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InAs nanowires are emerging as go-to materials in a variety of applications ranging from optoelectronics to nanoelectronics, yet a consensus on their mechanical properties is still lacking. The mechanical properties of wurtzite InAs nanowires are here investigated via a multitechnique approach, exploiting electron microscopies, ultrafast photoacoustics, and finite element simulations. A benchmarked elastic matrix is provided and a Young modulus of 97 GPa is obtained, thus clarifying the debated issue of InAs NW elastic properties. The validity of the analytical approaches and approximations commonly adopted to retrieve the elastic properties from ultrafast spectroscopies is discussed. The mechanism triggering the oscillations is unveiled. Nanowire oscillations in this system arise from a sudden expansion of the supporting substrate rather than the nanowire itself. This mechanism constitutes a new paradigm, being at variance with respect to the excitation mechanisms so far identified in ultrafast experiments on nanowires and on a plethora of nanosystems. The present findings are relevant in view of applications involving InAs nanowires, knowledge of their mechanical properties being crucial for any device engineering beyond a trial-and-error approach. The results bear generality beyond the specific case, the launching mechanism potentially encompassing a variety of systems serving as nano-optomechanical resonators.

The Josephson effect results from the coupling of two superconductors across a spacer such as an insulator, a normal metal or a ferromagnet to yield a phase coherent quantum state. However, in junctions with ferromagnetic spacers, very long-range Josephson effects have remained elusive. Here we demonstrate extremely long-range (micrometric) high-temperature (tens of kelvins) Josephson coupling across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7. These planar junctions, in addition to large critical currents, display the hallmarks of Josephson physics, such as critical current oscillations driven by magnetic flux quantization and quantum phase locking effects under microwave excitation (Shapiro steps). The latter display an anomalous doubling of the Josephson frequency predicted by several theories. In addition to its fundamental interest, the marriage between high-temperature, dissipationless quantum coherent transport and full spin polarization brings opportunities for the practical realization of superconducting spintronics, and opens new perspectives for quantum computing. Josephson coupling over micrometres and at tens of kelvins is demonstrated across the half-metallic manganite La0.7Sr0.3MnO3 combined with the superconducting cuprate YBa2Cu3O7.

In a family of experiments carried on all-metallic supercurrent nano-transistors a surprising gating effect has been recently shown. These include the full suppression of the critical supercurrent, the increase of quasiparticle population, the manipulation of the superconducting phase, and the broadening of the switching current distributions. Aside from the high potential for future applications, these findings raised fundamental questions on the origin of these phenomena. To date, two complementary hypotheses are under debate: an electrostatically-triggered orbital polarization at the superconductor surface, or the injection of highly-energetic quasiparticles extracted from the gate. Here, we tackle this crucial issue via a fully suspended gate-controlled Ti nano-transistor. Our geometry allows to eliminate any direct injection of quasiparticles through the substrate thereby making cold electron field emission through the vacuum the only possible charge transport mechanism. With the aid of a fully numerical 3D model in combination with the observed phenomenology and thermal considerations we can rule out, with any realistic likelihood, the occurrence of cold electron field emission. Excluding these two trivial phenomena is pivotal in light of understanding the microscopic nature of gating effect in superconducting nanostructures, which represents an unsolved puzzle in contemporary superconductivity. Yet, from the technological point of view, our suspended fabrication technique provides the enabling technology to implement a variety of applications and fundamental studies combining, for instance, superconductivity with nano-mechanics., 7 pages, 4 color figures

The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric field effect in these systems. Here, we demonstrate an enhancement of up to 30 % in critical current in the type II superconductor NbN, micro- and nano superconducting bridges, tunable via a back-gate voltage. Our suggested plausible mechanism of this enhancement in critical current based on surface nucleation and pinning of Abrikosov vortices is consistent with expectations and observations for type-II superconductor films with thicknesses comparable to their coherence length. Furthermore we demonstrate infinite electroresistance and a hysteretic resistance dependence on the applied electric field which could lead to logic and memory applications in a superconductors-based low-dissipation digital computing paradigm. Our work thus provides the first demonstration of an electric field enhancement in the superconducting property in metallic superconductors, constituting a crucial step towards understanding of electric field-effects on the fundamental properties of a superconductor and its exploitation for future technologies.

We demonstrate an original method based on controlled oxidation for creating high-quality tunnel junctions between superconducting Al reservoirs and InAs semiconductor nanowires (NWs). We show clean tunnel characteristics with a current suppression by >4 orders of magnitude for a junction bias well below the Al gap of ?0 ? 200 ?eV. The experimental data agree well with the Bardeen-Cooper-Schrieffer theoretical expectations for a superconducting tunnel junction. The studied devices employ small-scale tunnel contacts functioning as thermometers as well as larger electrodes that provide proof-of-principle active cooling of the electron distribution in the NWs. A peak refrigeration of approximately ?T = 10 mK is achieved at a bath temperature of Tbath ? 250-350 mK for our prototype devices. This method introduces important perspectives for the investigation of the thermoelectric effects in semiconductor nanostructures and for nanoscale refrigeration. [Figure not available: see fulltext.] © 2017 Tsinghua University Press and Springer-Verlag GmbH Germany

We demonstrate tunable bistability and a strong negative differential resistance in InAs/GaSb core-shell nanowire devices embedding a radial broken-gap heterojunction. Nanostructures have been grown using a catalyst-free synthesis on a Si substrate. Current-voltage characteristics display a top peak-to-valley ratio of 4.8 at 4.2 K and 2.2 at room temperature. The Esaki effect can be modulated - or even completely quenched - by field effect, by controlling the band bending profile along the azimuthal angle of the radial heterostructure. Hysteretic behavior is also observed in the presence of a suitable resistive load. Our results indicate that high-quality broken-gap devices can be obtained using Au-free growth.

In this work, we isolate individual wurtzite InAs nanowires and fabricate electrical contacts at both ends, exploiting the single nanostructures as building blocks to realize two different architectures of conductometric sensors: (a) the nanowire is drop-casted onto&mdash, supported by&mdash, a SiO2/Si substrate, and (b) the nanowire is suspended at approximately 250 nm from the substrate. We test the source-drain current upon changes in the concentration of humidity, ethanol, and NO2, using synthetic air as a gas carrier, moving a step forward towards mimicking operational environmental conditions. The supported architecture shows higher response in the mid humidity range (50% relative humidity), with shorter response and recovery times and lower detection limit with respect to the suspended nanowire. These experimental pieces of evidence indicate a minor role of the InAs/SiO2 contact area, hence, there is no need for suspended nanostructures to improve the sensing performance. Moreover, the sensing capability of single InAs nanowires for detection of NO2 and ethanol in the ambient atmosphere is reported and discussed.

Semiconductor nanowires featuring strong spin-orbit interactions (SOI), represent a promising platform for a broad range of novel technologies, such as spintronic applications or topological quantum computation. However, experimental studies into the nature and the orientation of the SOI vector in these wires remain limited despite being of upmost importance. Typical devices feature the nanowires placed on top of a substrate which modifies the SOI vector and spoils the intrinsic symmetries of the system. In this work, we report experimental results on suspended InAs nanowires, in which the wire symmetries are fully preserved and clearly visible in transport measurements. Using a vectorial magnet, the non-trivial evolution of weak anti-localization (WAL) is tracked through all 3D space, and both the spin-orbit length $l_{SO}$ and coherence length $l_\varphi$ are determined as a function of the magnetic field magnitude and direction. Studying the angular maps of the WAL signal, we demonstrate that the average SOI within the nanowire is isotropic and that our findings are consistent with a semiclassical quasi-1D model of WAL adapted to include the geometrical constraints of the nanostructure. Moreover, by acting on properly designed side gates, we apply an external electric field introducing an additional vectorial Rashba spin-orbit component whose strength can be controlled by external means. These results give important hints on the intrinsic nature of suspended nanowire and can be interesting for in the field of spintronics as well as for the manipulation of Majorana bound states in devices based on hybrid semiconductors., Comment: 13 pages, 11 figures

We analyze the benefits and shortcomings of a thermal control in nanoscale electronic conductors by means of the contact heating scheme. Ideally, this straightforward approach allows one to apply a known thermal bias across nanostructures directly through metallic leads, avoiding conventional substrate intermediation. We show, by using the average noise thermometry and local noise sensing technique in InAs nanowire based devices, that a nanoscale metallic constriction on a SiO2 substrate acts like a diffusive conductor with negligible electron-phonon relaxation and non-ideal leads. The non-universal impact of the leads on the achieved thermal bias -- which depends on their dimensions, shape and material composition -- is hard to minimize, but is possible to accurately calibrate in a properly designed nano-device. Our results allow to reduce the issue of the thermal bias calibration to the knowledge of the heater resistance and pave the way for accurate thermoelectric or similar measurements at the nanoscale., revised version of a submitted manuscript

We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3ω technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency ω and measuring the voltage drop across the nanostructure at frequency 3ω. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated side-gate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.

We investigate the metallic phases observed in hybrid metal-GaAs nanowire devices obtained by controlled thermal annealing of Ni/Au electrodes. Devices are fabricated onto a SiN membrane compatible with transmission electron microscopy studies. Energy dispersive X-ray spectroscopy allows us to show that the nanowire body includes two Ni-rich phases that thanks to an innovative use of electron diffraction tomography can be unambiguously identified as Ni3GaAs and Ni5As2 crystals. The mechanisms of Ni incorporation leading to the observed phenomenology are discussed.

Subwavelength nanostructured surfaces are realized with self-assembled vertically-aligned InAs nanowires, and their functionalities as optical reflectors are investigated. In our system, polarization-resolved specular reflectance displays strong modulations as a function of incident photon energy and angle. An effective-medium model allows one to rationalize the experimental findings in the long wavelength regime, whereas numerical simulations fully reproduce the experimental outcomes in the entire frequency range. The impact of the refractive index of the medium surrounding the nanostructure assembly on the reflectance was estimated. In view of the present results, sensing schemes compatible with microfluidic technologies and routes to innovative nanowire-based optical elements are discussed.

We investigate light emission from nanoscale point-sources obtained in hybrid metal-GaAs nanowires embedding two sharp axial Schottky barriers. Devices are obtained via the formation of Ni-rich metallic alloy regions in the nanostructure body thanks to a technique of controlled thermal annealing of Ni/Au electrodes. In agreement with recent findings, visible-light electroluminescence can be observed upon suitable voltage biasing of the junctions. We investigate the time-resolved emission properties of our devices and demonstrate an electrical modulation of light generation up to 1 GHz. We explore different drive configurations and discuss the intrinsic bottlenecks of the present device architecture. Our results demonstrate a novel technique for the realization of fast subwavelength light sources with possible applications in sensing and microscopy beyond the diffraction limit.

The control and measurement of local non-equilibrium configurations is of utmost importance in applications on energy harvesting, thermoelectrics and heat management in nano-electronics. This challenging task can be achieved with the help of various local probes, prominent examples including superconducting or quantum dot based tunnel junctions, classical and quantum resistors, and Raman thermography. Beyond time-averaged properties, valuable information can also be gained from spontaneous fluctuations of current (noise). From these perspective, however, a fundamental constraint is set by current conservation, which makes noise a characteristic of the whole conductor, rather than some part of it. Here we demonstrate how to remove this obstacle and pick up a local noise temperature of a current biased diffusive conductor with the help of a miniature noise probe. This approach is virtually noninvasive and extends primary local measurements towards strongly non-equilibrium regimes., Comment: minor revision, accepted in Scientific Reports

The blocking of ion transport at interfaces strongly limits the performance of electrochemical nanodevices for energy applications. The barrier is believed to arise from space-charge regions generated by mobile ions by analogy to semiconductor junctions. Here we show that something different is at play by studying ion transport in a bicrystal of yttria (9% mol) stabilized zirconia (YSZ), an emblematic oxide ion conductor. Aberration-corrected scanning transmission electron microscopy (STEM) provides structure and composition at atomic resolution, with the sensitivity to directly reveal the oxygen ion profile. We find that Y segregates to the grain boundary at Zr sites, together with a depletion of oxygen that is confined to a small length scale of around 0.5 nm. Contrary to the main thesis of the space-charge model, there exists no evidence of a long-range O vacancy depletion layer. Combining ion transport measurements across a single grain boundary by nanoscale electrochemical strain microscopy (ESM), broadband dielectric spectroscopy measurements, and density functional calculations, we show that grain-boundary-induced electronic states act as acceptors, resulting in a negatively charged core. Besides the possible effect of the modified chemical bonding, this negative charge gives rise to an additional barrier for ion transport at the grainboundary. Fil: Frechero, Marisa Alejandra. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Bahía Blanca. Instituto de Química del Sur; Argentina. Universidad Complutense de Madrid; España Fil: Rocci, M.. Universidad Complutense de Madrid; España Fil: Sanchez Santolino, G.. Universidad Complutense de Madrid; España Fil: Kumar, Amit. Oak Ridge National Laboratory. Center for Nanophase Materials Sciences; Estados Unidos Fil: Salafranca, Juan. Universidad Complutense de Madrid; España Fil: Schmidt, Rainer. Universidad Complutense de Madrid; España Fil: Diaz Guillen, M.R.. Universidad Complutense de Madrid; España Fil: Durá, O. J.. Universidad Complutense de Madrid; España Fil: RiveraCalzada, A.. Universidad Complutense de Madrid; España Fil: Mishra, R.. Vanderbilt University; Estados Unidos Fil: Jesse, Stephen. Oak Ridge National Laboratory. Center for Nanophase Materials Sciences; Estados Unidos Fil: Pantelides, S.T.. Vanderbilt University; Estados Unidos Fil: Kalinin, Sergei. Oak Ridge National Laboratory. Center for Nanophase Materials Sciences; Estados Unidos Fil: Varela, M.. Universidad Complutense de Madrid; España Fil: Pennycook, Steve. University Of Tennessee; Estados Unidos Fil: Santamaria, J.. Universidad Complutense de Madrid; España Fil: Leon, C.. Universidad Complutense de Madrid; España

The design of artificial vortex pinning landscapes is a major goal toward large scale applications of cuprate superconductors. Although disordered nanometric inclusions have shown to modify their vortex phase diagram and to produce enhancements of the critical current (MacManus-Driscoll, J. L.; Foltyn, S. R.; Jia, Q. X.; Wang, H.; Serquis, A.; Civale, L.; Maiorov, B.; Hawley, M. E.; Maley, M. P.; Peterson, D. E. Nat. Mater. 2004, 3, 439?443 and Yamada, Y.; Takahashi, K.; Kobayashi, H.; Konishi, M.; Watanabe, T.; Ibi, A.; Muroga, T.; Miyata, S.; Kato, T.; Hirayama, T.; Shiohara, Y. Appl. Phys. Lett. 2005, 87, 1-3), the effect of ordered oxide nanostructures remains essentially unexplored. This is due to the very small nanostructure size imposed by the short coherence length, and to the technological difficulties in the nanofabrication process. Yet, the novel phenomena occurring at oxide interfaces open a wide spectrum of technological opportunities to interplay with the superconductivity in cuprates. Here, we show that the unusual long-range suppression of the superconductivity occurring at the interface between manganites and cuprates affects vortex nucleation and provides a novel vortex pinning mechanism. In particular, we show evidence of commensurate pinning in YBCO films with ordered arrays of LCMO ferromagnetic nanodots. Vortex pinning results from the proximity induced reduction of the condensation energy at the vicinity of the magnetic nanodots, and yields an enhanced friction between the nanodot array and the moving vortex lattice in the liquid phase. This result shows that all-oxide ordered nanostructures constitute a powerful, new route for the artificial manipulation of vortex matter in cuprates., Work at UCM supported by grants MAT2014-52405-C02-01 and Consolider Ingenio 2010-CSD2009-00013 (Imagine), by CAM through grant CAM S2013/MIT-2740. Work done at ICMM supported by Spanish MINECO (Ministry for Economy and Competitiveness) grants MAT2011-27470-C02-02, MAT2014-52405-C02-02, and Consolider Ingenio CSD2009-00013 (Imagine). J.V. acknowledges European Research Council, ERC, grant No. 647100 “SUSPINTRONICS”.

We report on the fabrication and magnetotransport characterization of hybrid graphene-based nanodevices with epitaxial nanopatterned La_(0.7)Sr_(0.3)MnO_(3) manganite electrodes grown on SrTiO_(3)(100). The few-layer graphene was deposited onto the predefined manganite nanowires by using a mechanical transfer technique. These nanodevices exhibit resistive switching and hysteretic transport as measured by current-voltage curves. The resistance can be reversibly switched between high and low states, yielding a consistent non-volatile memory response. The effect is discussed in terms of changes in the concentration of oxygen vacancies at the space charge region of the Schottky barriers building at the contacts.

We apply noise thermometry to characterize charge and thermoelectric transport in single InAs nanowires (NWs) at a bath temperature of 4.2 K. Shot noise measurements identify elastic diffusive transport in our NWs with negligible electron-phonon interaction. This enables us to set up a measurement of the diffusion thermopower. Unlike previous approaches, we make use of a primary electronic noise thermometry to calibrate a thermal bias across the NW. In particular, this enables us to apply a contact heating scheme, which is much more efficient in creating the thermal bias as compared to conventional substrate heating. The measured thermoelectric Seebeck coefficient exhibits strong mesoscopic fluctuations in dependence on the back-gate voltage that is used to tune the NW carrier density. We analyze the transport and thermoelectric data in terms of an approximate Mott's thermopower relation and evaluate a gate-voltage to the Fermi energy conversion factor.

En este trabajo se presentan resultados de medidas de espectroscopia de impedancias realizadas en un bicristal del conductor iónico zirconia estabilizada con itria (YSZ). Utilizando electrodos de tamaño micrométrico se ha podido medir el transporte iónico a través, perpendicularmente, de una única frontera de grano, caracterizando eléctricamente las propiedades de dicha frontera. De este modo se han obtenido los parámetros microscópicos que determinan la distribución de carga en la frontera y por lo tanto el transporte iónico a través de ella, como son la barrera de potencial en la frontera DF = 0.35±0.01 V a 275 ºC, y el espesor de la zona de carga espacial l* = 5±1 Å. Estos valores son significativamente diferentes a los obtenidos anteriormente en muestras cerámicas policristalinas del mismo material, y muestran mejor acuerdo con los valores que predice el modelo de Mott-Schottky para la distribución de carga y el transporte iónico a través de la frontera de grano. Here we show impedance spectroscopy measurements on a bicrystal of the ionically conducting yttria stabilized zirconia (YSZ). By using micrometer sized electrodes it is possible to measure ionic transport perpendicular to a single grain boundary, and characterize its electrical properties. We are thus able to obtain the microscopic parameters that determine the charge distribution at the grain boundary and the ionic transport through it, as the potential energy barrier DF = 0.35±0.01 V at 275 ºC, and the space charge layer thickness l* = 5±1 Å. These values are significantly different from those previously obtained in polycrystalline ceramic samples of the same material, and show much better agreement with the values predicted by the Mott-Schottky model for the charge distribution and ionic transport through the grain boundary Fil: Frechero, Marisa Alejandra. Universidad Complutense de Madrid; España. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Bahía Blanca. Instituto de Química del Sur. Universidad Nacional del Sur. Departamento de Química. Instituto de Química del Sur; Argentina Fil: Rocci, M.. Universidad Complutense de Madrid; España Fil: Schmidt, R.. Universidad Complutense de Madrid; España Fil: Diaz Guillen, M.. Universidad Complutense de Madrid; España Fil: Dura, O.. Universidad Complutense de Madrid; España Fil: Rivera Calzada, A.. Universidad Complutense de Madrid; España Fil: Santamaria, J.. Universidad Complutense de Madrid; España Fil: Leon,C.. Universidad Complutense de Madrid; España

7 páginas, 7 figuras.-- et al., We report on the magnetic anisotropy controlled modulation of the superconductivity in La0.7 Ca0.3 MnO3/ YBa 2 Cu3O7-δ / La0.7 Ca 0.3 MnO3 ferromagnet/superconductor/ferromagnet hybrids with biaxial easy axes. The magnetoresistance (MR) is determined by the local misalignment of the magnetizations in the two layers and exhibits a positive MR plateau for antiparallel alignment along the easy axes and negative MR peaks at the coercive field near the hard axes. This evidences the importance of spin-dependent interfacial scattering effects (as opposed to stray fields) in the MR behavior of superconducting oxide inverse spin switches. © 2010 The American Physical Society., We thank A. Goldman for fruitful discussions within the framework of the joint U.S.-Spain NSF Materials World Network under Grant No. 709584. This work was supported by the U.S. Department of Energy, Basic Energy Science, under Contracts No. DE-AC02-06CH11357 and No. DEAC02NA25396, by Spanish MICINN under Grant No. MAT2008-06517, Consolider Ingenio 2010 Grant CSD2009-00013 Imagine, and “Ramon y Cajal” program, by CAM under Grant S2009/Mat-1756 Phama , and by OTKA under Grants No. F61733, No. K68807, and No. PF63954, and the “Bolyai” program of the Hungarian Academy of Sciences.

arXiv:2001.03393v2, A classical battery converts chemical energy into a persistent voltage bias that can power electronic circuits. Similarly, a phase battery is a quantum device that provides a persistent phase bias to the wave function of a quantum circuit. It represents a key element for quantum technologies based on phase coherence. Here we demonstrate a phase battery in a hybrid superconducting circuit. It consists of an n-doped InAs nanowire with unpaired-spin surface states, that is proximitized by Al superconducting leads. We find that the ferromagnetic polarization of the unpaired-spin states is efficiently converted into a persistent phase bias φ0 across the wire, leading to the anomalous Josephson effect1,2. We apply an external in-plane magnetic field and, thereby, achieve continuous tuning of φ0. Hence, we can charge and discharge the quantum phase battery. The observed symmetries of the anomalous Josephson effect in the vectorial magnetic field are in agreement with our theoretical model. Our results demonstrate how the combined action of spin–orbit coupling and exchange interaction induces a strong coupling between charge, spin and superconducting phase, able to break the phase rigidity of the system., The work of E.S. was supported by a Marie Curie Individual Fellowship (MSCA-IFEF-ST no. 660532-SuperMag). E.S., N.L. and F.G. acknowledge partial financial support from the European Union’s Seventh Framework Programme (FP7/2007-2013)/ERC grant no. 615187-COMANCHE. E.S., A.I., O.D., N.L., F.S.B. and F.G. were partially supported by the European Union’s Horizon 2020 research and innovation programme under grant agreement no. 800923 (SUPERTED). L.S. and V.Z. acknowledge partial support by the SuperTop QuantERA network and the FET Open And QC. I.V.T., C.S.F. and F.S.B. acknowledge financial support by the Spanish Ministerio de Ciencia, Innovacion y Universidades through projects no. FIS2014-55987-P, no. FIS2016-79464-P and no. FIS2017-82804-P and by the grant ‘Grupos Consolidados UPV/EHU del Gobierno Vasco (grant no. IT1249-19). A.B. thanks the CNR-CONICET cooperation programme ‘Energy conversion in quantum nanoscale hybrid devices’; the SNS-WIS joint laboratory QUANTRA, funded by the Italian Ministry of Foreign Affairs and International Cooperation; and the Royal Society through the international exchanges between the United Kingdom and Italy (grant no. IEC R2192166).

Hybrid superconductor/semiconductor devices constitute a powerful platform to investigate the emergence of new topological state of matter. Among all possible semiconductor materials, InAs represents a promising choice, owing to its high quality, large g-factor and spin-orbit component. Here, we report on InAs-based devices both in one-dimensional and two-dimensional configurations. In the former, low-temperature measurements on a suspended nanowire are presented, inspecting the intrinsic spin-orbit contribution of the system. In the latter, Josephson Junctions between two Nb contacts comprising an InAs quantum well are investigated. Supercurrent flow is reported, with Nb critical temperature up to T_c~8K. Multiple Andreev reflection signals are observed in the dissipative regime. In both systems, we show that the presence of external gates represents a useful knob, allowing for wide tunability and control of device properties, such as spin-orbit coherence length or supercurrent amplitude., 6 pages, 5 figures (Proceeding of the SPIE conference)