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Traditional lighting is focused on the prevention of hardware failures. With the trend towards controlled and connected systems, other components will start playing an equal role in the reliability of it. Here reliability needs to be replaced by availability and other modeling approaches are to be considered. System prognostics and health management is the next step to service the connected complex systems in the most effective way possible. In this chapter, we will highlight the next frontiers that will need to be taken in order to move the traditional lighting catastrophic failure thinking into a thinking more towards new ways how system (degraded) functions can fail or be compromised. Results in the failure mode of lumen maintenance and its uncertainty are presented. An industrial use case is presented demonstrating how smart lighting will eventually be able to forecast maintenance schedules more efficiently.

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

This work describes the design, modelling and realisation of the mechanical part of a non-linear MEMS accelerometer intended for large displacement behaviour. For this, a mass/spring system was designed with an extremely low resonance frequency. In this work the mechanical behaviour was verified by measurements done using an optical setup, including a laser and photodiode. The results are a resonance frequency of 12.6 Hz, which can be further tuned depending on the application by varying the mass, beam thickness and tilt of the structure. This results in a mechanical sensitivity of 0.16 [mm/ms-2]. The future goal of this work is to integrate a read-out scheme on wafer level, for example electrostatically.