23 results on '"Mokhov, D. V."'
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2. Blazed Diffraction Gratings on Si—First Results
3. Blazed Silicon Gratings for Soft X-Ray and Extreme Ultraviolet Radiation: the Effect of Groove Profile Shape and Random Roughness on the Diffraction Efficiency
4. Silicon Echelles for Soft X-Ray and Extreme UV Radiation: Influence of the Camber of the Reflective Facet on the Diffraction Efficiency
5. Fabrication and Soft-X-Ray and EUV Range Testing of Au- and Multilayer Mo/Si-Coated Diffraction Gratings with High-Order Blaze
6. Method for Controlling the Polarity of Gallium Nitride Layers in Epitaxial Synthesis of GaN/AlN Heterostructures on Hybrid SiC/Si Substrates
7. Metal-Assisted Photochemical Etching of N- and Ga-Polar GaN Epitaxial Layers
8. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates
9. Processing of GaN/Si(111) Epitaxial Structures for MEMS Applications
10. Relationship Between the Rate of Photochemical Metal-Assisted Etching of GaN Layers and Multifractal Parameters of Their Surface Structure
11. Separation of AlN layers from silicon substrates by KOH etching
12. Blazed Diffraction Gratings on Si --- First Results
13. Optimization of triangular-profiled Si-grating fabrication technology for EUV and SXR applications
14. A study of the GaN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of GaN nanocolumns
15. The study of the AlN/Si(111) epitaxial structures grown by PA MBE via coalescence overgrowth of AlN nanocolumns
16. Preparation of Si substrates for monolithic integration of III−V quantum dots by selective MBE growth
17. Selective area epitaxy of n+-GaN layers on SiO2 patterned GaN/c-Al2O3 templates by PA MBE
18. Metal-assisted photoenhanced wet chemical etching of GaN epitaxial layers
19. Elevated temperature lasing from injection microdisk lasers on silicon
20. The effect of nitridation parameters and initial growth conditions on the polarity of GaN epitaxial layers grown by plasma-assisted molecular-beam epitaxy on Si(111) substrates
21. Separation of Ga-polar GaN layer from Si substrate by wet chemical etching
22. Precision calibration of the silicon doping level in gallium arsenide epitaxial layers
23. On the Specific Features of the Plasma-Assisted MBE Synthesis of n+-GaN Layers on GaN/c-Al2O3 Templates.
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