Search

Your search keyword '"Morioka, Jun"' showing total 170 results
Start Over Author "Morioka, Jun"
170 results on '"Morioka, Jun"'

10. Superiority of Endovascular Coiling Over Surgical Clipping for Clinical Outcomes at Discharge in Patients With Poor-Grade Subarachnoid Hemorrhage: A Registry Study in Japan.

Author

Ishikawa, Tatsuya, Ikawa, Fusao, Ichihara, Nao, Yamaguchi, Koji, Funatsu, Takayuki, Nakatomi, Hirofumi, Shiokawa, Yoshiaki, Sorimachi, Takatoshi, Murayama, Yuichi, Suzuki, Kaima, Kurita, Hiroki, Fukuda, Hitoshi, Ueba, Tetsuya, Shimamura, Norihito, Ohkuma, Hiroki, Morioka, Jun, Nakahara, Ichiro, Uezato, Minami, Chin, Masaki, and Kawamata, Takakazu

Published
2024
Full Text
View/download PDF

15. Reduced Workflow Times for Reperfusion Therapy After Acute Ischemic Stroke Using a Visual Task Management Application

Author

Matsumoto, Shoji, primary, Nakahara, Ichiro, additional, Yasuda, Ayuko, additional, Ishii, Akira, additional, Kubo, Michiya, additional, Yamada, Kentaro, additional, Okawa, Masakazu, additional, Nishi, Hidehisa, additional, Miura, Toshiyasu, additional, Koike, Daisuke, additional, Okita, Shinpei, additional, Aoki, Michiru, additional, Tanaka, Koji, additional, Suyama, Yoshio, additional, Morioka, Jun, additional, Hasebe, Akiko, additional, Tanabe, Jun, additional, Suyama, Kenichiro, additional, Watanabe, Sadayoshi, additional, Kuwahara, Kiyonori, additional, Ishihara, Takuma, additional, Koyama, Hiroshi, additional, and Kira, Jun‐ichi, additional

Published
2023
Full Text
View/download PDF

27. Cortical Blood Flow Insufficiency Scores with Computed Tomography Perfusion can Predict Outcomes in Aneurysmal Subarachnoid Hemorrhage Patients: A Cohort Study

Author

Tanabe, Jun, primary, Nakahara, Ichiro, additional, Matsumoto, Shoji, additional, Suyama, Yoshio, additional, Morioka, Jun, additional, Oda, Jumpei, additional, Hasebe, Akiko, additional, Suzuki, Takeya, additional, Watanabe, Sadayoshi, additional, Suyama, Kenichiro, additional, Ohta, Tsuyoshi, additional, Murayama, Kazuhiro, additional, and Hirose, Yuichi, additional

Published
2020
Full Text
View/download PDF

37. Recrystallization, redistribution, and electrical activation of strained-silicon/Si0.7Ge0.3 heterostructures with implanted arsenic.

Author

Sugii, Nobuyuki, Irieda, Shigefumi, Morioka, Jun, and Inada, Taroh

Subjects
HETEROSTRUCTURES, SILICON, SUPERLATTICES, METAL oxide semiconductor field-effect transistors, ANNEALING of crystals, ARSENIC
Abstract

For strained-silicon metal-oxide-semiconductor field-effect-transistors (MOSFETs), the formation of a low-resistance source and drain region is as important in terms of enhanced performance as optimizing the strain-induced increase in inversion-carrier mobility. The crystallographic, compositional, and electrical properties of an arsenic-ion implanted strained silicon/Si0.7Ge0.3 heterostructure were investigated in order to acquire basic information for fabricating low-resistance source and drain region of the n-channel strained-silicon MOSFET. The strained-silicon layer is completely recrystallized by rapid thermal annealing after arsenic implantation, but misfit dislocations were formed by annealing (at 1000 °C) in the case thickness of the strained-silicon layer exceeding the critical thickness. Arsenic diffusivity in strained silicon was identical to that in silicon, whereas that in SiGe was higher than that in silicon. Germanium recoil and enhanced diffusion caused by arsenic implantation to the SiGe layer was observed. This phenomenon can degrade the abruptness of the strained-silicon/SiGe interface during the formation of a shallow source and drain region. Solubility limit of arsenic in strained silicon was 2×1020 cm-3 and identical to that in silicon, on the other hand, the solubility limit in Si0.7Ge0.3 reduced by half. Electron mobility in strained silicon was by about 20%–30% higher than that in silicon, and that in Si0.7Ge0.3 was by about 20%–30% lower than those in silicon. In order to reduce parasitic resistance in the shallow source and drain region, thicker strained silicon layer is thus desirable, however, it should be very careful to control the strained-silicon thickness below the critical value. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR]

Published
2004
Full Text
View/download PDF

40. Recrystallization, redistribution, and electrical activation of strained-silicon/Si(sub 0.7)Ge(sub 0.3) heterostructures with implanted arsenic

Author

Sugii, Nobuyuki, Irieda, Shigefumi, Morioka, Jun, and Inada, Taroh

Subjects
Germanium -- Properties, Germanium -- Research, Arsenic compounds -- Properties, Arsenic compounds -- Research, Silicon compounds -- Structure, Silicon compounds -- Properties, Silicon compounds -- Research, Physics
Abstract

Recrystalization, the redistribution of arsenic and germanium and electrical properties of strained-silicon/ Si(sub 0.7)Ge(sub 0.3) heterostructures were investigated. It was revealed that a thicker layer of strained silicon is desirable in terms to reduced parasitic resistance.

Published
2004

Catalog

Books, media, physical & digital resources
See catalog results