149 results on '"Mitsuhashi, R."'
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2. EP02.12: A new strategy for evaluation of fetal breathing movements
3. Risk of female athlete triad development in Japanese collegiate athletes is related to sport type and competitive level
4. Achieving low-VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
5. Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors
6. Anion—cation versus weak intermolecular interactions in the structures of Et4N+, Pr4N+, and Bu4N+ cation salts with the [W(CN)6(bpy)]2– anion
7. EP01.33: Examination of fetal breathing movements following magnesium sulphate treatment to the mother using artificial intelligence.
8. PVD-HfSiON gate dielectrics with Ni-FUSI electrode for 65nm LSTP application
9. 45nm LSTP FET with FUSI Gate on PVD-HfO2 with excellent drivability by advanced PDA treatment
10. Comparison of thermal and plasma oxidations for HfO 2/Si interface
11. Results of Vibrational and Thermal Test for MOLI Laser Transmitter
12. Two-Dimensional Mixed-Metal Complexes Composed of Mixed-Valent Dinuclear Ruthenium(II,III) Carboxylate and Tetracyanidopalladate(II) Units
13. Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes.
14. Reliability study of [La.sub.2][O.sub.3] capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
15. Magnetic Material Based on Mixed-Valent Dinuclear Pivalate and Cyanidometalate
16. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
17. Gate Leakage Advantage of LaO Incorporation for Vt Tuning in High-k nMOSFETs over Metal Gate WF Control
18. Hyperspectral sensor HSC3000 for nano-satellite TAIKI
19. Defect Profiling and the Role of Nitrogen in Lanthanum Oxide-capped High-κ Dielectrics for nMOS Applications
20. Reliability study of La2O3 capped HfSiON high-permittivity n-type metal-oxide-semiconductor field-effect transistor devices with tantalum-rich electrodes
21. Strain enhanced low-VT CMOS featuring La/Al-doped HfSiO/TaC and 10ps invertor delay
22. Cost-Effective Low $V_{t}$ Ni-FUSI CMOS on SiON by Means of Al Implant (pMOS) and $\hbox{Yb}{+}\hbox{P}$ Coimplant (nMOS)
23. Low VT CMOS using doped Hf-based oxides, TaC-based Metals and Laser-only Anneal
24. Demonstration of Metal-Gated Low $V_{t}$ n-MOSFETs Using a Poly-$\hbox{Si/TaN/Dy}_{2}\hbox{O}_{3}/\hbox{SiON}$Gate Stack With a Scaled EOT Value
25. Achieving 9ps unloaded ring oscillator delay in FuSI/HfSiON with 0.8 nm EOT
26. Strain enhanced FUSI/HfSiON Technology with optimized CMOS Process Window
27. Low Vt Ni-FUSI CMOS Technology using a DyO cap layer with either single or dual Ni-phases
28. Nitrogen Profile and Dielectric Cap Layer (Al2O3, Dy2O3, La2O3) Engineering on Hf-Silicate
29. Optimization of HfSiON using a design of experiment (DOE) approach on 0.45V Vt Ni-FUSI CMOS transistors
30. A Dy2O3-capped HfO2 Dielectric and TaCx-based Metals Enabling Low-Vt Single-Metal-Single-Dielectric Gate Stack
31. Oxygen-Vacancy-Induced Vt shift in La-containing Devices
32. Achieving low VT Ni-FUSI CMOS via lanthanide incorporation in the gate stack
33. Ni-based FUSI gates: CMOS Integration for 45nm node and beyond
34. Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
35. 65nm-node Low-Standby-Power FETs with HfAlOx Gate Dielectric
36. Comparison of thermal and plasma oxidations for HfO2/Si interface
37. Study of defects in MOS structures using HfAlOx gate dielectric by means of positron annihilation
38. In-situ HfSiON/SiO2 gate dielectric fabrication using hot wall batch system
39. Effects of Hf sources, oxidizing agents, and NH3 radicals on properties of HfAlOx films prepared by atomic layer deposition
40. A HfAlOx Gate Dielectric FET Technology Compatible with a Conventional Poly-Si Gate CMOS Process
41. Improvement in thermal stability of the interfacial layer for poly Si/HfAlOx gate stacks
42. Thermal Instability of Poly-Si Gate Al2O3 MOSFETs
43. A study on the V/sub th/ shift of HfAlOx MISFETs with n+/p+ poly-Si and TiN gate electrodes fabricated by replacement gate process
44. Attitude estimation of nano-satellite “HIT-SAT” using received power fluctuation by radiation pattern.
45. Auger electron spectroscopy and ion scattering spectroscopy studies of altered layer formation in AlN thin film prepared by post-irradiation with N2+ ions
46. EP33.05: Visualisation of assessments of explainable AI: determination of difference between the upper arm and thigh in fetal ultrasound using Grad‐CAM.
47. Time-dependent dielectric breakdown of HfAlOx/SiON gate dielectric.
48. Enrichment of Al in the topmost surface of AlN crystalline film prepared by post‐irradiation
49. Development of an avatar language chatting system and its communication experiment using a Japanese communications satellite
50. RHEED-ISS study on the surface at high temperature
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