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145 results on '"Milosavljevic, I."'

1. Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation

Author

Reed, M. D., Maune, B. M., Andrews, R. W., Borselli, M. G., Eng, K., Jura, M. P., Kiselev, A. A., Ladd, T. D., Merkel, S. T., Milosavljevic, I., Pritchett, E. J., Rakher, M. T., Ross, R. S., Schmitz, A. E., Smith, A., Wright, J. A., Gyure, M. F., and Hunter, A. T.

Subjects
Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We demonstrate improved operation of exchange-coupled semiconductor quantum dots by substantially reducing the sensitivity of exchange operations to charge noise. The method involves biasing a double-dot symmetrically between the charge-state anti-crossings, where the derivative of the exchange energy with respect to gate voltages is minimized. Exchange remains highly tunable by adjusting the tunnel coupling. We find that this method reduces the dephasing effect of charge noise by more than a factor of five in comparison to operation near a charge-state anti-crossing, increasing the number of observable exchange oscillations in our qubit by a similar factor. Performance also improves with exchange rate, favoring fast quantum operations., Comment: 10 pages, 8 figures

Published
2015
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2. Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor

Author

Croke, E. T., Borselli, M. G., Gyure, M. F., Bui, S. S., Milosavljevic, I. I., Ross, R. S., Schmitz, A. E., and Hunter, A. T.

Subjects
Condensed Matter - Mesoscale and Nanoscale Physics
Abstract

We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper well remains empty under the free surface. A small air-bridged gate contacts the surface, and is positively biased to draw laterally confined electrons into the upper well. Electrons tunneling between this accumulation-mode dot and the lower well are detected using a quantum point contact (QPC), located slightly offset from the dot gate. The charge state of the dot is measured by monitoring the differential transconductance of the QPC near pinch-off. Addition spectra starting with N=0 were observed as a function of gate voltage. DC sensitivity to single electrons was determined to be as high as 8.6%, resulting in a signal-to-noise ratio of ~9:1 with an equivalent noise bandwidth of 12.1 kHz. Analysis of random telegraph signals associated with the zero to one electron transition allowed a measurement of the lifetimes for the filled and empty states of the one-electron dot: 0.38 ms and 0.22 ms, respectively, for a device with a 10 nm AlInAs tunnel barrier between the two wells., Comment: 3 pages, 3 figures

Published
2009
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3. Inhibition of gasotransmitters production and calcium influx affect cardiodynamic variables and cardiac oxidative stress in propofol-anesthetized male Wistar rats

Author

Djuric, M., Turnic, T. Nikolic, Kostic, S., Radonjic, K., Jeremic, J., Petkovic, A., Bradic, J., Milosavljevic, I., Srejovic, I., Zivkovic, V., Djuric, D., Jakovljevic, V., and Stevanovic, P.

Subjects
Heart rate, Oxidative stress, Vasodilator agents, Enzymes, Heart, Phenols (Class of compounds), Heart beat, Phenols, Vasodilators
Abstract

Introduction Propofol (2,6-diisopropylphenol) belongs to a group of general anesthetics, which is used for sedation or for anesthesia induction during surgery. In relation to other anesthetics, propofol has several significant [...], It has been assumed that the cardioprotective effects of propofol are due to its non-anesthetic pleiotropic cardiac and vasodilator effects, in which gasotransmitters (NO, [H.sub.2]S, and CO) as well as calcium influx could be involved. The study on isolated rat heart was performed using 4 experimental groups (n = 7 in each): (1) bolus injection of propofol (100 mg/kg body mass, i.p.); (2) L-NAME (NO synthase inhibitor, 60 mg/kg body mass, i.p.) + propofol; (3) DL-PAG ([H.sub.2]S synthase inhibitor, 50 mg/kg body mass, i.p.) + propofol; (4) ZnPPIX (CO synthase inhibitor, 50 [micro]mol/kg body mass, i.p.) + propofol. Before and after the verapamil (3 [micro]mol/L) administration, cardiodynamic parameters were recorded (dp/[dt.sub.max], dp/[dt.sub.min], systolic left ventricular pressure, diastolic left ventricular pressure, heart rate, coronary flow), as well as coronary and cardiac oxidative stress parameters. The results showed significant increases of diastolic left ventricular pressure following NO and CO inhibition, but also increases of coronary flow following [H.sub.2]S and CO inhibition. Following verapamil administration, significant decreases of dp/[dt.sub.max]were noted after NO and CO inhibition, then increase of diastolic left ventricular pressure following CO inhibition, and increase of coronary flow following NO, [H.sub.2]S, or CO inhibition. Oxidative stress markers were increased but catalase activity was significantly decreased in cardiac tissue. Gasotransmitters and calcium influx are involved in pleiotropic cardiovascular effects of propofol in male Wistar rats. Key words: propofol, L-NAME, DL-PAG, ZnPPIX, verapamil, cardiodynamics, oxidative stress, antioxidative enzymes. Nous avons formule l'hypothese selon laquelle les effets cardioprotecteurs du propofol sont lies a ses effets cardiaques pleiotropiques et vasodilatateurs non anesthesiques dans lesquels des gazotransmetteurs (NO, [H.sub.2]S et CO), ainsi que l'influx de calcium pourraient jouer un role. L'etude de creurs isoles de rats a ete effectuee sur 4 groupes experimentaux (n = 7 pour chacun): (1) injection de propofol par bolus (100 mg/kg de masse corporelle, i.p.); (2) L-NAME (inhibiteur de la NO synthase, 60 mg/kg de masse corporelle, i.p.) + propofol; (3) DL-PAG (inhibiteur de la [H.sub.2]S synthase, 50 mg/kg de masse corporelle, i.p.) + propofol; (4) ZnPPIX (inhibiteur de la CO synthase, 50 [micro]mol/kg de masse corporelle, i.p.) + propofol. Nous avons enregistre des parametres cardiodynamiques (dp/[dt.sub.max] et dp/[dt.sub.min], pression ventriculaire gauche systolique et pression ventriculaire gauche diastolique, frequence cardiaque et flux coronarien) avant et apres l'administration de verapamil (3 [micro]mol/L), ainsi que des parametres de stress oxydatif coronariens et cardiaques. Les resultats ont montre des augmentations marquees de la pression ventriculaire gauche diastolique a la suite de l'inhibition du NO et du CO, mais aussi une augmentation du flux coronarien a la suite de l'inhibition du [H.sub.2]S et du CO. Apres l'administration de verapamil, nous avons observe de nettes diminutions du dp/[dt.sub.max] a la suite de l'inhibition du NO et du CO, puis une augmentation de la pression ventriculaire gauche diastolique a la suite de l'inhibition du CO, ainsi qu'une augmentation du flux coronarien a la suite de l'inhibition du NO, du [H.sub.2]S ou du CO. Nous avons observe une hausse des marqueurs du stress oxydatif, mais une diminution notable de l'activite de la catalase dans le tissu cardiaque. En somme, les gazotransmetteurs et l'influx de calcium jouent un role dans les effets cardiovasculaires pleiotropiques du propofol chez le rat Wistar male. [Traduit par la Redaction] Mots-cles: propofol, L-NAME, DL-PAG, ZnPPIX, verapamil, cardiodynamie, stress oxydatif, enzymes antioxydantes.

Published
2019
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4. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications

Author

Denninghoff, D., primary, Arkun, E., additional, Moon, J.-S., additional, Tran, H., additional, Corrion, A., additional, Siddiqi, G., additional, Fanning, D., additional, Fireman, M., additional, Tai, J., additional, Wong, J., additional, Grabar, B., additional, Dao, C., additional, Milosavljevic, I., additional, Tran, R., additional, Getter, A., additional, Clapper, A., additional, Dadafshar, S., additional, Georgieva, J., additional, Moyer, H., additional, Miller, N., additional, Elliott, M., additional, and Gilbert, R., additional

Published
2023
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11. Reduced Sensitivity to Charge Noise in Semiconductor Spin Qubits via Symmetric Operation

Author

Reed, M. D., primary, Maune, B. M., additional, Andrews, R. W., additional, Borselli, M. G., additional, Eng, K., additional, Jura, M. P., additional, Kiselev, A. A., additional, Ladd, T. D., additional, Merkel, S. T., additional, Milosavljevic, I., additional, Pritchett, E. J., additional, Rakher, M. T., additional, Ross, R. S., additional, Schmitz, A. E., additional, Smith, A., additional, Wright, J. A., additional, Gyure, M. F., additional, and Hunter, A. T., additional

Published
2016
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12. Undoped accumulation-mode Si/SiGe quantum dots

Author

Borselli, M G, primary, Eng, K, additional, Ross, R S, additional, Hazard, T M, additional, Holabird, K S, additional, Huang, B, additional, Kiselev, A A, additional, Deelman, P W, additional, Warren, L D, additional, Milosavljevic, I, additional, Schmitz, A E, additional, Sokolich, M, additional, Gyure, M F, additional, and Hunter, A T, additional

Published
2015
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15. Novel packaging, cooling and interconnection method for GaN high performance power amplifiers and GaN based RF front-ends

Author

Margomenos, A., primary, Micovic, M., additional, Kurdoghlian, A., additional, Shinohara, K., additional, Brown, D. F., additional, Butler, C., additional, Milosavljevic, I., additional, Hasimoto, P. B., additional, Grabar, R., additional, Willadsen, P., additional, Bowen, R., additional, Patterson, P., additional, Wetzel, M., additional, and Chow, D. H., additional

Published
2012
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16. 92–96 GHz GaN power amplifiers

Author

Micovic, M., primary, Kurdoghlian, A., additional, Margomenos, A., additional, Brown, D. F., additional, Shinohara, K., additional, Burnham, S., additional, Milosavljevic, I., additional, Bowen, R., additional, Williams, A.J., additional, Hashimoto, P., additional, Grabar, R., additional, Butler, C., additional, Schmitz, A., additional, Willadsen, P. J., additional, and Chow, D. H., additional

Published
2012
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17. Ultra-low resistance ohmic contacts in graphene field effect transistors

Author

Moon, J. S., primary, Antcliffe, M., additional, Seo, H. C., additional, Curtis, D., additional, Lin, S., additional, Schmitz, A., additional, Milosavljevic, I., additional, Kiselev, A. A., additional, Ross, R. S., additional, Gaskill, D. K., additional, Campbell, P. M., additional, Fitch, R. C., additional, Lee, K.-M., additional, and Asbeck, P., additional

Published
2012
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18. Graphene review: An emerging RF technology

Author

Moon, J. S., primary, Antcliffe, M., additional, Seo, H. C., additional, Lin, S. C., additional, Schmitz, A., additional, Milosavljevic, I., additional, McCalla, K., additional, Wong, D., additional, Gaskill, D. K., additional, Campbell, P. M., additional, Lee, K.-M., additional, and Asbeck, P., additional

Published
2012
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23. Device scaling technologies for ultra-high-speed GaN-HEMTs

Author

Shinohara, K., primary, Regan, D., additional, Milosavljevic, I., additional, Corrion, A. L., additional, Brown, D. F., additional, Burnham, S., additional, Willadsen, P. J., additional, Butler, C., additional, Schmitz, A., additional, Kim, S., additional, Lee, V., additional, Ohoka, A., additional, Asbeck, P. M., additional, and Micovic, M., additional

Published
2011
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24. Monolithic Integration of Enhancement- and Depletion-Mode AlN/GaN/AlGaN DHFETs by Selective MBE Regrowth

Author

Brown, D. F., primary, Shinohara, K., additional, Williams, A., additional, Milosavljevic, I., additional, Grabar, R., additional, Hashimoto, P., additional, Willadsen, P. J., additional, Schmitz, A., additional, Corrion, A. L., additional, Kim, S., additional, Regan, D., additional, Butler, C. M., additional, Burnham, S. D., additional, and Micovic, M., additional

Published
2011
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25. Measurement of valley splitting in high-symmetry Si/SiGe quantum dots

Author

Borselli, M. G., primary, Ross, R. S., additional, Kiselev, A. A., additional, Croke, E. T., additional, Holabird, K. S., additional, Deelman, P. W., additional, Warren, L. D., additional, Alvarado-Rodriguez, I., additional, Milosavljevic, I., additional, Ku, F. C., additional, Wong, W. S., additional, Schmitz, A. E., additional, Sokolich, M., additional, Gyure, M. F., additional, and Hunter, A. T., additional

Published
2011
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27. 220GHz fT and 400GHz fmax in 40-nm GaN DH-HEMTs with re-grown ohmic

Author

Shinohara, K., primary, Corrion, A., additional, Regan, D., additional, Milosavljevic, I., additional, Brown, D., additional, Burnham, S., additional, Willadsen, P. J., additional, Butler, C., additional, Schmitz, A., additional, Wheeler, D., additional, Fung, A., additional, and Micovic, M., additional

Published
2010
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31. W-Band GaN MMIC with 842 mW output power at 88 GHz

Author

Micovic, M., primary, Kurdoghlian, A., additional, Shinohara, K., additional, Burnham, S., additional, Milosavljevic, I., additional, Hu, M., additional, Corrion, A., additional, Fung, A., additional, Lin, R., additional, Samoska, L., additional, Kangaslahti, P., additional, Lambrigtsen, B., additional, Goldsmith, P., additional, Wong, W.S., additional, Schmitz, A., additional, Hashimoto, P., additional, Willadsen, P. J., additional, and Chow, D. H., additional

Published
2010
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34. Q-Band GaN MMIC LNA Using a 0.15μm T-Gate Process

Author

Moyer, H. P., primary, Kurdoghlian, A., additional, Micovic, M., additional, Lee, T., additional, Hiramoto, R. O., additional, Be Zaire, M. J., additional, Nguyen, S., additional, Hashimoto, P., additional, Schmitz, A., additional, Milosavljevic, I., additional, Willadsen, P. J., additional, Wong, W.-S., additional, Antcliffe, M., additional, Wetzel, M. D., additional, and Hu, M., additional

Published
2008
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35. GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

Author

Micovic, M., primary, Kurdoghlian, A., additional, Moyer, H. P., additional, Hashimoto, P., additional, Hu, M., additional, Antcliffe, M., additional, Willadsen, P. J., additional, Wong, W. S., additional, Bowen, R., additional, Milosavljevic, I., additional, Yoon, Y., additional, Schmitz, A., additional, Wetzel, M., additional, McGuire, C., additional, Hughes, B., additional, and Chow, D. H., additional

Published
2008
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36. GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range

Author

Micovic, M., primary, Kurdoghlian, A., additional, Hashimoto, P., additional, Hu, M., additional, Antcliffe, M., additional, Willadsen, P. J., additional, Wong, W. S., additional, Bowen, R., additional, Milosavljevic, I., additional, Yoon, Y., additional, Schmitz, A., additional, Wetzel, M., additional, and Chow, D. H., additional

Published
2008
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37. Robust Broadband (4 GHz - 16 GHz) GaN MMIC LNA

Author

Micovic, M., primary, Kurdoghlian, A., additional, Lee, T., additional, Hiramoto, R. O., additional, Hashimoto, P., additional, Schmitz, A., additional, Milosavljevic, I., additional, Willadsen, P. J., additional, Wong, W.-S., additional, Antcliffe, M., additional, Wetzel, M., additional, Hu, M., additional, Delaney, M. J., additional, and Chow, D. H., additional

Published
2007
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38. GaN HFET for W-band Power Applications

Author

Micovic, M., primary, Kurdoghlian, A., additional, Hashimoto, P., additional, Hu, M., additional, Antcliffe, M., additional, Willadsen, P. J., additional, Wong, W. S., additional, Bowen, R., additional, Milosavljevic, I., additional, Schmitz, A., additional, Wetzel, M., additional, and Chow, D. H., additional

Published
2006
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40. GaN MMIC technology for microwave and millimeter-wave applications

Author

Micovic, M., primary, Kurdoghlian, A., additional, Moyer, H.P., additional, Hashimoto, P., additional, Schmitz, A., additional, Milosavljevic, I., additional, Willadsen, P.J., additional, Wong, W.-S., additional, Duvall, J., additional, Hu, M., additional, Wetzel, M., additional, and Chow, D.H., additional

Published
2005
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44. 70–105 GHz wideband GaN power amplifiers.

Author

Margomenos, A., Kurdoghlian, A., Micovic, M., Shinohara, K., Brown, D. F., Bowen, R., Milosavljevic, I., Grabar, R., Butler, C., Schmitz, A., Willadsen, P. J., Madhav, M., and Chow, D. H.

Published
2012

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