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Efficient utilization of on-chip Static Random Access Memory (SRAM) space is more important on processor core design in modern Field Programmable Gate Array (FPGA) based Digital Signal Processing (DSP) applications. In the proposed High-performance Approximate Single Port (HASP) SRAM architecture, a significant amount of data is stored to achieve high performance. The constraints involved with high performance are counterbalanced to provide high accuracy, high speed, low power and area efficiency. In the proposed High-performance Approximate Sub-Bank Dual Port (HASBDP1 and HASBDP2) memory architectures, HASP has been employed and modified to work as a True DP SRAM with energy and area efficiency. The performance of the proposed memories is investigated by comparing its speed, area and power with those of the existing approaches. The proposed HASP SRAM provides 14.99% less power consumption and thirteen numbers of logic elements savings in the resource utilization than the existing conventional SP SRAM. By considering the design metrics, the proposed HASBDP SRAMs outperform than the conventional TDP and sub-bank DP SRAMs approaches. The proposed HASBDP2 exhibits 29.09%, 22.37% higher PSNR and 32.94%, 28.48% higher SSIM than the truncated least significant bit and static segment on-chip approximate memories respectively. [ABSTRACT FROM AUTHOR]

An organic nonlinear optical single crystal, d -alanine dl -mandelic acid was synthesized and successfully grown by slow evaporation solution growth technique at ambient temperature using solvent of aqueous solution. The unit cell parameters were assessed from single crystal X-ray diffraction analysis. The presence of diverse functional groups and vibrational modes were identified using Fourier Transform Infra Red and Fourier Transform Raman spectral analyses. The chemical structure of grown crystal has been identified by Nuclear Magnetic Resonance spectroscopic study. Ultraviolet–visible spectral analysis reveal that the crystal has lower cut-off wavelength down to 259 nm, is a key factor to exhibit second harmonic generation signal. The electronic optical band gap and Urbach energy is calculated as 5.31 eV and 0.2425 eV respectively from the UV absorption profile. The diverse optical properties such as, extinction coefficient, reflectance, linear refractive index, optical conductivity was calculated using UV–visible data. The relative second harmonic efficiency of the compound is found to be 0.81 times greater than that of KH 2 PO 4 (KDP). The thermal stability of the grown crystal was studied by thermogravimetric analysis and differential thermal analysis techniques. The luminescence spectrum exhibited two peaks (520 nm, 564 nm) due to the donation of protons from carboxylic acid to amino group. The Vickers microhardness test was carried out employing one of the as-grown hard crystal and there by hardness number (H v ), Meyer's index (n), yield strength (σ y ), elastic stiffness constant (C 11 ) and Knoop hardness number (H K ) were assessed. The dielectric behaviour of the as-grown crystal was analyzed for different temperatures (313 K, 333 K, 353 K, and 373 K) at different frequencies. [ABSTRACT FROM AUTHOR]

Compact design is an extremely important criterion in the recent development error tolerant applications based on the high performance processor core. The performance of the processor core depends upon the data processing sub-system architectures. Area, delay and power reduction in the cost of accuracy have become the critical requirement of high quantity data computing Very Large Scale Integration (VLSI) architectures. In this paper, we proposed Compact Energy efficient Error Tolerant Adders (CEETAs) which have efficient design metrics for data intensive applications. To achieve area and energy efficiency, Simplified gate level Approximate Full Adders (SAFAs) are proposed in the inaccurate part of the CEETA and CEETA1 designs. The simulation result shows that the proposed SAFAs based CEETA1 adder exhibits low power consumption, less Power-Delay Product (PDP), less Area-Delay Product (ADP) and it offers a savings of 51.63%, 43.87%, 48.57%, 36.52%, 36.84%, 15.72%, 18.18% area than the conventional CSLA, SAET-CSLA, ETCSLA, HSETA, HSSSA, HPETA-I, HPETA-II, respectively. Further, the Simplified Approximate Full Adders (SAFA1E and SAFA2E), 4-2 Approximate Compressor (AC) modules based High Performance Error Tolerant Multipliers (HPETMs) are proposed for error tolerant applications. To achieve energy and area efficiency with high speed for the high quantity digital data computation, the propagation delay and the gate count reduction on the carry generation path are proposed in the SAFA and AC designs. The proposed HPETM1 has a significant amount of power and area savings and it exhibits 24.95%, 29.87%, 30.41%, 31.79%, 31.68%, 33.87%, and 35.58% lesser delay than the existing AM1, AM2, SSM, ACM1, ACM2, ACM3 and CDM respectively. [ABSTRACT FROM AUTHOR]

This research article proposes high-performance square-root carry select adder (SQRT CSLA) architectures with high speed, area and energy efficiency when compared to the existing SQRT CSLA architectures. The first proposed method uses an optimized design of binary to excess-1 converter (BEC)-based SQRT CSLA by incorporating a carry enable binary to excess-1 converter (CEBEC) design that exploits a new logic optimization on the carry propagation path to improve speed of operation, area and energy efficiency. The second proposed method is an optimized design of the regular SQRT CSLA by employing the carry enable and add-one ripple carry adder (ARCA) architectures to decrease the number of gates. Simulation results show that the proposed CEBEC SQRT CSLA offers a savings of 22.81%, 9.95%, 7.95% and 3.98% on area, 14.50%, 5.21%, 3.72% and 3.11% in power consumption and offers 6.78%, 15.46%, 6.57% and 3.83% lesser delay, 20.33%, 19.92%, 10.09% and 6.89% lesser PDP, 28%, 23.85%, 13.78% and 7.58% lesser ADP than the existing regular, BEC SQRT CSLA, SQRT CSLA1 and SQRT CSLA2 architectures. The proposed ARCA SQRT CSLA architecture exhibits 9.26%, 17.71%, 9.06% and 6.39% lesser delay than the existing regular, BEC SQRT CSLA, SQRT CSLA1 and SQRT CSLA2 architectures. [ABSTRACT FROM AUTHOR]

l -Methionine-Succinic acid (2/1) (LMSA), 2C 5 H 11 NO 2 S·C 4 H 6 O 4 , a novel nonlinear optical material which belongs to the class of organic category was grown-up for the first time by the technique of slow evaporation. Purity of LMSA was improved using repetitive recrystallization. LMSA was analyzed by single crystal and powder X-ray diffraction investigation to affirm the crystal structure and crystalline character. The single crystal XRD revealed that LMSA corresponds to the crystal system of triclinic with P1 as space group showing the asymmetric unit consists of a neutral succinic acid molecule and two methionine residues which are crystallographically independent existing in zwitterionic form. The functional groups existing in LMSA was accomplished using Fourier transform infrared spectroscopy. The optical transparency and the band gap energy were identified utilizing UV–Visible spectrum. The optical constants specifically reflectance and extinction coefficient clearly indicate the elevated transparency of LMSA. The thermal analyses affirmed its thermal stability. The luminescence behavior of LMSA has been analyzed by Photoluminescence (PL) spectral study. The mechanical, laser damage threshold and dielectric investigation of LMSA was done to suggest the material for practical applications. The second and third harmonic generation efficacy was confirmed by means of Kurtz-Perry and Z-scan procedure which attest its potentiality in the domain of nonlinear optics. [ABSTRACT FROM AUTHOR]

A nonlinear optical material benzoyl valine (BV) was synthesized by the technique of slow evaporation process at room temperature. The single crystal X ray diffraction analysis evince that crystal corresponds to acentric space group P21 with monoclinic system. The diverse optical properties assured an elevated transparency in BV crystal. Photoluminescence profile revealed the suitability of crystal for fabricating violet lasers. The Laser damage threshold and the dielectric behavior of the grown crystal were analyzed to indicate its practical applications. The second and third order nonlinear optical measurements were studied to prove its potentiality in the domain of nonlinear optical applications. [ABSTRACT FROM AUTHOR]