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The IR response of a backside illuminated type Yttrium Barium Copper Oxide (YBCO) transition-edge bolometer (TEB) in a free-membrane configuration is measured and analyzed. The analysis is based on a comprehensive equivalent circuit model for the bolometer structure considering all the thermal parameters of the device. The detector is made using a 450nm superconductive YBCO thin film grown on about 100 um thick crystalline SrTiO3 (STO) substrate using an optimized low cost Metal Organic Deposition (MOD) technique. The backside illuminated structure provided a basis for freely utilizing different IR absorber materials and structures on the backside of the bolometer in order to get wide band high radiation absorption coefficient for the device, while also avoiding any negative effect of the deposition of the absorber layer on the YBCO thin film properties. The obtained analytical and experimental results for the backside illuminated bolometer were also compared with the results of the previously reported front-side illuminated bolometers.

A high temperature superconducting detector was fabricated to capture the thermal images in room temperature background. The detector was made of YBa2Cu3O7-{\delta} (YBCO) superconducting thin film deposited on an Yttria Stabilized Zirconia (YSZ) substrate, structurally modified for high responsivity performance. A very thin absorber layer was implemented on the backside of the detector to increase the absorption of the device at infrared (IR) range of frequencies. To capture thermal images, a movable off-axis parabolic mirror on XY plane was used for focusing the incoming IR radiation including the thermal signal of the objects onto the device surface. The captured thermal images belong to the objects within the temperature range between 300K and 400K, which correspond to our imaging optics., Comment: Will be submitted in "superconductor science and technology" journal

In this article, two wide band high-efficiency metasurface structures as a linear-cross polarizer in transmission mode based on asymmetric split-ring resonators (ASRR) are proposed and tested to indicate that this is not a purely theoretical work. A unit cell of the first structure consists of double polarization-sensitive S-shape resonators (SRs) on the bottom side of the dielectric layer. The superiority of this proposed structure is its filtering property and high conversion efficiency at its resonant frequency, 100 GHz, where its cross-polarized transmission coefficient reaches 0.87. The simulation results show that the polarization conversion ratio (PCR) exceeds 85% in the frequency range of 86 to 139 GHz. Additionally, the second structure consistsed of a wire-grid array as the bottom layer. This structure has extremely low co-polarized transmission amplitude which represents a good polarization transformer in cross-direction. Furthermore, this structure has a polarization conversion ration more than 95% in frequency range of 50 to 200GHz, having wider relative bandwidth compared to the first proposed polarizer. The performance of both polarizers has very weak angular dependence under the oblique incident of x-polarized EM wave with from to .A prototype of these proposed polarizers has been fabricated and a good agreement between experimental and simulation results has been observed. These proposed structures can find application in mm-wave and THz sensing and imaging systems which benefit from polarimetric measurements.

We have developed a new method for fabrication of ultra-low noise silver-silver chloride (Ag-AgCl) reference electrode with dramatically high stability, useful in biomedical precise measurements. Low noise level and high stability are the most important features when evaluating reference electrode for example when used as a half-cell at electrochemical cells. The noise was measured for bare Ag-AgCl electrode pairs in a saline electrolyte without any junction. The noise spectral density for such measurements increases at low frequencies due to flicker (1/f) noise. Thermal noise from the real part of the electrode impedance is always lower than 1/f noise and is shown as offset voltage in noise spectrum. Electrode noise is highly correlated to its offset voltage. Moreover, the variance of the potential difference in our measurements is correlated to the noise level of electrodes. In this paper, offset voltage spectrum and the variance of data while doing measurements are proposed for identification of noise in our electrodes. The results presented suggest a new process for fabrication of electrode pairs with differential noise potential of 16 nanovolt root mean square at frequency of 1 Hz., Comment: 6 pages, 12 figures, Journal paper, Once submitted to Sensors Journal with ID#: Sensors-25066-2019