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Your search keyword '"Mohamad Taib, Mohamad Fariz"' showing total 22 results
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22 results on '"Mohamad Taib, Mohamad Fariz"'

7. First Principles Study and Experimental Investigation of Graphene-Molybdenum Disulphide Nanocomposites Based Passive Saturable Absorber

Author

Mohd Halim, Siti Nabilah, primary, Ahmad, Fauzan, additional, Lokman, Muhammad Quisar, additional, Sapingi, Husni Hani Jameela, additional, Mohamad Taib, Mohamad Fariz, additional, Wan Nawawi, Wan Mohd Fazli, additional, Yahaya, Hafizal, additional, Abdul Rahman, Mohd Azizi, additional, Shafie, Suhaidi, additional, and Harun, Sulaiman Wadi, additional

Published
2022
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12. Quantum dot solar cell studies on the influence of Cadmium Selenide(CdSe)QDs and the Zinc Sulfide(ZnS)QDs in the photoanode

Author

Saad Mohammad Azren, Samsi Noor Syafiqah, Hassan Oskar Hasdinor, Yahya Muhd Zu Azhan, Mohamad Taib Mohamad Fariz, Ali Ab Malik Marwan, and Zakaria Rosnah

Subjects
Engineering (General). Civil engineering (General), TA1-2040
Abstract

The mixture between the difference semiconductor quantum dot sensitizer which is cadmium selenide(CdSe) and zinc sulfide (ZnS) into the Dye-synthesis solar cell (DSSCs) can affect the value of resistance and capacity photoanode in the system.In this experiment, each sample consists difference weight percent of Zinc sulfide and the constant weight percent of CdSe. Docter blade technique is used to stick and spread evenly the mixture CdSe/ZnS QD on the surface of the thin film. To prove the assembled of CdSe/ZnS on the thin film were observed using Scanning Electron Microscopy (SEM). The resistance and capacity of the photoanode were characterized by using impedance spectroscopy(EIS). The smallest resistance is 37.1kΩ produce by CdSe/ZnS(20 wt%) and the largest resistance 825KΩ produce by CdSe/ZnS(50 wt%) while the highest capacity is 12 µF in the CdSe/ZnS(40 wt%) and the lowest capacity is CdSe/ZnS(20 wt%) which is 538 nF. The most suitable composition to be used as photoanode is CdSe/ZnS(40 wt%) because it has high capacity and low resistance.

Published
2018
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13. Studies of the absorbance peak on the N719 dye influence by combination between Cadmium Selenide (CdSe)QDs and Zinc Sulfide(ZnS)QDs

Author

Saad Mohammad Azren, Samsi Noor Syafiqah, Hassan Oskar Hasdinor, Yahya Muhd Zu Azhan, Mohamad Taib Mohamad Fariz, Ali Ab Malik Marwan, and Zakaria Rosnah

Subjects
Engineering (General). Civil engineering (General), TA1-2040
Abstract

The absorption rate of the photoanode can be influenced by the combination between the difference semiconductor quantum dot sensitizer. Six samples were prepared with difference weight percent (wt%) of ZnS from 0% to 50% and constant wt% of CdSe which then will be called as semiconductor QDs were immersed in 0.5mM of N719 dye. The purity of ZnS powder and CdSe powder was determined using x-ray diffraction (XRD).The ultraviolet-visible spectrophotometry (Uv-Vis) use to investigate the absorption spectrum and absorbance peak of this sample. 50 wt% of ZnS is the best composition to increase the absorbance peak of the photoanode. The Cyclic voltammetry (CV) of varying wt% of ZnS, found that the 40 wt% of ZnS is suitable combination for a DSSC’s photoanode and produced the higher current.

Published
2018
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19. Preface

Author

Karakas, A., Karakaya, M., Taser, M., Ceylan, Y., El Kouari, Y., Taboukhat, Said, Akdas-Kilig, Huriye, Fillaut, Jean-Luc, Karpierz, Miroslav, Ayadi, Awatef, Mydlova, Lucia, El-Ghayoury, Abdelkrim, Makowska-Janusik, Malgorzata, Lazar, C., Manea, A., Chtouki, T., Soumahoro, L., Kulyk, Bohdan, Bougharraf, H., Kabouchi, B., Erguig, H., Szukalski, A., Parafiniuk, K., Haupa, K., Goldeman, W., Kajzar, F., Mysliwiec, J., Arof, A.K., Buraidah, M.H., Teo, L.P., Winie, Tan, Woo, H.J., Pereira Silva, Pedro, Pereira Gonçalves, Mauro, Silva, Manuela Ramos, Zawadzka, Anna, Paixão, José, Harun, Kausar, Yaakob, Muhamad Kamil, Mohamad Taib, Mohamad Fariz, Sahraoui, Bouchta, Ahmad, Zainal Arifin, Mohamad, Ahmad Azmin, MOLTECH-Anjou, Université d'Angers (UA)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Institut des Sciences Chimiques de Rennes (ISCR), Université de Rennes (UR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Warsaw University of Technology [Warsaw], Laboratoire de physique de l'état condensé (LPEC), Le Mans Université (UM)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Spectronomie Moléculaire, Optique et Instrumentation Laser, Université Mohammed V de Rabat [Agdal] (UM5), Department of General Chemistry, University Politehnica of Bucharest [Romania] (UPB), Propriétés Optiques des Matériaux et Applications (POMA), Université d'Angers (UA)-Centre National de la Recherche Scientifique (CNRS), USM Fellowship, Universiti Sains Malaysia, MyBrain15 Scholarship, Ministry of Higher Education, Malaysia, Institut de Chimie du CNRS (INC)-Université d'Angers (UA)-Centre National de la Recherche Scientifique (CNRS), Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Université Mohammed V de Rabat [Agdal], Centre National de la Recherche Scientifique (CNRS)-Université d'Angers (UA), Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Rennes 1 (UR1), Université de Rennes (UNIV-RENNES)-Université de Rennes (UNIV-RENNES)-Ecole Nationale Supérieure de Chimie de Rennes (ENSCR)-Institut National des Sciences Appliquées - Rennes (INSA Rennes), Institut National des Sciences Appliquées (INSA)-Université de Rennes (UNIV-RENNES)-Institut National des Sciences Appliquées (INSA), and Centre National de la Recherche Scientifique (CNRS)-Le Mans Université (UM)

Subjects
[PHYS]Physics [physics], ComputingMilieux_MISCELLANEOUS
Abstract

International audience

Published
2017
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21. First-principles calculation on electronic properties of zinc oxide by zinc 13air system

Author

Mohamad, Ahmad Azmin, Hassan, Muhammad Syafiq, Yaakob, Muhamad Kamil, Mohamad Taib, Mohamad Fariz, Badrudin, Fadhlul Wafi, Hassan, Oskar Hasdinor, Yahya, Muhd Zu Azhan, Mohamad, Ahmad Azmin, Hassan, Muhammad Syafiq, Yaakob, Muhamad Kamil, Mohamad Taib, Mohamad Fariz, Badrudin, Fadhlul Wafi, Hassan, Oskar Hasdinor, and Yahya, Muhd Zu Azhan

Abstract

First-principles calculations are performed to study the electronic properties of zinc oxide (ZnO) formed on an anode after discharging a Zn 13air system. Prior to calculation, the ZnO is characterised by X-ray diffraction using Rietveld refinement. Diffracted patterns proved the formation of single phase ZnO, while Rietveld analysis shows that the ZnO has a hexagonal wurtzite structure with lattice parameters, a= 3.244 and c =5.199 A � . Geometry optimisation of the hexagonal wurtzite structure of the ZnO is performed using various exchange 13correlation energy functionals. The local density approximation functional method is used to explain the structure, electronic band structure and density of state properties of hexagonal ZnO. The calculated energy band gap was 0.75 eV while the density of states reveals that the O 2p (the top valence band) and Zn 4s (the bottom conduction band) states domination.

Published
2017

22. Electronic structure and Phase Stability of low-temperature Ba(Fe1-xNix)2As2 Superconductor.

Author

Kamaruddin, K. H., Zabidi, N. A., Rosli, Ahmad Nazrul, Azhan Yahya, Muhd Zu, and Mohamad Taib, Mohamad Fariz

Subjects
BARIUM compounds, DOPING agents (Chemistry), ELECTRONIC structure, EFFECT of temperature on metals, SUPERCONDUCTORS, ELECTRONS
Abstract

To understand the electron doping effect into the parent compound BaFe2As2, we have theoretically evaluated phase stability and electronic structure of low temperature nickel (Ni) doped Ba(Fe1-xNix)2As2 superconductor. The optimized Fmmm phase are calculated by first principles pseudopotential and plane wave calculations within generalized-gradient approximation (GGA) with Perdew-Perke-Ernzerhof (PBE) exchange correlation functional. Our results show that nonmagnetic (NM) and antiferromagnetic (AFM) state having anisotropic spin configuration in the band structure calculation. This finding shows that a clear gap is observed in the band structure upon optimally Ni doping in the NM state with a small indirect gap 43.68 meV is found in the direction of G-X points. A spin gap 47.8 meV is obtained when a spin polarized orbital calculation is introduced to the system. The hybridization of Fe/Ni-3d and As-4p in the density of states (DOS) results a metallic region near the Fermi level and flat bands exist below the level. We suggest the observation provides a crucial understanding in the superconductivity of the materials. [ABSTRACT FROM AUTHOR]

Published
2016
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