Search

Two-dimensional semiconductors, such as MoS2, have demonstrated great potential applications in post-Moore electronic and optoelectronic devices, and organic cations intercalation has been widely utilized to modulate their physical properties. However, the correlation between the conductivity, carrier mobility, carrier density, and structure of organic cations intercalated MoS2 is still unclear. In this Letter, we systematically investigated the structural and electrical transport properties of pristine MoS2 and MoS2 intercalated with various organic cations such as tetradecyltrimethyl-ammonium, tetraheptyl-ammonium, and cetyltrimethyl-ammonium. Semimetal bismuth (Bi) was used as electrodes to make Ohmic contact with MoS2, and four-probe measurements were employed to obtain the intrinsic conductivity of MoS2. The intercalated organic cations greatly expand interlayer spacing and strongly dope MoS2 up to an electron concentration of 6.1 × 1013 cm−2 depending on the size and intercalation amount of organic cations. The severe electron doping constrains the out-of-plane A 1 g vibration mode and screens the Coulomb scattering, such that the intercalated MoS2 has enhanced Hall mobility of >50 cm2 V−1 s−1 at room temperature and even >1700 cm2 V−1 s−1 at 5 K. The intercalated MoS2 responds much faster than pristine MoS2 when functioning as a phototransistor. Our work provides insight for understanding the electrical transport properties of MoS2 and designing more efficient electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

Two-dimensional semiconductors, such as MoS2, have demonstrated great potential applications in post-Moore electronic and optoelectronic devices, and organic cations intercalation has been widely utilized to modulate their physical properties. However, the correlation between the conductivity, carrier mobility, carrier density, and structure of organic cations intercalated MoS2 is still unclear. In this Letter, we systematically investigated the structural and electrical transport properties of pristine MoS2 and MoS2 intercalated with various organic cations such as tetradecyltrimethyl-ammonium, tetraheptyl-ammonium, and cetyltrimethyl-ammonium. Semimetal bismuth (Bi) was used as electrodes to make Ohmic contact with MoS2, and four-probe measurements were employed to obtain the intrinsic conductivity of MoS2. The intercalated organic cations greatly expand interlayer spacing and strongly dope MoS2 up to an electron concentration of 6.1 × 1013 cm−2 depending on the size and intercalation amount of organic cations. The severe electron doping constrains the out-of-plane A 1 g vibration mode and screens the Coulomb scattering, such that the intercalated MoS2 has enhanced Hall mobility of >50 cm2 V−1 s−1 at room temperature and even >1700 cm2 V−1 s−1 at 5 K. The intercalated MoS2 responds much faster than pristine MoS2 when functioning as a phototransistor. Our work provides insight for understanding the electrical transport properties of MoS2 and designing more efficient electronic and optoelectronic devices. [ABSTRACT FROM AUTHOR]

To electrically control magnetic properties of material is promising toward spintronic applications, where the investigation of carrier doping effects on antiferromagnetic (AFM) materials remains challenging due to their zero net magnetization. In this work, the authors find electron doping dependent variation of magnetic orders of a 2D AFM insulator NiPS3, where doping concentration is tuned by intercalating various organic cations into the van der Waals gaps of NiPS3 without introduction of defects and impurity phases. The doped NiPS3 shows an AFM‐ferrimagnetic (FIM) transition at a doping level of 0.2–0.5 electrons/cell and a FIM‐AFM transition at a doping level of ≥0.6 electrons/cell. The authors propose that the found phenomenon is due to competition between Stoner exchange dominated inter‐chain ferromagnetic order and super‐exchange dominated AFM order at different doping level. The studies provide a viable way to exploit correlation between electronic structures and magnetic properties of 2D magnetic materials for realization of magnetoelectric effect. [ABSTRACT FROM AUTHOR]