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Integration of a complementary metal-oxide semiconductor (CMOS) and monolayer graphene is a significant step toward realizing low-cost, low-power, heterogeneous nanoelectronic devices based on two-dimensional materials such as gas sensors capable of enabling future mobile sensor networks for the Internet of Things (IoT). But CMOS and post-CMOS process parameters such as temperature and material limits, and the low-power requirements of untethered sensors in general, pose considerable barriers to heterogeneous integration. We demonstrate the first monolithically integrated CMOS-monolayer graphene gas sensor, with a minimal number of post-CMOS processing steps, to realize a gas sensor platform that combines the superior gas sensitivity of monolayer graphene with the low power consumption and cost advantages of a silicon CMOS platform. Mature 0.18 µm CMOS technology provides the driving circuit for directly integrated graphene chemiresistive junctions in a radio frequency (RF) circuit platform. This work provides important advances in scalable and feasible RF gas sensors specifically, and toward monolithic heterogeneous graphene–CMOS integration generally. The combination of monolayer graphene with a silicon-based CMOS platform results in a monolithically integrated gas sensor. A team led by Deji Akinwande at the University of Texas at Austin developed a graphene-based gas sensing platform that leverages the remarkable gas sensitivity of graphene and the well-established advantages of silicon technology. Using a commercially available 0.18 μm CMOS radio-frequency (RF) circuit, the authors fabricated graphene chemi-resistive junctions atop the CMOS readout circuit, whereby the interaction between gas molecules and graphene can be read as an output frequency while minimizing the number of post-processing steps. The built-in RF functionalities enable a direct wireless connection with the transducer and offer reduced flicker noise, as opposed to direct-current sensors.

Despite the widespread interest in graphene electronics over the past decade, high-performance graphene field-effect transistors (GFETs) on flexible substrates have been rarely achieved, even though this atomic sheet is widely understood to have greater prospects for flexible electronic systems. In this article, we report detailed studies on the electrical and mechanical properties of vapor synthesized high-quality monolayer graphene integrated onto flexible polyimide substrates. Flexible graphene transistors with high-k dielectric afforded intrinsic gain, maximum carrier mobilities of 3900 cm(2)/V·s, and importantly, 25 GHz cutoff frequency, which is more than a factor of 2.5 times higher than prior results. Mechanical studies reveal robust transistor performance under repeated bending, down to 0.7 mm bending radius, whose tensile strain is a factor of 2-5 times higher than in prior studies. In addition, integration of functional coatings such as highly hydrophobic fluoropolymers combined with the self-passivation properties of the polyimide substrate provides water-resistant protection without compromising flexibility, which is an important advancement for the realization of future robust flexible systems based on graphene.

This article demonstrated monolayer graphene grown on annealed Cu (111) films on standard oxidized 100-mm Si wafers with higher quality than existing reports. Large area Raman mapping indicated high uniformity (>97% coverage) of monolayer graphene with immeasurable defects (>95% defect-negligible) across the entire wafer. Key to these results is the phase transition of evaporated copper films from amorphous to (111) preferred crystalline, which resulted in subsequent growth of high quality graphene, as corroborated by X-ray diffraction and electron backscatter diffraction. Noticeably, such phase transition of the copper film was observed on a technologically ubiquitous Si wafer with a standard amorphous thermal oxide. A modified two-step etching transfer process was introduced to preserve the clean surface and electrical property of transferred monolayer graphene. The fabricated graphene field effect transistor on a flexible polyimide film achieved peak mobility over 4900 cm2/(V s) at ambient condition.

This paper summarizes the results of computational and experimental studies of an enhanced thin film solar structure. The cell structure consists of a reflective aluminum layer beneath an 80nm absorbing layer of amorphous silicon, coated with a top layer of transparent and conductive indium tin oxide (ITO). The structure is mounted on a glass substrate. We first use constrained optimization techniques along with numerical solvers of the electromagnetic equations to specify the layer thicknesses of the design for maximized efficiency. Numerical analysis suggests that solar absorptivity in the thin film silicon can be enhanced by a factor of 2. The proposed design is then fabricated using Plasma Enhanced Chemical Vapor Deposition techniques, along with a control sample of bare silicon absorber for comparison. AFM imaging and spectrophotometry experiments are applied to estimate the realized thin film dimensions, deposition error, unwanted oxidation volume and the resulting reflectivity spectra. Comparisons of the measured and simulated reflectivity spectra of the fabricated cells, as well as Monte Carlo simulations based on incorporating random geometry errors in the numerical simulations suggest that the measured spectra are in accordance with the expected curves from simulations.Copyright © 2013 by ASME

We report on employing molecular doping to enhance the sensitivity of graphene sensors synthesized via chemical vapor deposition to NH3 molecules at room temperature. We experimentally show that doping an as-fabricated graphene sensor with NO2 gas improves sensitivity of its electrical resistance to adsorption of NH3 molecules by about an order of magnitude. The detection limit of our NO2-doped graphene sensor is found to be ∼200 parts per billion (ppb), compared to ∼1400 ppb before doping. Electrical characterization and Raman spectroscopy measurements on graphene field-effect transistors show that adsorption of NO2 molecules significantly increases hole concentration in graphene, which results in the observed sensitivity enhancement.

We report new findings on the chemical vapor deposition (CVD) of monolayer graphene with negligible defects (≥95% negligible defect-peak over 200 μm × 200 μm areas) on evaporated copper films. Compared to copper foils used in the CVD of graphene, several new unexpected results have been observed including high-quality monolayer synthesis at temperatures

Recent progress in synthesis of large area mono- or few layer graphene on copper catalyst[1] has enabled various fascinating sensor, optical and electrical applications.[2–4] The idea for graphene to be employed for next generation nanoelectronics, however, require high quality films with wafer-scale uniformity and low defect density. Here we report our progress on wafer-scale synthesis and transfer of low-defect monolayer graphene for field-effect transistors that will enable graphene nanoelectronics.

Nanowire ensembles on non-single crystalline substrates are quickly becoming a popular active material moving towards commercial device production. In this study, ensembles of InP nanowires were grown by metal-organic chemical vapor deposition on non-single crystalline substrates. The samples are complicated by the presence of differing lattice types, geometries, crystal orientations and physical interaction that occurs in samples with high areal densities. The optical properties of the nanowires were studied by photoluminescence and Raman spectroscopy at various temperatures. The spectra are interpreted with particular emphasis on the above-mentioned complications.

Ensembles of indium phosphide nanowires were grown on amorphous quartz substrates and their optical properties were examined at various cryogenic temperatures. Complex dynamics result from the large areal densities, random orientation, combination of both zincblende and wurtzite phases, and the geometries of the nanowires. Those complex dynamics are discussed in relation to their effect on the temperature dependence of photoluminescence and Raman spectroscopy. Five peaks are found to exist in the photoluminescence spectra at low temperatures which are attributed to radiative recombinations associated with quantum confined zinc blende, quantum confined excitons in zinc blende, quantum confined wurtzite, excitons in bulk zinc blende and impurity states. An energy transfer mechanism between two types of radiative recombinations among the five is proposed to explain intensity variations and the temperature dependence of the PL peaks is discussed. The Raman spectra is observed to have peaks created by a combination of zinc blende and wurtzite vibrational modes which is explained by folding the phonon dispersion.

By acoustically irradiating pristine, white, electrically insulating h- BN in aqueous environment we were able to invert its material properties. The resulting dark, electrically conductive h- BN (referred to as partially oxidized h- BN or PO- hBN ) shows a significant decrease in optical transmission (>60%) and bandgap (from 5.46 eV to 3.97 eV). Besides employing a wide variety of analytical techniques (optical and electrical measurements, Raman spectroscopy, SEM imaging, EDS, X-Ray diffraction, XPS and TOF-SIMS) to study the material properties of pristine and irradiated h- BN , our investigation suggests the basic mechanism leading to the dramatic changes following the acoustic treatment. We find that the degree of inversion arises from the degree of h- BN surface or edge oxidation which heavily depends on the acoustic energy density provided to the pristine h- BN platelets during the solution-based process. This provides a facile avenue for the realization of materials with tuned physical and chemical properties that depart from the intrinsic behavior of pristine h- BN .