previous theoretical studies, we find no appreciable magnetic anisotropy in such a heterostructure. We also do not see additional induced magnetization at the interface or the magnetic proximity effect on the topological states. This is due to the localized nature of Eu moments, and because of a partial charge transfer of $\sim$0.5 electron from Eu to Se. The formation of the surface dipole shifts the Dirac cone about 0.4~eV below the chemical potential, and the associated electrostatic screening moves the topological state from the first to the second quintuple layer of Bi$_2$Se$_3$., Comment: 10 pages, 6 figures

A computationally efficient Green's function approach is developed to evaluate the optical properties of nanostructures using a GW formalism applied on top of a tight-binding and mean-field Hubbard model. The use of the GW approximation includes key parts of the many-body physics that govern the optical response of nanostructures and molecules subjected to an external electromagnetic field. Such description of the electron-electron correlation yields data that are in significantly improved agreement with experiments performed on a subset of polycyclic aromatic hydrocarbons (PAHs) considered for illustrative purpose. More generally, the method is applicable to any structure whose electronic properties can be described in first approximation within a mean-field approach and is amenable for high-throughput studies aimed at screening materials with desired optical properties.

The vibrational properties of twisted bilayer graphene (tBLG) show complex features, due to the intricate energy landscape of its low-symmetry configurations. A machine learning-based approach is developed to provide a continuous model between the twist angle and the simulated Raman spectra of tBLGs. Extracting the structural information of the twist angle from Raman spectra corresponds to solving a complicated inverse problem. Once trained, the machine learning regressors (MLRs) quickly provide predictions without human bias and with an average of 98% of the data variance being explained by the model. The significant spectral features learned by MLRs are analyzed revealing the intensity profile near the calculated G-band to be the most important feature. The trained models are tested on noise-containing test data demonstrating their robustness. The transferability of the present models to experimental Raman spectra is discussed in the context of validation of the level of theory used for the construction of the analyzed database. This work serves as a proof of concept that machine-learning analysis is a potentially powerful tool for interpretation of Raman spectra of tBLG and other 2D materials., Comment: 11 pages, 5 figures

A low twist angle between the two stacked crystal networks in bilayer graphene enables self-organized lattice reconstruction with the formation of a periodic domain. This superlattice modulates the vibrational and electronic structures, imposing new rules for electron-phonon coupling and the eventual observation of strong correlation and superconductivity. Direct optical images of the crystal superlattice in reconstructed twisted bilayer graphene are reported here, generated by the inelastic scattering of light in a nano-Raman spectroscope. The observation of the crystallographic structure with visible light is made possible due to lattice dynamics localization, the images resembling spectral variations caused by the presence of strain solitons and topological points. The results are rationalized by a nearly-free-phonon model and electronic calculations that highlight the relevance of solitons and topological points, particularly pronounced for structures with small twist angles. We anticipate our discovery to play a role in understanding Jahn-Teller effects and electronic Cooper pairing, among many other important phonon-related effects, and it may be useful for characterizing devices in the most prominent platform for the field of twistronics., Comment: 9 pages, 8 figures

The phonon spectra of twisted bilayer graphene (tBLG) are analyzed for a series of 692 twisting angle values in the $[0,30{\degree}]$ range. The evolution of the phonon bandstructure as a function of twist angle is examined using a band unfolding scheme where the large number of phonon modes computed at the $\Gamma$ point for the large moir\'e tBLG supercells are unfolded onto the Brillouin Zone (BZ) of one of the two constituent layers. In addition to changes to the low-frequency breathing and shear modes, a series of well-defined side-bands around high-symmetry points of the extended BZ emerge due to the twist angle-dependent structural relaxation. The results are rationalized by introducing a nearly-free-phonon model that highlights the central role played by solitons in the description of the new phonon branches, which are particularly pronounced for structures with small twist angles, below a buckling angle $\theta_{\rm B}\sim {3.75}{\degree}$.

Organic-inorganic halide perovskites are intrinsically unstable when exposed to moisture and/or light. Additionally, the presence of lead in many perovskites raises toxicity concerns. Herein is reported a thin film of BaZrS3, a lead-free chalcogenide perovskite. Photoluminescence and X-ray diffraction measurements show that BaZrS3 is far more stable than methylammonium lead iodide (MAPbI3) in moist environments. Moisture- and light-induced degradations in BaZrS3 and MAPbI3 are compared by using simulations and calculations based on density functional theory. The simulations reveal drastically slower degradation in BaZrS3 due to two factors - weak interaction with water, and very low rates of ion migration. BaZrS3 photo-detecting devices with photo-responsivity of ~46.5 mA W-1 are also reported. The devices retain ~60% of their initial photo-response after 4 weeks in ambient conditions. Similar MAPbI3 devices degrade rapidly and show ~95% decrease in photo-responsivity in just 4 days. The findings establish the superior stability of BaZrS3 and strengthen the case for its use in optoelectronics. New possibilities for thermoelectric energy conversion using these materials are also demonstrated.

Graphene nanoribbons (GNRs) have attracted considerable interest as their atomically tunable structure makes them promising candidates for future electronic devices. However, obtaining detailed information about the length of GNRs has been challenging and typically relies on low-temperature scanning tunneling microscopy. Such methods are ill-suited for practical device application and characterization. In contrast, Raman spectroscopy is a sensitive method for the characterization of GNRs, in particular for investigating their width and structure. Here, we report on a length-dependent, Raman active low-energy vibrational mode that is present in atomically precise, bottom-up synthesized armchair graphene nanoribbons (AGNRs). Our Raman study demonstrates that this mode is present in all families of AGNRs and provides information on their length. Our spectroscopic findings are corroborated by scanning tunneling microscopy images and supported by first-principles calculations that allow us to attribute this mode to a longitudinal acoustic phonon. Finally, we show that this mode is a sensitive probe for the overall structural integrity of the ribbons and their interaction with technologically relevant substrates., Comment: Unedited author's version

We use continuum elasticity theory to revise scaling laws for radial breathing-like and shear-like vibration modes in quasi-2D nanostructures including finite-width nanoribbons and finite-size thin circular discs. Such modes can be observed spectroscopically in corresponding nanostructures of graphene and phosphorene and can be determined numerically by atomistic ab initio density functional theory and classical force-field calculation. The revised scaling laws differ from previously used expressions, some of which display an unphysical asymptotic behavior. Apart from model assumptions describing the effect of edge termination, the continuum scaling laws have no adjustable parameters and display correct asymptotic behavior. These scaling laws yield excellent agreement with experimental and numerical results for vibration frequencies in both isotropic and anisotropic structures as well as useful expressions for the frequency dependence on structure size and edge termination., Comment: accepted by Carbon (2019)

The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain for GNR processing and characterization. In this contribution, we use Raman spectroscopy to characterize different types of GNRs on their growth substrate and to track their quality upon substrate transfer. We present a Raman-optimized (RO) device substrate and an optimized mapping approach that allows for acquisition of high-resolution Raman spectra, achieving enhancement factors as high as 120 with respect to signals measured on standard SiO2/Si substrates. We show that this approach is well-suited to routinely monitor the geometry-dependent low-frequency modes of GNRs. In particular, we track the radial breathing-like mode (RBLM) and the shear-like mode (SLM) for 5-, 7- and 9-atom wide armchair GNRs (AGNRs) and compare their frequencies with first-principles calculations., Comment: *contributed equally 190722 - corrected typos

Recent progress in the on-surface synthesis of graphene nanoribbons (GNRs) has given access to atomically precise narrow GNRs with tunable electronic band gaps that makes them excellent candidates for room-temperature switching devices such as field-effect transistors (FET). However, in spite of their exceptional properties, significant challenges remain for GNR processing and characterization. This contribution addresses some of the most important challenges, including GNR fabrication scalability, substrate transfer, long-term stability under ambient conditions and ex situ characterization. We focus on 7- and 9-atom wide armchair graphene nanoribbons (i.e, 7-AGNR; and 9-AGNR) grown on 200 nm Au(111)/mica substrates using a high throughput system. Transfer of both, 7- and 9-AGNRs from their Au growth sub-strate onto various target substrates for additional characterization is accomplished utilizing a polymer-free method that avoids residual contamination. This results in a homogeneous GNR film morphology with very few tears and wrinkles, as examined by atomic force microscopy. Raman spectroscopy indicates no significant degradation of GNR quality upon substrate transfer, and reveals that GNRs have remarkable stability under ambient conditions over a 24-month period. The transferred GNRs are analyzed using multi-wavelength Raman spectroscopy, which provides detailed insight into the wavelength dependence of the width-specific vibrational modes. Finally, we characterize the optical properties of 7- and 9-AGNRs via ultra-violet-visible (UV-Vis) spectroscopy, Comment: 30 pages, 14 figures

Here we present a flexible strategy to realize robust nanomaterials exhibiting valence electronic structures whose fundamental physics is described by the SSH-Hamiltonian. These solid-state materials are realized using atomically precise graphene nanoribbons (GNR). We demonstrate the controlled periodic coupling of topological boundary states at junctions of armchair GNRs of different widths to create quasi-1D trivial and non-trivial electronic quantum phases. Their topological class is experimentally determined by drawing upon the bulk-boundary correspondence and measuring the presence (non-trivial) or absence (trivial) of localized end states by scanning tunneling spectroscopy (STS). The strategy we propose has the potential to tune the band width of the topological electronic bands close to the energy scale of proximity induced spin-orbit coupling or superconductivity, and may allow the realization of Kitaev like Hamiltonians and Majorana type end states.

Two-dimensional (2D) device structures have recently attracted considerable attention. Here, we show that most 2D device structures, regardless vertical or lateral, act as a lateral monolayer-bilayer-monolayer junction in their operation. In particular, a vertical structure cannot function as a vertical junction as having been widely believed in the literature. Moreover, due to a larger electrostatic screening, the bilayer region in the junction always has a smaller band gap than its monolayer counterpart. As a result, a potential well, aside from the usual potential barrier, will form universally in the bilayer region to affect the hole or electron quantum transport in the form of transmission or reflection. Taking black phosphorus as an example, we show that an oscillation in the transmission coefficient can be clearly resolved in a two-electrode prototypical device by non-equilibrium Green function combined with density functional theory calculations and the results can be qualitatively understood using a simple quantum well model. The presence of the quantum well is vital to 2D device design, including the effective tuning of quantum transmission by a vertical electric field.

Two-dimensional (2D) layered materials have been extensively studied owing to their fascinating and technologically relevant properties. Their functionalities can be often tailored by the interlayer stacking pattern. Low-frequency (LF) Raman spectroscopy provides a quick, non-destructive and inexpensive optical technique for stacking characterization, since the intensities of LF interlayer vibrational modes are sensitive to the details of the stacking. A simple and generalized interlayer bond polarizability model is proposed here to explain and predict how the LF Raman intensities depend on complex stacking sequences for any thickness in a broad array of 2D materials, including graphene, MoS2, MoSe2, NbSe2, Bi2Se3, GaSe, h-BN, etc. Additionally, a general strategy is proposed to unify the stacking nomenclature for these 2D materials. Our model reveals the fundamental mechanism of LF Raman response to the stacking, and provides general rules for stacking identification., Comment: 34 pages, 7 figures

The bilayered member of the Ruddesden-Popper family of ruthenates, Sr$_3$Ru$_2$O$_7$, has received an increasing attention due to its interesting properties and phases. By using first principle calculations we find that the ground-state is characterized by a ferromagnetic (FM) half-metallic state. This state strongly competes with an antiferromagnetic metallic phase, which indicates the possible presence of a particular state characterized by the existence of different magnetic domains. To drive the system towards a phase transition we studied the electronic and magnetic properties as a function of RuO$_6$ octahedra rotations and found that the magnetic phase does not couple with the rotation angle. Our results provide accurate electronic, structure, and magnetic ground-state properties of Sr$_3$Ru$_2$O$_7$ and stimulate the investigation of other type of octahedra rotations and distortions in the search of phase transitions.

We use first-principles theory to predict that the application of uniaxial compressive strain leads to a transition from an antiferromagnetic insulator to a ferromagnetic half-metal phase in LaMnO$_3$. We identify the Q2 Jahn-Teller mode as the primary mechanism that drives the transition, indicating that this mode can be used to tune the lattice, charge, and spin coupling. Applying $\simeq$ 6 GPa of uniaxial pressure along the [010] direction activates the transition to a half-metallic $\textit{pseudo-cubic}$ state. The half-metallicity opens the possibility of producing colossal magnetoresistance in the stoichiometric LaMnO$_3$ compound at significantly lower pressure compared to recently observed investigations using hydrostatic pressure.

We develop a procedure to determine the portion of exact Hartree-Fock exchange interaction contained in a hybrid density functional to treat the range of electronic correlation governing the physics of a system as a function of a thermodynamical parameter. This includes systems that depend on physical parameters accessible to experiment (i.e., temperature, pressure, composition, etc.) or those composed of two or more materials such as heterostructures and interfaces. This approach is applied to LaMnO$_3$ where for the first time we are able to simulate the high temperature insulator-to-metal transition (IMT) and observe a half-metallic orbital disorder ferromagnetic state using density functional theory. In particular, we show that the softening of the \textit{Q$_2$} Jahn-Teller mode plays a central role in driving the IMT. These findings are likely to motivate the investigation of heterostructures and bulk materials that contain a range of electronic correlation in similar material systems.