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Your search keyword '"Miroshnikova, I. N."' showing total 26 results
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26 results on '"Miroshnikova, I. N."'

4. Spectral characteristics and morphology of nanostructured Pb-S-O thin films synthesized via two different methods

Author

Mohamed, H. S. H., Abdel-Hafiez, M., Miroshnikov, B. N., Barinov, A. D., and Miroshnikova, I. N.

Subjects
Condensed Matter - Materials Science
Abstract

Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the obtained PbS films using various techniques i.e.AFM, SEM, EDAX, AES and HRTEM . In the case of CVD, we found that the surface consists of grains with dimensions in the plane (diameter to 300 nm and height up to 200 nm), while the same order of the grain size has been observed for PVD. On the other hand, SEM investigation reveals that the PbS particles with various morphologies of both films have uniform and the particle size distribution. Small amount of Sodium was obtained from EDXS studies, which is may originate from the substrate where the deposition process has been produced at temperature 550-600 deg. and for CVD at minimum accelerating voltage 5kV silicon are presented in the spectrum, which means that the region for X-ray generation voltage data exceeds the thickness of the films (where the thickness of films about 0.4 micron). AES confirm that the surface layer of these films (PVD) containing carbon and oxygen and it has a thickness of 0.1micron. At a depth of 1.3 microns in films these elements is again increased, which corresponds to the film thickness of 1.5 micron. Layers of PVD films are seen by HRTEM and the studies confirm that oxygen-layer located on top of the structure, while the layers of CVD films have not only the oxygen along the crystallite boundaries, but also accumulate in the depth of the boundary with the substrate. Our results of morphology indicate that changing in spectral characteristics of films deposited by (CVD and PVD) is related to the structure and crystalline size., Comment: 6 pages, 6 figures

Published
2014
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15. System of localized excitons on oxygen complexes in CdS

Author

null Miroshnikova I. N. and null Morozova N. K.

Abstract

Intense CdS luminescence in the blue and green spectral regions is widely used in all areas of optoelectronics. In this spectrum band are working on lasers CdS. This paper presents the results of a study of the exciton region of the CdS spectrum based on the theory of anti-intersecting bands (bands anticrossing theory-BAC) with the involvement of broader initial data for the analysis of optical properties. Depending on the growth conditions, the presence and change of oxygen concentration and intrinsic point defects determining the composition of crystals are taken into account. The concept of the nonuniform distribution of isoelectronic oxygen centers in the bulk of CdS due to their predominant segregation on compensating stacking faults is introduced. Cathodoluminescence (CL) spectra were studied using various recording methods, excitation intensity and temperature, as well as pulsed CL at high excitation intensities. In a scanning electron microscope from local registration and a high excitation density, the emission of the edge luminescence components of CdS was detected at 300 K. To analyze the optical data, we used the capabilities of the method for constructing band models based on the BAC theory, which collects extensive and multilateral information about specific samples. A model of a CdS · O multizone with stacking faults, which determines the spectrum of edge emission is presented. An explanation of the nature of the green edge emission of cadmium sulfide as excitons localized on oxygen-containing complexes in SF layers has been obtained for the first time. It was found that the system of levels of localized excitons at stacking faults does not change either with temperature up to 300 K, or with a change in the oxygen solubility in the crystal to the limiting one. It is shown that the presence of isoelectronic oxygen centers appear itself in the electro-physical properties of crystals. Recommendations are given for the diagnostics of crystals suitable for the creation of luminescent systems or lasers that are stable in operation. Keywords: isoelectronic centers, bands anticrossing theory, localized exciton, stacking faults, point defects, stimulated radiation.

Published
2022
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21. Annealing effect on temperature stability and mechanical stress at the “CdxPb1−xS film — substrate” interface

Author

Maskaeva, L. N., Kutyavina, A. D., Pozdin, A. V., Miroshnikov, B. N., Miroshnikova, I. N., Markov, V. F., Maskaeva, L. N., Kutyavina, A. D., Pozdin, A. V., Miroshnikov, B. N., Miroshnikova, I. N., and Markov, V. F.

Abstract

The article establishes the upper temperature steadiness limit of СdxPb1‑xS supersaturated solid solutions obtained by chemical bath deposition. СdxPb1‑xS (x = 0.06; 0.122; 0.176) and (x = 0.02–0.05) films remained stable under the heating up to 405– 410 and 450 K, respectively. SEM studies have shown that heating of СdxPb1‑xS films (x = 0.02–0.05) to 620 K leads to the structure destruction. Internal mechanical compressive stresses at the “СdxPb1‑xS film-substrate” interface was calculated in the range of 300–900 K for the first time ever, the highest values reached 2000–2750 kN/m2 for a number of the films compositions. In contrast to solid solutions, the expansion stresses up to 100 kN/m2 were derived for the CdS layer at 900 K. The obtained temperature steadiness boundaries and the mechanical stresses of СdxPb1‑xS films must be taken into account in the development of photonic devices based on such materials.

Published
2020

25. Analysis of Carbon and Carbon-Containing Materials by X-Ray Photoelectron Spectroscopy.

Author

Afanas'ev, V. P., Popov, A. I., Barinov, A. D., Bodisko, Yu. N., Bocharov, G. S., Gryazev, A. S., Eletskii, A. V., Kaplya, P. S., Miroshnikova, I. N., and Ridzel', O. Yu.

Subjects
X-ray photoelectron spectroscopy, CARBON analysis, ENERGY dissipation, PHOTOELECTRON spectroscopy, GRAPHENE oxide, DIAMOND crystals
Abstract

The results of the analysis of carbon-containing materials are presented based on an analysis of the peaks of X-ray photoelectron spectroscopy (XPS) formed by the electrons leaving the analyzed sample in a vacuum without energy loss (peak shape analysis, PSA) and based on the interpretation of the widest possible area of energy loss adjacent to the photoelectron spectroscopy (PES) peak. It is shown that the PES analysis of diamond-like materials containing alloying additives, the concentration of which is comparable with the concentration of carbon, is not effective. The PES analysis of graphene oxide samples that were heat-treated to remove oxygen gave detailed information about the laws of the energy loss of photoelectrons emitted from the 1s level, which determines the allotropic variety of carbon. [ABSTRACT FROM AUTHOR]

Published
2020
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