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A quantum-light source that delivers photons with a high brightness and a high degree of entanglement is fundamental for the development of efficient entanglement-based quantum-key distribution systems. Among all possible candidates, epitaxial quantum dots are currently emerging as one of the brightest sources of highly entangled photons. However, the optimization of both brightness and entanglement currently requires different technologies that are difficult to combine in a scalable manner. In this work, we overcome this challenge by developing a novel device consisting of a quantum dot embedded in a circular Bragg resonator, in turn, integrated onto a micromachined piezoelectric actuator. The resonator engineers the light-matter interaction to empower extraction efficiencies up to 0.69(4). Simultaneously, the actuator manipulates strain fields that tune the quantum dot for the generation of entangled photons with corrected fidelities to a maximally entangled state up to 0.96(1). This hybrid technology has the potential to overcome the limitations of the key rates that plague QD-based entangled sources for entanglement-based quantum key distribution and entanglement-based quantum networks.

The quantification of the entanglement present in a physical system is of para\-mount importance for fundamental research and many cutting-edge applications. Currently, achieving this goal requires either a priori knowledge on the system or very demanding experimental procedures such as full state tomography or collective measurements. Here, we demonstrate that by employing neural networks we can quantify the degree of entanglement without needing to know the full description of the quantum state. Our method allows for direct quantification of the quantum correlations using an incomplete set of local measurements. Despite using undersampled measurements, we achieve a quantification error of up to an order of magnitude lower than the state-of-the-art quantum tomography. Furthermore, we achieve this result employing networks trained using exclusively simulated data. Finally, we derive a method based on a convolutional network input that can accept data from various measurement scenarios and perform, to some extent, independently of the measurement device., Comment: 10 pages, 5 figures, 1 table

The generation of photon pairs in single quantum dots is based on a process that is, in its nature, deterministic. However, an efficient extraction of these photon pairs from a high-index semiconductor host material requires engineering of the photonic environment. We report on a micropillar-based device featuring an extraction efficiency of 69.4(10)$\%$ that is achieved by harnessing a broadband operation suitable for extraction of photon pairs emitted from a single quantum dot. Opposing the approaches that rely solely on Purcell enhancement to realize the enhancement of the extraction efficiency, our solution exploits a suppression of the emission into the modes other than the cavity mode. Our technological implementation requires modest fabrication effort enabling higher device yields that can be scaled up to meet the growing needs of quantum technologies. Furthermore, the design of the device can be further optimized to allow for an extraction efficiency of 85$\%$.

In this paper, we introduce a novel quantum photonic device, which we term photonic Bier-Glass cavity. We discuss its fabrication and functionality, which is based on the coupling of integrated In(Ga)As quantum dots to a broadband photonic cavity resonance. By design, the device architecture uniquely combines the Purcell enhancement of a photonic micropillar structure with broadband photonic mode shaping of a vertical, tapered waveguide, making it an interesting candidate to enable the efficient extraction of entangled photon pairs. We detail the epitaxial growth of the heterostructure and the necessary lithography steps to approach a GaAs-based photonic device with a height exceeding 15 $\mu$m, supported on a pedestal that can be as thin as 20 nm. We present an optical characterization, which confirms the presence of broadband optical resonances, in conjunction with amplified spontaneous emission of single photons., Comment: 14 pages, 9 figures

Strain tuning emerged as an appealing tool to tune fundamental optical properties of solid state quantum emitters. In particular, the wavelength and fine structure of quantum dot states could be tuned using hybrid semiconductor-piezoelectric devices. Here, we show how an applied external stress can directly impact the polarization properties of coupled InAs quantum dot-micropillar cavity systems. In our experiment, we find that we can reversibly tune the anisotropic polarization splitting of the fundamental microcavity mode by approximately 60 $\mu\text{eV}$. We discuss the origin of this tuning mechanism, which arises from an interplay between elastic deformation and the photoelastic effect in our micropillar. Finally, we exploit this effect to tune the quantum dot polarization opto-mechanically via the polarization-anisotropic Purcell effect. Our work paves the way for optomechanical and reversible tuning of the polarization and spin properties of light-matter coupled solid state systems.

The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultra-compact quantum technology, in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid 2D-semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner, while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and in particular the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.

Scalable quantum photonic architectures demand highly efficient, high-purity single-photon sources, which can be frequency matched via external tuning. We demonstrate a single-photon source based on an InAs quantum dot embedded in a micropillar resonator, which is frequency tunable via externally-applied stress. Our platform combines the advantages of a Bragg micropillar cavity and the piezo-strain-tuning technique enabling single photon spontaneous emission enhancement via the Purcell effect and quantum dot (QD) with tunable wavelength. Our optomechanical platform has been implemented by integration of semiconductor-based QD-micropillars on a piezoelectric substrate. The fabricated device exhibits spontaneous emission enhancement with a Purcell factor of 4.4$\pm$0.7 and allows for a pure triggered single-photon generation with $g^{(2)}(0)$ < 0.07 under resonant excitation. A quantum dot emission energy tuning range of 0.75 meV for 27 kV/cm applied to the piezo substrate has been achieved. Our results pave the way towards the scalable implementation of single-photon quantum photonic technologies using optoelectronic devices., Comment: 16 pages, 4 figures