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We explore quantum-thermodynamic effects in a phosphorous (P)-doped graphene monolayer subjected to biaxial tensile strain. Introducing substitutional P atoms in the graphene lattice generates a tunable spin magnetic moment controlled by the strain control parameter $\varepsilon$. This leads to a magnetic quantum phase transition (MQPT) at zero temperature modulated by $\varepsilon$. The system transitions from a magnetic phase, characterized by an out-of-plane $sp^3$ type hybridization of the P-carbon (P-C) bonds, to a non-magnetic phase when these bonds switch to in-plane $sp^2$ hybridization. Employing a Fermi-Dirac statistical model, we calculate key thermodynamic quantities as the electronic entropy $S_e$ and electronic specific heat $C_e$. At finite temperatures, we find the MQPT is reflected in both $S_e$ and $C_e$, which display a distinctive $\Lambda$-shaped profile as a function of $\varepsilon$. These thermodynamic quantities sharply increase up to $\varepsilon = 5\% $ in the magnetic regime, followed by a sudden drop at $\varepsilon = 5.5\% $, transitioning to a linear dependence on $\varepsilon$ in the nonmagnetic regime. Notably, $S_e$ and $C_e$ capture the MQPT behavior for low and moderate temperature ranges, providing insights into the accessible electronic states in P-doped graphene. This controllable magnetic-to-nonmagnetic switch offers potential applications in electronic nanodevices operating at finite temperatures.

Defect-induced magnetism in graphene has been predicted theoretically and observed experimentally. However, there are open questions about the origin of the magnetic behavior when substitutional impurities with $sp$ electrons are considered. The aim of this work is to contribute to the understanding of impurity-induced spin magnetism in doped graphene systems. Thus, the electronic structure and spin magnetic moments for substitutional doped graphene with impurities from groups IIIA (B, Al, and Ga) and VA (N, P, As, Sb, and Bi) of the periodic table were obtained within the framework of density functional theory. The nature of the magnetic ground state was determined from calculations of the total energy as a function of the spin magnetic moment using the fixed spin moment method. We show that the spontaneous magnetization in the studied systems arises from an electronic instability by the presence of a narrow impurity band at the Fermi level. Furthermore, we found that the emergence of spin polarization requires the impurity to introduce an extra electron to the graphene lattice and that the impurity-carbon hybridization is close to the $sp^3$ geometry. These features reveal that the charge doping sign and the hybridization degree play a fundamental role in the origin of $sp$ magnetism in substitutional doped graphene., Comment: Accepted for publication in Physical Review B (14 June 2022) https://journals.aps.org/prb/

The effects of biaxial strain on the impurity-induced magnetism in P-doped graphene (P-graphene) and N-doped silicene (N-silicene) are studied by means of spin-polarized density functional calculations, using the supercell approach. The calculations were performed for three different supercell sizes $4\times 4$, $5\times 5$, and $6\times 6$, in order to simulate three different dopant concentrations 3.1, 2.0 and 1.4 %, respectively. For both systems, the calculated magnetic moment is 1.0 $\mu_B$ per impurity atom for the three studied concentrations. From the analysis of the electronic structure and the total energy as a function of the magnetization, we show that a Stoner-type model describing the electronic instability of the narrow impurity band accounts for the origin of $sp$-magnetism in P-graphene and N-silicene. Under biaxial strain the impurity band dispersion increases and the magnetic moment gradually decreases, with the consequent collapse of the magnetization at moderate strain values. Thus, we found that biaxial strain induces a magnetic quantum phase transition in P-graphene and N-silicene., Comment: Accepted for publication in Journal of Physics: Condensed Matter (17 February 2020)

The relaxation time of collective electronic states in a 2D distribution of quantum dots is investigated theoretically by simulating EELS experiments. From the numerical calculation of the probability of energy loss of an electron beam, traveling parallel to the distribution, it is possible to estimate the damping time of ferroelectric-like states. We generate this collective response of the distribution by introducing a mean field interaction among the quantum dots, and then, the model is extended incorporating effects of long-range correlations through a Bragg-Williams approximation. The behavior of the dielectric function, the energy loss function, and the relaxation time of ferroelectric-like states is then investigated as a function of the temperature of the distribution and the damping constant of the electronic states in the single quantum dots. The robustness of the trends and tendencies of our results indicate that this scheme of analysis can guide experimentalists to develop tailored quantum dots distributions for specific applications., Comment: Accepted and Will be published in Journal Physics Applied

We report results on the Young's modulus (YM) of defect-free and defective silicene nanoribbons (SNRs) as a function of length and temperature. In this study, we perform molecular dynamics simulations using the Environment-Dependent Interatomic Potential (EDIP) to describe the interaction of the Si atoms. We find that the Young's modulus of pristine and defective SNRs increases with the ribbon length in both chirality directions. It is shown that the Young's modulus of defective SNRs exhibit a complex dependence on the combinations of vacancies. With respect to temperature, we find that YM for SNRs with and without vacancy defects shows a nonlinear behavior and it could be tailoring for a given length and chirality., Comment: 14 pages, 14 figures. Published in RSC Advances

Silicene is the counterpart of graphene and its potential applications as a part of the current electronics, based in silicon, make it a very important system to study. We perform molecular dynamics simulations and analyze the structure of a two dimensional array of Si atoms by means of the radial distribution function, at different temperatures and densities. As a first approach, the 2D Lennard-Jones potential is used and two sets of parameters are tested. We find that the radial distribution function does not change with the parameters and resembles the corresponding to the (111) surface of the FCC structure. The liquid phase appears at very high temperatures, suggesting a very stable system in the solid phase., Comment: 5 pages, 6 figures. Published in Rev. Mex. Fis

This paper describes a study conducted by Northern Arizona University's Educational Technology faculty regarding training teachers for the integration of technology and the promotion of learner-centered instruction. Participants included traditional pre-service students enrolled in a required "Technology in the Classroom" course and veteran teachers engaged in professional development designed to provide instruction into the integration of technology into the classroom. Instruction modeled the integration of technology from a constructionist perspective, and provided participants the opportunity to engage in activities that utilized the integration of technology. The learning environment was designed to provide instruction to skills and practice exercises utilizing computer applications that could be later used within their teaching practice. Conclusions drawn from the study suggestion that currently learners may not have enough experience learning with the integration of technology to feel comfortable to take responsibility for this type of learner-centered environment. (Contains 10 references.) (AEF)

The self-assembled quantum dot with lens domain has rotational symmetry but it is intrinsically asymmetric when the electron moves perpendicularly to its circular base, {\it i. e.} along the rotational axis. To characterize this asymmetry, an external electric field is applied along the positive or negative direction of the rotational axis. We report the different Stark shifts appearing in the spectra as a function of the field intensity for different lens domains. It is shown that for a flat lens domain the asymmetry effects decrease, but even for very flat lenses they can not be approximated by a cylindrical domain. Finally, some optical properties such as the dielectric constant and electroabsorption are studied. Signatures of the energy spectrum reveal in these quantities. The importance of considering the proper lens domain as long as the magnitude and direction field to tune a specific level transition is stressed.

We present a theoretical approach to study the effects of an ac-field applied to quantum dots with semi-spherical symmetry. Using the Floquet formalism for this periodically driven system, the time-dependent Hamiltonian in the effective mass approximation is solved. We show that the Hilbert space of solutions is separated into orthogonal subspaces with different $z$-component of the angular momentum. We give an explicit analytical representation for electronic states as a function of the intensity and frequency of the electric field. Under the two level approximation, two particular cases are studied: the low- and high-frequency regimes, which result of comparing the ac-field frequency to the characteristic level splitting at zero field., Comment: 3 pages, one figure

We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction that follows the exponential law expected for variable range hopping between localized states. Hall measurements on a Cr-GaN sample indicate a mobility of 0.06 cm^2/V.s, which falls in the range characteristic of hopping conduction, and a free carrier density (1.4E20/cm^3), which is similar in magnitude to the measured magnetically-active Cr concentration (4.9E19/cm^3). A large negative magnetoresistance is attributed to scattering from loose spins associated with non-ferromagnetic impurities. The results indicate that ferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands., Comment: 14 pages, 4 figures, submitted to APL

The electronic and optical properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. We calculate the surface electronic band structure and the Reflectance Anisotropy Spectrum, which are described and discussed in terms of the surface electronic states and the atomic structure., Comment: 15 pages + 4 figures, submitted to PRB

The electronic properties of the cleavage InAs(110) surface are studied using a semi-empirical tight-binding method which employs an extended atomic-like basis set. We calculate the surface electronic band structure which is studied as a function of the structural parameters of the surface. We describe and discuss the electronic character of the surface electronic states and we compare with other theoretical approaches, and with experimental observations. Finally, we discuss which atomic model better resembles the available experimental data., Comment: 6 pages + 3 figures