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22 results on '"Mi, Min Han"'

1. On-state performance enhancement of AlGaN/GaN Fin-HEMTs by using arcuate sidewalls.

Author

Chen, Yi-Lin, Zhu, Qing, Zhang, Meng, Mi, Min-Han, Zhu, Jie-Jie, Guo, Si-Yin, Zhou, Yu-Wei, Wang, Peng-Fei, Gong, Can, Zhao, Zi-Yue, and Ma, Xiao-Hua

Subjects
ELECTRIC capacity, VOLTAGE
Abstract

In this study, AlGaN/GaN Fin-HEMTs with different nanochannel geometric parameters were fabricated and comprehensively characterized. In the arcuate Fin-HEMTs, where the sidewalls arcuate from the source to the drain side, enhancements in the drain current density and transconductance were observed. By extracting and analyzing parameters obtained from small-signal measurements and conducting an analysis of gate capacitance, it was demonstrated that the enhancement can be attributed to the modulation of gate capacitance. This enhances the control capability of the gate over channel carriers, resulting in increased transconductance of the device. Due to the enhanced transconductance, the fT and fmax of the arcuate Fin-HEMTs are both enhanced. Notably, the arcuate Fin-HEMTs achieved a power-added efficiency of 71.4% at a frequency of 3.6 GHz and a drain voltage of 20 V. Meanwhile, the linearity of the arcuate Fin-HEMTs is improved compared with the conventional Fin-HEMTs. [ABSTRACT FROM AUTHOR]

Published
2024
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4. Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates

Author

Wang, Peng-Fei, primary, Mi, Min-Han, additional, Zhang, Meng, additional, Zhu, Qing, additional, Zhu, Jie-Jie, additional, Zhou, Yu-Wei, additional, Chen, Jun-Wen, additional, Chen, Yi-Lin, additional, Liu, Jie-Long, additional, Yang, Ling, additional, Hou, Bin, additional, Ma, Xiao-Hua, additional, and Hao, Yue, additional

Published
2022
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5. 8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

Author

Liu, Jie-Long, primary, Zhu, Jie-Jie, additional, Mi, Min-Han, additional, Zhu, Qing, additional, Liu, Si-Yu, additional, Wang, Peng-Fei, additional, Zhou, Yu-Wei, additional, Zhao, Zi-Yue, additional, Zhou, Jiu-Ding, additional, Zhang, Meng, additional, Wu, Mei, additional, Hou, Bin, additional, Wang, Hong, additional, Yang, Ling, additional, Ma, Xiao-Hua, additional, and Hao, Yue, additional

Published
2022
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6. Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax·VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates.

Author

Wang, Peng-Fei, Mi, Min-Han, Zhang, Meng, Zhu, Qing, Zhu, Jie-Jie, Zhou, Yu-Wei, Chen, Jun-Wen, Chen, Yi-Lin, Liu, Jie-Long, Yang, Ling, Hou, Bin, Ma, Xiao-Hua, and Hao, Yue

Subjects
*MILLIMETER wave devices, *GALLIUM nitride, *BREAKDOWN voltage, *MODULATION-doped field-effect transistors, *POWER density, *ELECTRIC fields
Abstract

In this work, ultrathin barrier (∼6 nm) AlGaN/GaN high-electron-mobility transistors (HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated and analyzed. Since the proposed scheme of gate dielectric and SFP effectively suppresses the gate leakage and alleviates the peak electric field (E-field) around gate region, the maximum breakdown voltage (VBK) was improved to 92 V, which is 54 V higher than that of the conventional device. The fabricated ultrathin AlGaN/GaN HEMT with 60-nm SFP-T-gate exhibited the peak fT of 177 GHz and peak fmax of 393 GHz, yielding high figure-of-merits of fT · VBK = 16 THz V and fmax·VBK = 36 THz V. Moreover, load-pull measurements at 30 GHz reveal that these devices deliver output power density (Pout) of 4.6 W/mm at Vds = 20 V and high power-added efficiency up to 52.5% at Vds = 10 V. Essentially, the experimental results indicate that the employment of SFP and in situ SiN gate dielectric is an attractive approach to balance the breakdown and speed for millimeter wave devices. [ABSTRACT FROM AUTHOR]

Published
2022
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7. Trap analysis of composite 2D–3D channel in AlGaN/GaN/graded-AlGaN:Si/GaN:C multi-heterostructure at different temperatures

Author

Hu, Sheng, primary, Yang, Ling, additional, Mi, Min-Han, additional, Hou, Bin, additional, Liu, Sheng, additional, Zhang, Meng, additional, Wu, Mei, additional, Zhu, Qing, additional, Wu, Sheng, additional, Lu, Yang, additional, Zhu, Jie-Jie, additional, Zhou, Xiao-Wei, additional, Lv, Ling, additional, Ma, Xiao-Hua, additional, and Hao, Yue, additional

Published
2020
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8. Proton irradiation impact on interface traps under Schottky contact in AlGaN/GaN heterostructure

Author

Zheng, Xue-Feng, primary, Chen, Guan-Jun, additional, Wang, Xiao-Hu, additional, Wang, Ying-Zhe, additional, Wang, Chong, additional, Mao, Wei, additional, Lu, Yang, additional, Hou, Bin, additional, Mi, Min-Han, additional, Lv, Ling, additional, Cao, Yan-Rong, additional, Zhu, Qing, additional, Guo, Gang, additional, Ma, Pei-Jun, additional, Ma, Xiao-Hua, additional, and Hao, Yue, additional

Published
2020
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15. Record combination fmax · Vbr of 25 THz·V in AlGaN/GaN HEMT with plasma treatment.

Author

Mi, Min-Han, Ma, Xiao-Hua, Yang, Ling, Lu, Yang, Hou, Bin, Zhang, Meng, Zhang, Heng-Shuang, Wu, Sheng, and Hao, Yue

Subjects
*MODULATION-doped field-effect transistors, *THERAPEUTICS, *BRUGADA syndrome, *BREAKDOWN voltage, *FREQUENCIES of oscillating systems
Abstract

A combination of high maximum oscillation frequency (fmax) and breakdown voltage (Vbr) was achieved in AlGaN/GaN high electron mobility transistors (HEMTs) with N2O plasma treatment on the access region. The breakdown voltage is improved from 37 V to 80 V due to the formation of oxide layer in the gate region. A suppressed current collapse is obtained due to plasma treatment on the gate-source and the gate-drain regions. The effect of the present passivation method is almost the same with that of the conventional SiN passivation method, meanwhile it can avoid introducing additional parasitic capacitance due to thinner thickness. The small signal measurement shows that HEMT can yield fT and fmax of 98 and 322 GHz, respectively, higher than that of 70 and 224 GHz for the non-treated HEMT. By using the plasma treatment technique, the HEMT can simultaneously exhibit high fmax and Vbr with a record fmax ⋅ Vbr of 25 THz ⋅ V. [ABSTRACT FROM AUTHOR]

Published
2019
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22. Improved performance of AlGaN/GaN HEMT by N2O plasma pre-treatment.

Author

Mi Min-Han, Zhang Kai, Zhao Sheng-Lei, Wang Chong, Zhang Jin-Cheng, Ma Xiao-Hua, and Hao Yue

Subjects
*MODULATION-doped field-effect transistors, *NITROUS oxide, *PLASMA-enhanced chemical vapor deposition, *ELECTRIC admittance, *METAL semiconductor field-effect transistors, *METAL organic chemical vapor deposition, *THERAPEUTICS
Abstract

The influence of an N2O plasma pre-treatment technique on characteristics of AlGaN/GaN high electron mobility transistor (HEMT) prepared by using a plasma-enhanced chemical vapor deposition (PECVD) system is presented. After the plasma treatment, the peak transconductance (gm) increases from 209 mS/mm to 293 mS/mm. Moreover, it is observed that the reverse gate leakage current is lowered by one order of magnitude and the drain current dispersion is improved in the plasma-treated device. From the analysis of frequency-dependent conductance, it can be seen that the trap state density (DT) and time constant (τT) of the N2O-treated device are smaller than those of a non-treated device. The results indicate that the N2O plasma pre-pretreatment before the gate metal deposition could be a promising approach to enhancing the performance of the device. [ABSTRACT FROM AUTHOR]

Published
2015
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