29 results on '"Mikhailova, Maya P."'
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2. INDIUM ARSENIDE (InAs)
3. GALLIUM INDIUM ARSENIDE ANTIMONIDE (GaxIn1−xASySb1−y)
4. III-V/II-VI Hybrid Quantum Well Mid-Infrared Lasers
5. Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells
6. Superlinear Luminescence and Enhancement of Optical Power in GaSb-based Heterostructures with High Conduction-Band Offsets and Nanostructures with Deep Quantum Wells
7. III-V/II-VI Hybrid Quantum Well Mid-Infrared Lasers
8. Gallium Antimonide-Based Photodiodes and Thermophotovoltaic Devices
9. Interface luminescence and lasing at a type II single broken-gap heterojunction
10. Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity
11. Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements
12. Novel hybrid III-V/II-VI mid-infrared laser structures with high asymmetric band offset confinements.
13. Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity.
14. Fabrication details of GaInAsSb-based photodiode heterostructures.
15. High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement.
16. High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement
17. Novel portable optical analyzers based on light-emitting diodes and photodiodes in the 2- to 5-um spectral range
18. Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction
19. Superlinearity and temperature dependence of electroluminescence in heterostructures with deep AlSb/InAs1-x Sbx /AlSb quantum well
20. Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 μm
21. Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5μm spectral range
22. Suppression of Auger recombination in the diode lasers based on type II InAsSb/InAsSbP and InAs/GaInAsSb heterostructures.
23. Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction.
24. Low-noise GaInAsSb/GaAlAsSb SAM avalance photodiode in the 1.6-2.5m spectral range.
25. Semiconductor lasers and photodiodes for gas analysis in the spectral range 1.8-2.5 m.
26. Type-II heterojunctions in GaSb-InAs solid solutions: physics and applications.
27. Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature.
28. Optoelectronic LED-photodiode pairs for moisture and gas sensors in the spectral range 1.8-4.8 um
29. Interface luminescence and lasing at a type II single broken-gap heterojunction.
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