1. Pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure
- Author
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Min Tae Chung, Jung Soo Kang, Kyu Chang Park, and Ha Rim Lee
- Subjects
010302 applied physics ,Materials science ,Silicon ,business.industry ,Nanocrystalline silicon ,chemistry.chemical_element ,Nanotechnology ,02 engineering and technology ,021001 nanoscience & nanotechnology ,01 natural sciences ,Amorphous solid ,Carbon nanotube quantum dot ,Condensed Matter::Materials Science ,Field electron emission ,Carbon film ,chemistry ,0103 physical sciences ,Optoelectronics ,Crystalline silicon ,Thin film ,0210 nano-technology ,business - Abstract
We developed the novel pseudo crystalline silicon (pc-Si) thin films with carbon nanotube electron beam exposure technique. CNT emitters grown by resist-assisted patterning process is used for the source of electron beam to crystallize an amorphous Si (a-Si:H) thin films. The high electron energy form CNT emitters is enough to change phase to pseudo crystalline due to the network vibration of silicon atoms. The grain size distribution of Si thin films about 10∼20 nm. However, a cross section of HR-TEM image shows fully crystallized without grain boundaries.
- Published
- 2016