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We present a non-reactive force field for molecular dynamics simulations of interfaces between passivated amorphous surfaces and their interaction with water. The force field enables large-scale dynamic simulations of dry and lubricated tribological contacts and is tailored to surfaces with hydrogen, hydroxyl and aromatic surface passivation. To favour its compatibility with existing force-field parameterizations for liquids and allow a straightforward extension to other types of surface passivation species, we adopt the commonly used OPLS functional form. The optimisation of the force-field parameters is systematic and follows a protocol that can be reused for other surface-molecule combinations. Reference data are calculated with gradient- and dispersion-corrected density functional theory and include the bonding structure and elastic deformation of bulk and surface structures as well as surface adhesion and water adsorption energy landscapes. The conventions adopted to define the different force-field atom types are based on the hybridisation of carbon orbitals and enable a simple and efficient parameter optimisation strategy based on quantum-mechanical calculations performed only on crystalline reference structures. Transferability tests on amorphous interfaces demonstrate the effectiveness of this approach. After testing the force field, we present two examples of application to tribological problems. Namely, we investigate relationships between dry friction and the corrugation of the contact potential energy surface and the dependency of friction on the thickness of interface water films. We finally discuss the limitations of the force field and propose strategies for its improvement and extension.

We investigate the behavior of amorphous silicon under hydrostatic compression using molecular simulations. During compression, amorphous silicon undergoes a discontinuous nonequilibrium transition from a low-density to a high-density structure at a pressure of around $13$-$16$~GPa. Ensemble-averaged density and elastic constants change discontinuously across the transition. Densification of individual glassy samples occurs through a series of discrete plastic events, each of which is accompanied by a vanishing shear modulus. This is the signature of a series of elastic instabilities, similar to shear transformation zones observed during shear yielding of glasses. We compare the structure obtained during compression with a near-equilibrium form of amorphous silicon obtained by quenching a melt at constant pressure. This gives structures identical to nonequilibrium compression at low and high pressure, but the transition between them occurs gradually rather than discontinuously. Our observations indicate that the polyamorphic transition is of a nonequilibrium nature, and it has the characteristics of a yield transition that occurs under compression instead of shear., Comment: 9 pages, 6 figures

The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however, requires elaborate pre-epitaxy processes for substrate patterning. Our molecular dynamics simulations reveal that homoepitaxial silicon nanofilms can be directly deposited by a crystalline silicon tip rubbing against the substrate, thus enabling geometrically controlled crystal growth with no need for substrate pre-patterning. We name this solid-phase epitaxial growth triboepitaxy as it solely relies on shear-induced amorphization and recrystallization that occur even at low temperature at the sliding interface between two silicon crystals. The interplay between the two concomitant, shear-induced processes is responsible for the formation of an amorphous sliding interface with constant nanometric thickness. If the two elastically anisotropic crystals slide along different crystallographic orientations, the amorphous layer can move unidirectionally perpendicular to the sliding plane, causing the crystal with lowest elastic energy per atom to grow at the expenses of the other crystal. As triboepitaxial growth is governed by the shear elastic response of the two crystals along the sliding direction, it can be implemented as a mechanical scanning-probe lithography method in which epitaxial growth is controlled by tuning the crystallographic misorientation between tip and substrate, the tip's size or the normal force. These results suggest a radically new way to conceive nanofabrication techniques that are based on tribologically induced materials transformations., Comment: 35 pages, 13 figures, 1 table