1,042 results on '"Mishra, Umesh K."'
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2. Compliant Micron-Sized Patterned InGaN Pseudo-Substrates Utilizing Porous GaN
3. Demonstration of HCl-Based Selective Wet Etching for N-Polar GaN with 42:1 Selectivity to Al0.24Ga0.76N
4. Chemical abscess post vein of Galen aneurysmal malformation embolisation with ethylene vinyl alcohol copolymer
5. Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs
6. First Demonstration of an N-Polar InAlGaN/GaN HEMT
7. An expeditious synthesis of novel DNA nucleobase mimics of (+)-anisomycin
8. Effects of surface oxidation on the pH-dependent surface charge of oxidized aluminum gallium nitride
9. N-Polar Deep Recess GaN HEMT With a TiN Schottky Gate Contact Demonstrating 53.4% PAE and 3.7 W/mm Associated P$_{\mathrm{out}}$ at 94 GHz
10. N-Polar GaN MISHEMT With Bias-Insensitive Linearity at 30 GHz
11. pH-Dependent surface charge at the interfaces between aluminum gallium nitride (AlGaN) and aqueous solution revealed by surfactant adsorption
12. A glycal based approach to the synthesis of (+)-bulgecinine, 3-hydroxy-2,5-dihydroxymethylpyrrolidine and 2-oxapyrrolizidin-3-one
13. N‐polar deep‐recess GaN MISHEMT with enhanced ft·LG by gate dielectric thinning.
14. pH-dependent surface properties of the gallium nitride – Solution interface mapped by surfactant adsorption
15. Optimization of Digital Growth of Thick N-Polar InGaN by MOCVD
16. Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
17. Record 1 W output power from a single N-Polar GaN MISHEMT at 94 GHz
18. First Comparison of Active and Passive Load Pull at W-Band
19. First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz
20. Lateral GaN Devices for Power Applications (from kHz to GHz)
21. Growth of N-polar GaN by ammonia molecular beam epitaxy
22. Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys
23. Deformation potential scattering from dislocations in III-V nitride quantum wells
24. Electron transport and intrinsic mobility limits in two-dimensional electron gases of III-V nitride heterostructures
25. Ca2+ detection utilising AlGaN/GaN transistors with ion-selective polymer membranes
26. Dipole scattering in polarization induced two-dimensional electron gases
27. Dislocation scattering in a two-dimensional electron gas
28. Properties of In-Doped ZnO Films Grown by Metalorganic Chemical Vapor Deposition on GaN(0001) Templates
29. N-Polar Indium Nitride Quantum Dashes and Quantum Wire-like Structures: MOCVD Growth and Characterization
30. Gallium Nitride Versus Silicon Carbide: Beyond the Switching Power Supply [Industry View]
31. What Will Win the Wide-Bandgap Wars?
32. Record RF Power Performance at 94 GHz From Millimeter-Wave N-Polar GaN-on-Sapphire Deep-Recess HEMTs
33. Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
34. Exploring metalorganic chemical vapor deposition of Si-alloyed Al2O3 dielectrics using disilane
35. Growth of high purity N-polar (In,Ga)N films
36. Impact of CF4 plasma treatment on GaN
37. N-polar GaN/AlGaN/GaN high electron mobility transistors
38. N-polar III-nitride transistors
39. A GaN Differential Oscillator With Improved Harmonic Performance
40. Influence of Epitaxial Structure in the Noise Figure of AlGaN/GaN HEMTs
41. Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands
42. GaN/AlGaN Superlattice Based E-Mode Hole Channel FinFET With Schottky Gate
43. Improved wall-plug efficiency of III-nitride tunnel junction micro-light-emitting diodes with AlGaN/GaN polarization charges
44. Field Effect Transistors
45. Field Effect Transistors: MOSFET
46. Temporal Response Of Diodes and Bipolar Transistors
47. Bipolar Junction Transistors
48. Junctions in Semiconductors: P-N Diodes
49. Semiconductor Junctions
50. Charge transport in materials
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