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Your search keyword '"Ming Xing Piao"' showing total 2 results
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2 results on '"Ming Xing Piao"'

1. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors.

Author

Jae-Sung Kim, Min-Kyu Joo, Ming Xing Piao, Seung-Eon Ahn, Yong-Hee Choi, Ho-Kyun Jang, and Gyu-Tae Kim

Subjects
THIN films spectra, CHARGE carriers, CONCENTRATION functions, PHOTOELECTRON spectroscopy, NOBLE gases, ZINC compounds
Abstract

Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented. [ABSTRACT FROM AUTHOR]

Published
2014
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2. Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Author

Ho Kyun Jang, Seung-Eon Ahn, Jae Sung Kim, Yong Hee Choi, Min-Kyu Joo, Ming Xing Piao, Gyu Tae Kim, School of Electrical Engineering [Korea University], Korea University [Seoul], Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Joseph Fourier - Grenoble 1 (UJF)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Institut National Polytechnique de Grenoble (INPG)-Centre National de la Recherche Scientifique (CNRS), Samsung Advanced Institute of Technology (SAIT), Samsung, and Samsung Electronics [Korea]

Subjects
Argon, Materials science, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Plasma, Electron spectroscopy, Oxygen, chemistry, X-ray photoelectron spectroscopy, Thin-film transistor, Charge carrier, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Thin film
Abstract

International audience; Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Published
2014
Full Text
View/download PDF

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