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Conventional magnetron sputter deposition of B 4 C uses Ar as the working gas. Here, we explore the magnetron sputter deposition of B 4 C with a Ne plasma, which is expected to exhibit larger sputtering yields than Ar. We study properties of films deposited with different substrate tilt angles with the magnetron source operated in either direct-current (DC) or radio-frequency (RF) mode in an Ar or Ne plasma. Results show that the B 4 C film properties are determined by a combination of sputtering ballistics and effects of the working gas on the plasma discharge and gas phase scattering of depositing species flux. At constant discharge power, deposition rates for Ar and Ne plasmas are similar, which is attributed to balancing effects of a higher ballistic sputtering yield of Ne and lower ion flux to the target. Both depositing B and C neutral species and bombarding ions have higher energies for the case of Ne plasmas. Films deposited with the RF-driven Ne plasma exhibit a uniform non-columnar structure, lowest oxygen impurity content, and highest mass density and mechanical properties at a cost of Ne incorporation and larger compressive residual stress. [ABSTRACT FROM AUTHOR]

Sputter deposition of B 4 C films with tailored physical properties remains a challenge. Here, we systematically study how substrate temperature influences the properties of B 4 C films deposited by direct current magnetron sputtering onto planar substrates held at temperatures in the range of 100 − 510 ° C. Results show that all films are amorphous stoichiometric B 4 C , with low O content of ∼ 1 at. %. Films deposited onto substrates at 100 ° C exhibit high compressive residual stress and decreased mechanical properties. For elevated substrate temperatures in the range of 180 − 510 ° C , film mass density, surface roughness, Young's modulus, and hardness are weakly dependent on substrate temperature. However, in this temperature range, an increase in substrate temperature leads to larger residual compressive stress accompanied by a corresponding reduction in the concentration of nanoscale inhomogeneities. At least for the landing atom ballistics conditions studied here, a substrate temperature range of ∼ 185 − 250 ° C is optimum for growing films with near-zero intrinsic residual stress. The overall weak substrate temperature dependence of film properties revealed in this work is favorable for the development of a robust deposition process, particularly for the case of deposition onto non-planar substrates where temperature control is often challenging. [ABSTRACT FROM AUTHOR]

Many applications of boron carbide ( B 4 C) films entail deposition on non-planar substrates, necessitating a better understanding of oblique angle deposition phenomena. Here, we systematically study the effect of substrate tilt on properties of B 4 C films with thicknesses up to 10 μ m deposited by direct current magnetron sputtering. Results show that all films are amorphous and columnar with an average column width of ∼ 100 nm, independent of substrate tilt. Column tilt angles are limited to ∼ 20 ° even for substrate tilt of 80 °. Film density, residual stress, and the refractive index weakly (within ≲ 20 %) depend on substrate tilt. Oxygen impurities bond preferentially with carbon atoms in inter-columnar regions. Substrate tilt has a major effect on mechanical properties that decrease by ∼ 50 % , suggesting weak interconnection between nano-columns. Implications of these observations for the deposition onto non-planar substrates are discussed. [ABSTRACT FROM AUTHOR]

Significant challenges have been faced in the manufacturing of low-stress B 4 C films. Here, we demonstrate a set of process parameters for direct-current magnetron sputter deposition of smooth, high-purity, amorphous B 4 C films with near-zero total residual stress and with thicknesses up to 10 μ m. Films are characterized by a combination of high-energy ion scattering, x-ray diffraction, electron microscopy, and stress measurements based on substrate curvature. In order to facilitate the process transfer to other sputtering geometries, the favorable deposition conditions are correlated with distributions of landing energies and incident angles of depositing species estimated by Monte Carlo simulations of ballistic collisions and gas phase atomic transport. Based on such simulations, a decrease in compressive stress with increasing Ar working gas pressure is attributed to the corresponding broadening of the angular distribution of depositing species and associated atomic shadowing effects. [ABSTRACT FROM AUTHOR]

The development of a nearly defect-free reticle blank is an important challenge facing extreme ultraviolet lithography (EUVL). The core element of an EUVL reticle blank is the reflective Mo/Si multilayer film, and deposition of Mo/Si on very small substrate defects can result in critical Mo/Si phase defects. In this article we present a method for repairing Mo/Si multilayer film phase defects in EUVL reticle blanks. An electron beam is used to deposit energy in the immediate vicinity of the defect, producing a small local contraction of the layer thicknesses due to silicide formation at the Mo/Si interfaces. We show in simulations that this contraction can significantly reduce the original structural deformation. We also present experimental results showing that it is possible to use an electron beam to controllably produce depressions in Mo/Si with nanometer-scale depths, and that this can be achieved without significantly impairing the reflective properties of the Mo/Si multilayer films. © 2002 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Discusses a study which employed ion-assisted pulsed laser deposition to produce films containing cubic boron nitride (c-BN) films. Properties of c-BN and diamond; Mechanism of c-BN growth; Characterization of c-BN.

Presents information on a study which performed Brillouin scattering spectroscopy (BSS) measurements on single-crystal transition-metal nitride superlattices and mismatched superlattices. Description of BSS measurements conducted; Results of x-ray diffraction analysis; Surface wave velocity for superlattices.

Presents a study which examined the microstructure of cubic boron nitride thin films grown by ion-assisted pulsed laser deposition. Experimental procedure; Phase identification in the irradiated and unirradiated regions; Distribution of the turbostratic material.

Presents a study which determined the elastic constants of single-crystal NbN, VN, and TiN films from surface acoustics wave dispersion curves. Way in which wave dispersion curves were obtained; Functions of the angle of propagation; Role of a modified simplex method.

Presents a study which examined the crystallographic texture exhibited by cubic boron nitride in thin films grown by ion-assisted deposition. Background on the sample material; Description of the experimental setup; Results.