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We investigated photon-helicity-induced magnetization precession in Co$_{1-x}$Pt$_{x}$ alloy thin films. In addition to field-like torque, attributable to magnetic field generation owing to {\it the inverse Faraday effect}, we observed non-trivial and large damping-like torque which has never been discussed for single ferromagnetic layer. The composition dependence of those two torques is effectively elucidated by a model that considers mutual coupling via spin-orbit interaction between magnetization and the electronic orbital angular momentum generated by photon-helicity. This work significantly enhances our understanding of the physics relevant to the interplay of photon-helicity and magnetization in magnetic metals., Comment: 6 pages, 4 figures

Recently, helicity-dependent photocurrent was reported in Bi single thin fi lms. It is proposed that the origin of this photocurrent is the combination of photo-spin conversion and spin-charge conversion effects in Bi and efficient spin conversion in Bi is expected. In this study, we measured two types of terahertz (THz) emissions from Bi/Co bilayer films induced by spin current generation using laser-induced demagnetization of the Co layer and photo-spin conversion effect in the Bi layer to investigate the spin current induced by the two mechanisms simultaneously. We clearly observed diff erent Bi thickness dependence of peak intensity and that of bandwidth for THz spin current in two experiments, i.e., spin current induced by demagnetization of Co and that by photo-spin conversion in Bi. The different Bi thickness dependence of spin current intensity and bandwidth in two experiments is caused by different spin relaxation properties of optically excited spin currents in Bi layers., Comment: 13 pages, 11 figures

Neuromorphic computing using spin waves is promising for high-speed nanoscale devices, but the realization of high performance has not yet been achieved. Here we show, using micromagnetic simulations and simplified theory with response functions, that spin-wave physical reservoir computing can achieve miniaturization down to nanoscales keeping high computational power comparable with other state-of-art systems. We also show the scaling of system sizes with the propagation speed of spin waves plays a key role to achieve high performance at nanoscales., Comment: 50 pages, 12 figures

The magnetic atom diffusion at the interface between CoMn alloy and MnGa layer with annealing is studied using x-ray magnetic circular dichroism (XMCD) analysis. We found that the spins in bcc CoMn are coupled parallel to those in perpendicularly magnetized MnGa layer under the as-grown conditions, while the post-annealing modulates the interfacial magnetic coupling to antiferromagnetic in Co. The element-specific hysteresis curves at each absorption edge revealed the large coercive fields in Mn and Co through the exchange coupling with MnGa. After the annealing process, the changes of XMCD spectral line shapes are related to the interfacial reactions promoting the formation of Mn and Co2MnGa layers, which is deduced from the analysis of transmission electron microscopy. The interfacial diffusion of Mn atoms modulates the magnetic exchange coupling between Mn and Co sites and reverses the direction of perpendicular magnetization., Comment: 12 pages including 3 figures

THz-spectroscopy is an attractive imaging tool for scientific research, especially in life science, offering non-destructive interaction with matter due to its low photon energies. However, wavelengths above $100{\mu}m$ principally limit its spatial resolution in the far-field by diffraction to this regime, making it not sufficient to image biological cells in the micrometer scale. Therefore, super-resolution imaging techniques are required to overcome this restriction. Near-field-imaging using spintronic emitters offers the most feasible approach because of its simplicity and potential for wide-ranging applications. In our study, we investigate THz-radiation generated by fs-laser-pulses in CoFeB/Pt heterostructures, based on spin currents, detected by commercial LT-GaAs Auston switches. The spatial resolution is evaluated applying a 2D scanning technique with motorized stages allowing scanning steps in the sub-micrometer range. By applying near-field imaging we can increase the spatial resolution to the dimensions of the laser spot size in the micrometer scale. For this purpose, the spintronic emitter is directly evaporated on a gold test pattern separated by a 300 nm spacer layer. Moving these structures with respect to the femtosecond laser spot which generates the THz radiation allows for resolution determination using the knife-edge method. We observe a full-width half-maximum THz beam diameter of $4.9(4){\mu}$m at 1 THz. The possibility to deposit spintronic emitter heterostructures on simple glass substrates makes them an interesting candidate for near-field imaging for a large number of applications., Comment: 10 pages, 4 figures

A magnetic Weyl semimetal is a recent focus of extensive research as it may exhibit large and robust transport phenomena associated with topologically protected Weyl points in momentum space. Since a magnetic texture provides a handle for the configuration of the Weyl points and its transport response, understanding of magnetic dynamics should form a basis of future control of a topological magnet. Mn3Sn is an example of an antiferromagnetic Weyl semimetal that exhibits a large response comparable to the one observed in ferromagnets despite a vanishingly small magnetization. The non-collinear spin order in Mn3Sn can be viewed as a ferroic order of cluster magnetic octupole and breaks the time-reversal symmetry, stabilizing Weyl points and the significantly enhanced Berry curvature near the Fermi energy. Here we report our first observation of time-resolved octupole oscillation in Mn3Sn. In particular, we find the giant effective damping of the octupole dynamics, and it is feasible to conduct an ultrafast switching at < 10 ps, a hundred times faster than the case of spin-magnetization in a ferromagnet. Moreover, high domain wall velocity over 10 km/s is theoretically predicted. Our work paves the path towards realizing ultrafast electronic devices using the topological antiferromagnet.

In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigated the degree of crystallisation in MTJ consisting of CoxMn100-x/MgO/CoxMn100-x (x = 66, 75, 83 and 86) in relation to their TMR ratios. Cross-sectional high resolution transmission electron microscopy (HRTEM) reveals that almost consistent lattice constants of these layers for 66 < x < 83 with maintaining large TMR ratios of 229% at RT, confirming the soft nature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25 interfaces. For x = 86, on the other hand, the TMR ratio is found to be reduced to 142% at RT, which is partially attributed to the increased number of the dislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified in the MgO barrier. Ab-initio calculations confirm the crystalline deformation stability across a broad compositional range in CoMn, proving the advantage of a strain-free interface for much larger TMR ratios.

MgO-barrier magnetic tunnel junctions with half-metallic Heusler alloy electrodes attracted much attentions for spintronics applications. However, a couples of issues related to materials still remain to be resolved for practical uses. Recently, quarterly equiatomic Heusler alloys attracted attentions as advanced Heusler alloys. CoIrMnZ (Z = Al, Si, Ga, and Ge) half-metallic Heusler alloys were designed and predicted to have moderate Curie temperatures and to be a lattice-matched with the MgO barrier, being advantageous to traditional Co2 Heusler alloys [T. Roy et al., J. Magn. Magn. Mater. 498, 166092 (2020)]. Here we experimentally investigated structure and magnetic properties for thin films of one of those alloys, CoIrMnAl with a sputtering deposition. We successfully obtained the films with the B2 chemical ordering even with no post-annealing process. The lattice constant for the films annealed at 500-600$^\circ$C approximates the predicted values. The magnetization at 10 K was near 500 kA/m and the Curie temperature was approximately 400 K were observed, which were about 70% of the values predicted for the fully ordered structure. The magnetic properties observed in those B2 ordered films were well explained by ferrimagnetism appeared in B2 ordered CoIrMnAl with full-swap disorders of Co-Ir and Mn-Al and almost full-swap disorder of Co-Mn, predicted from the first-principles calculations., Comment: 20 pages, 7 figures

Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the $x$ = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effect in MgO(001)-barrier MTJs with electrodes comprising those bcc films. The single phase bcc Co$_{1-x}$Mn$_x$(001) films were pseudomorphically grown on Cr(001) for 0.14 < $x$ < 0.50 with a sputtering technique. The magnetization was larger than that of pure Co for $x$ = 0.14-0.25 and deceased with further increasing $x$. This behavior mainly stemmed from the composition dependence of magnetic moment of Mn that exceeded 2 $\mu _B$ at the maximum, unveiled by X-ray magnetic circular dichroism. Correspondingly, within the range of 0.25 < $x$ < 0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K) as $x$ increased. We discussed the relationship between the magnetism and high TMR ratio with different $x$ with the aid of the ab-initio band structure calculations., Comment: 21 pages, 10 figures

The manipulation of magnetization in a metallic ferromagnet by using optical helicity has been much attracted attention for future opto-spintronic devices. The optical helicity induced torques on the magnetization, {\it optical spin torque}, have been observed in ferromagnetic thin films recently. However, the interfacial effect of the optical spin torque in ferromagnet/nonmagnetic heavy metal heterostructures have not been addressed so far, which are widely utilized to efficiently control magnetization via electrical means. Here, we studied optical spin torque vectors in the ferromagnet/nonmagnetic heavy metal heterostructures and observed that in-plane field-like optical spin torque was significantly increased with decreasing ferromagnetic layer thicknesses. The interfacial field-like optical spin torque was explained by the optical Rashba-Edelstein effect caused by the structural inversion symmetry breaking. This work will aid in the efficient optical manipulation of thin film nanomagnets using optical helicity., Comment: 13 pages, 4 figures, Supplemental material

Mn-based alloys exhibit unique properties in the spintronics materials possessing perpendicular magnetic anisotropy (PMA) beyond the Fe and Co-based alloys. It is desired to figure out the quantum physics of PMA inherent to Mn-based alloys, which have never been reported. Here, the origin of PMA in ferrimagnetic Mn$_{3-{\delta}}$Ga ordered alloys is investigated to resolve antiparallel-coupled Mn sites using x-ray magnetic circular and linear dichroism (XMCD/XMLD) and a first-principles calculation. We found that the contribution of orbital magnetic moments in PMA is small from XMCD and that the finite quadrupole-like orbital distortion through spin-flipped electron hopping is dominant from XMLD and theoretical calculations. These findings suggest that the spin-flipped orbital quadrupole formations originate from the PMA in Mn$_{3-{\delta}}$Ga and bring the paradigm shift in the researches of PMA materials using x-ray magnetic spectroscopies., Comment: 20 pages including 4 figures

The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlapping with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed.

We present a consistent microscopic study of spin pumping effects for both metallic and insulating ferromagnets. As for metallic case, we present a simple quantum mechanical picture of the effect as due to the electron spin flip as a result of a nonadiabatic (off-diagonal) spin gauge field. The effect of interface spin-orbit interaction is briefly discussed. We also carry out field-theoretic calculation to discuss on the equal footing the spin current generation and torque effects such as enhanced Gilbert damping constant and shift of precession frequency both in metallic and insulating cases. For thick ferromagnetic metal, our study reproduces results of previous theories such as the correspondence between the dc component of the spin current and enhancement of the damping. For thin metal and insulator, the relation turns out to be modified. For the insulating case, driven locally by interface $sd$ exchange interaction due to magnetic proximity effect, physical mechanism is distinct from the metallic case. Further study of proximity effect and interface spin-orbit interaction would be crucial to interpret experimental results in particular for insulators.

The Technical Committee of the IEEE Magnetics Society has selected 7 research topics to develop their roadmaps, where major developments should be listed alongside expected timelines; (i) hard disk drives, (ii) magnetic random access memories, (iii) domain-wall devices, (iv) permanent magnets, (v) sensors and actuators, (vi) magnetic materials and (vii) organic devices. Among them, magnetic materials for spintronic devices have been surveyed as the first exercise. In this roadmap exercise, we have targeted magnetic tunnel and spin-valve junctions as spintronic devices. These can be used for example as a cell for a magnetic random access memory and spin-torque oscillator in their vertical form as well as a spin transistor and a spin Hall device in their lateral form. In these devices, the critical role of magnetic materials is to inject spin-polarised electrons efficiently into a non-magnet. We have accordingly identified 2 key properties to be achieved by developing new magnetic materials for future spintronic devices: (1) Half-metallicity at room temperature (RT); (2) Perpendicular anisotropy in nano-scale devices at RT. For the first property, 5 major magnetic materials are selected for their evaluation for future magnetic/spintronic device applications: Heusler alloys, ferrites, rutiles, perovskites and dilute magnetic semiconductors. These alloys have been reported or predicted to be half-metallic ferromagnets at RT. They possess a bandgap at the Fermi level EF only for its minority spins, achieving 100% spin polarisation at EF. We have also evaluated L10-alloys and D022-Mn-alloys for the development of a perpendicularly anisotropic ferromagnet with large spin polarisation. We have listed several key milestones for each material on their functionality improvements, property achievements, device implementations and interdisciplinary applications within 35 years time scale., Comment: Open Access, 11 pages, 11 figures, advance online publication IEEE Transactions on Magnetics

Using circularly polarised radiation and a combination of bulk-sensitive hard X-ray photoelectron spectroscopy and X-ray-absorption spectroscopy (XAS) we studied the electronic and magnetic structure of epitaxial Mn$_{1.8}$Co$_{1.2}$Ga thin films. Spin resolved Bloch spectral functions, density of states as well as charge and magnetisation densities were investigated by a first-principles analysis of full potential, fully relativistic Korringa--Kohn--Rostoker calculations of the electronic structure. The valence states were experimentally investigated by using linear dichroism in the angular distribution and comparing the results to spin-resolved densities of states. The linear dichroism in the valence band enabled a symmetry analysis of the contributing states. The spectra were in good agreement with the theoretical partial density of states. The element-specific, spin-resolved, unoccupied densities of states for Co and Mn were analysed by using XAS and X-ray magnetic circular dichroism (XMCD) at the $L_{3,2}$ edges. The spectra were influenced by strong correlation effects. XMCD was used to extract the site resolved magnetic moments. The experimental values of $m_{\rm Mn}=0.7\:\mu_B$ and $m_{\rm Co}=1.05\:\mu_B$ agree very well with the calculated magnetic moments. Magnetic circular dichroism in angle-resolved photoelectron spectroscopy at the Mn and Co $2p$ core level exhibited a pronounced magnetic dichroism and confirmed the localised character of the Mn $d$ valence states.

The static and dynamic magnetic properties of tetragonally distorted Mn--Ga based alloys were investigated. Static properties are determined in magnetic fields up to 6.5~T using SQUID magnetometry. For the pure Mn$_{1.6}$Ga film, the saturation magnetisation is 0.36~MA/m and the coercivity is 0.29~T. Partial substitution of Mn by Co results in Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$. The saturation magnetisation of those films drops to 0.2~MA/m and the coercivity is increased to 1~T. Time-resolved magneto-optical Kerr effect (TR-MOKE) is used to probe the high-frequency dynamics of Mn--Ga. The ferromagnetic resonance frequency extrapolated to zero-field is found to be 125~GHz with a Gilbert damping, $\alpha$, of 0.019. The anisotropy field is determined from both SQUID and TR-MOKE to be 4.5~T, corresponding to an effective anisotropy density of 0.81~MJ/m$^3$. Given the large anisotropy field of the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film, pulsed magnetic fields up to 60~T are used to determine the field strength required to saturate the film in the plane. For this, the extraordinary Hall effect was employed as a probe of the local magnetisation. By integrating the reconstructed in--plane magnetisation curve, the effective anisotropy energy density for Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ is determined to be 1.23~MJ/m$^3$., Comment: J. Phys. D (accepted)

The composition dependence of the structural, magnetic, and transport properties of epitaxially grown Mn-Co-Ga films were investigated. The crystal structure was observed to change from tetragonal to cubic as the Co content was increased. In terms of the dependence of saturation magnetization on the Co content, relatively small value was obtained for the Mn$_{2.3}$Co$_{0.4}$Ga$_{1.3}$ film at a large {\it K}$_\textrm u$ value of 9.2 Merg/cm$^3$. Electrical resistivity of Mn-Co-Ga films was larger than that of pure Mn-Ga film. The maximum value of the resistivity was 490 $\mu\Omega$cm for Mn$_{2.2}$Co$_{0.6}$Ga$_{1.2}$ film. The high resistivity of Mn-Co-Ga might be due to the presence of localized electron states in the films due to chemical disordering caused by the Co substitution., Comment: 3 pages, 5 figures. The article has been submitted to the Journal of Applied Physics as a Proceedings for the 12th Joint MMM/INTERMAG conference

Mn$_{3-x}$Co$_{x}$Ga epitaxial thin films were grown on MgO substrates by magnetron co-sputtering. Structures were tetragonal or cubic depending on Co content. Composition dependence of saturation magnetization and uniaxial magnetic anisotropy $K_u$ of the films were investigated. A high $K_u$ (1.2 MJ m$^{-3}$) was achieved for the Mn$_{2.6}$Co$_{0.3}$Ga$_{1.1}$ film with the magnetic moment 0.84$\mu_B$. Valence band spectra were obtained by hard X-ray photoelectron spectroscopy. Sharp peaks in the cubic case, which were absent in the tetragonal case, prove that a van Hove singularity causes a band Jahn-Teller effect with tetragonal distortion. Observations agree well with the first-principles calculations.