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Your search keyword '"Mokhov, D. V."' showing total 23 results
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23 results on '"Mokhov, D. V."'

12. Blazed Diffraction Gratings on Si --- First Results

Author

null Dashkov A. S., null Pirogov E. V., null Shubina K. Yu., null Sharov V. A., null Mokhov D. V., null Berezovskaya T. N., and null Goray L. I.

Abstract

Using direct laser lithography and wet etching of polished vicinal Si(111) wafers, a technology was developed and diffraction gratings 500 grooves/mm with a blaze angle of 4o were fabricated. The manufacturing process of a reflective Si-grating with the triangular profile (sawtooth) can be divided into four main steps: (1) obtaining a pattern of a protective mask for grooves etching; (2) anisotropic etching of grooves in KOH solution; (3) etching to smooth the grating profile and polish the surface of working facets; (4) coating to increase reflectivity. The samples obtained were characterized using scanning electron microscopy and atomic force microscopy methods to determine the shape of the groove profile and roughness: the shape turned out to be close to the ideal triangular, and the RMS roughness was less than 0.3 nm. Using PCGrateTM software and taking into account the measured real groove profile, the diffraction efficiency of gratings operating in classical and conical mounts in soft-X-ray and extreme ultraviolet radiation has been simulated. The obtained efficiency values are close to the record ones for the corresponding spectral range and the Au-coating of the grating. Keywords: diffraction grating, wet etching technology of Si, sawtooth groove profile, AFM, SEM, diffraction efficiency modelling.

Published
2022

13. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications

Author

null Goray L. I., null Sharov V. A., null Nashchekin A. V., null Pirogov E. V., null Shubina K. Yu., null Berezovskaya T. N., and null Mokhov D. V.

Abstract

Anisotropic wet etching of vicinal monocrystalline Si (111)4o wafers was used to obtain blazed gratings that are highly efficient in the soft X-ray (SXR) and extreme ultraviolet (EUV) applications. An improved experimental technology for the fabrication of triangular-grooved Si gratings, both medium-frequency (250 and 500 mm-1) and high-frequency (2500 mm-1) ones, is presented. The stages of forming a Cr-mask for grooves etching, removing Si nubs in order to smooth the profile, and polishing the surface to reduce nanoroughness have been optimized. This paper describes the way of simultaneously (in one process) obtaining a smoothed triangular profile of the Si grating and a polished surface of facets by wet etching. Keywords: diffraction grating, Si wet etching, triangular groove profile, AFM, SEM.

Published
2022

19. Elevated temperature lasing from injection microdisk lasers on silicon

Author

Kryzhanovskaya, N V, primary, Moiseev, E I, additional, Polubavkina, Y S, additional, Maximov, M V, additional, Mokhov, D V, additional, Morozov, I A, additional, Kulagina, M M, additional, Zadiranov, Y M, additional, Lipovskii, A A, additional, Tang, M, additional, Liao, M, additional, Wu, J, additional, Chen, S, additional, Liu, H, additional, and Zhukov, A E, additional

Published
2017
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23. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.

Author

Mizerov, A. M., Timoshnev, S. N., Nikitina, E. V., Sobolev, M. S., Shubin, K. Yu., Berezovskaia, T. N., Mokhov, D. V., Lundin, W. V., Nikolaev, A. E., and Bouravleuv, A. D.

Subjects
ACTIVE nitrogen, MOLECULAR beam epitaxy, SURFACE cleaning, EPITAXY, GALLIUM, SILICON
Abstract

The results obtained in a study of the synthesis of n+-GaN layers by plasma-assisted molecular-beam epitaxy on GaN/c-Al2O3 templates are reported. In particular, a method is developed for the pre-epitaxial cleaning of the GaN surfaces of templates to remove foreign atoms. It is shown that, to form GaN layers of comparatively good quality, including those doped with silicon up to ~4.6 × 1019 cm–3, GaN template surfaces should be pre-epitaxially cleaned in a flow of activated nitrogen particles, with the substrate temperature increased from TS = 400 to 600°C and the substrate surface subsequently exposed to a flow of activated nitrogen at a fixed value of TS = 600°C for 1 h. After that the substrate temperature should be raised to TS = 700°C and the GaN surface finally cleaned by means of a procedure for gallium deposition/desorption. [ABSTRACT FROM AUTHOR]

Published
2019
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