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Defect passivation is nowadays considered a must‐have route for high‐efficiency perovskite solar cells. However, a general rule that correlates the choice of passivating agents with performance enhancements is still missing. Herein, two different thiophene salts that are used as passivating agents are compared, namely thiophene methylammonium chloride and thiophene ethylammonium chloride (TEACl), which are used for the passivation of bulk and surface defects in triple‐cation‐based metal halide perovskites. First, it is observed that the surface passivation method leads to better device performances reaching a power conversion efficiency of 23.56%, with reduced voltage losses and increased fill factor when compared with the reference. Second, it is demonstrated that the chemical structure of the cation dictates its capability either in passivating bulk defects effectively or to form a superficial two‐dimensional/three‐dimensional heterostructure, which happens only for the TEACl case. The chemical composition and the cation dimension are responsible for device performance enhancement as observed by a joint spectroscopic and density functional theory simulations study, providing rational guidelines for further smart device design. [ABSTRACT FROM AUTHOR]

Hybrid vapor deposition is one of the most appealing processes for perovskite photovoltaics fabrication, thanks to its versatile nature. By using sequentially different vapor deposition processes tailored to the inorganic and organic perovskite precursors' peculiarities, this type of process gives access to the full potential of vapor deposition. While vapor deposition of metal halides is well understood and mastered, vapor deposition of organohalide species is much more delicate (degradation of vapors, high vapor pressure, setup‐specific constraints). Here, a novel close space sublimation system is reported and in‐depth insights on the conversion into perovskite of a metal halide template are provided. In this evolution of the process, the substrate coated with metal halide template and the organohalide source are loaded together in a dedicated holder, then transferred into a vacuum chamber on a heating element already at temperature setpoint. The system enables a simple, fast, low‐cost, and easy‐to‐reproduce organohalide vapor deposition process. The formation of the perovskite in situ and identification different conversion regimes are studied. Furthermore, the influence of the chemical environment and chamber design on the process are discussed. Compositional tuning and additive engineering in the process are processed and fabricate proof of concept photovoltaic devices reaching high fill factors of 80% and 17% power conversion efficiency for a bandgap of 1.63 eV. [ABSTRACT FROM AUTHOR]

The development of an efficient fabrication route to achieve high‐resolution perovskite pixel array is key for large‐scale flexible image sensor devices. Herein, a high‐resolution and stable 10 × 10 flexible PDs array based on formamidinium(FA+) and phenylmethylammonium (PMA+) quasi‐2D (PMA)2FAPb2I7 (n = 2) perovskite is demonstrated by developing SiO2‐assisted hydrophobic and hydrophilic treatment process on polyethylene terephthalate substrate. By introducing Au nanoparticles (Au NPs), the perovskite film quality is improved and grain boundaries are reduced. The mechanism by which Au NPs upgrade the photoelectric quality of perovskite is mainly revealed by glow discharge‐optical emission spectroscopy (GD‐OES) and grazing‐incidence wide‐angle X‐ray scattering (GIWAXS). To further improve the photoelectric performance of the devices, a post‐treatment strategy with formamidinium chloride (FACl) is used. The optimized flexible PDs arrays show excellent optoelectronic properties with a high responsivity of 4.7 A W−1, a detectivity of 6.3 × 1012 Jones, and a broad spectral sensitivity. The device also exhibits excellent electrical stability even under severe bending and excellent flexural strength, as well as excellent environmental stability. Finally, the integrated flexible PDs arrays are used as sensor pixels in an imaging system to obtain high‐resolution imaging patterns, demonstrating the imaging capability of the PDs arrays. [ABSTRACT FROM AUTHOR]

Small π-conjugated organic molecules have attracted substantial attention in the past decade as they are considered as candidates for future organic-based (opto-)electronic applications. The molecular arrangement in the organic layer is one of the crucial parameters that determine the efficiency of a given device. The desired orientation of the molecules is achieved by a proper choice of the underlying substrate and growth conditions. Typically, one underlying material supports only one inherent molecular orientation at its interface. Here, we report on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS2 substrate. We show that DIP molecules adopt a lying-down orientation when deposited on few-layer MoS2 with horizontally oriented layers. In contrast, for vertically aligned MoS2 layers, DIP molecules are arranged in a standing-up manner. Employing in situ and real-time grazing-incidence wide-angle X-ray scattering (GIWAXS), we monitored the stress evolution within the thin DIP layer from the early stages of the growth, revealing different substrate-induced phases for the two molecular orientations. Our study opens up new possibilities for the next-generation of flexible electronics, which might benefit from the combination of MoS2 layers with unique optical and electronic properties and an extensive reservoir of small organic molecules. [ABSTRACT FROM AUTHOR]

The last few decades faced on the fabrication of advanced engineering materials involving also different composites. Here, we report on the fabrication of few-layer molybdenum disulfide on top of thin polycrystalline diamond substrates with a high specific surface area. In the method, pre-deposited molybdenum coatings were sulfurized in a one-zone furnace at ambient pressure. As-prepared MoS2 layers were characterized by several techniques including grazing-incidence wide-angle X-ray scattering, atomic force microscopy, scanning electron microscopy, Raman spectroscopy and X-ray photoelectron spectroscopy. We found out that the initial thickness of Mo films determined the final c-axis crystallographic orientation of MoS2 layer as previously observed on other substrates. Even though it is well-known that Mo diffuses into diamond at elevated temperatures, the competing sulfurization applied effectively suppressed the diffusion and a chemical reaction between molybdenum and diamond. In particular, a Mo2C layer does not form at the interface between the Mo film and diamond substrate. The combination of diamond high specific surface area along with a controllable layer orientation might be attractive for applications, such as water splitting or water disinfection. [ABSTRACT FROM AUTHOR]

At present, the power conversion efficiency of single-junction perovskite-based solar cells reaches over 26%. The further efficiency increase of perovskite-based optoelectronic devices is limited mainly by defects, causing the nonradiative recombination of charge carriers. To improve efficiency and ensure reproducible fabrication of high-quality layers, it is crucial to understand the perovskite nucleation and growth mechanism along with associated process control to reduce the defect density. In this study, we investigate the growth kinetics of a promising narrow bandgap perovskite, formamidinium methylammonium lead iodide (FAMAPbI 3 ), for high-performance single-junction solar cells. The temporal evolution of structural and optoelectronic properties during FAMAPbI 3 vacuum codeposition was inspected in real time by grazing-incidence wide-angle X-ray scattering and photoluminescence. Such a combination of analytical techniques unravels the evolution of intrinsic defect density and layer morphology correlated with lattice strain from the early stages of the perovskite deposition.

Small π-conjugated organic molecules have attracted substantial attention in the past decade as they are considered as candidates for future organic-based (opto-)electronic applications. The molecular arrangement in the organic layer is one of the crucial parameters that determine the efficiency of a given device. The desired orientation of the molecules is achieved by a proper choice of the underlying substrate and growth conditions. Typically, one underlying material supports only one inherent molecular orientation at its interface. Here, we report on two different orientations of diindenoperylene (DIP) molecules on the same underlayer, i.e. on a few-layer MoS 2 substrate. We show that DIP molecules adopt a lying-down orientation when deposited on few-layer MoS 2 with horizontally oriented layers. In contrast, for vertically aligned MoS 2 layers, DIP molecules are arranged in a standing-up manner. Employing in situ and real-time grazing-incidence wide-angle X-ray scattering (GIWAXS), we monitored the stress evolution within the thin DIP layer from the early stages of the growth, revealing different substrate-induced phases for the two molecular orientations. Our study opens up new possibilities for the next-generation of flexible electronics, which might benefit from the combination of MoS 2 layers with unique optical and electronic properties and an extensive reservoir of small organic molecules.

Few-layer MoS 2 films are promising candidates for applications in numerous areas, such as photovoltaics, photocatalysis, nanotribology, lithium batteries, hydro-desulfurization catalysis and dry lubricants, especially due to their distinctive electronic, optical, and catalytic properties. In general, two alignments of MoS 2 layers are possible - the horizontal and the vertical one, having different physicochemical properties. Layers of both orientations are conventionally fabricated by a sulfurization of pre-deposited Mo films. So far, the Mo thickness was considered as a critical parameter influencing the final orientation of MoS 2 layers with horizontally and vertically aligned MoS 2 grown from thin (1 nm) and thick (3 nm) Mo films, respectively. Here, we present a fabrication protocol enabling the growth of horizontally or vertically aligned few-layer MoS 2 films utilizing the same Mo thickness of 3 nm. We show that the sulfur vapor is another parameter influencing the growth mechanism, where a sulfurization with higher sulfur vapor pressure leads to vertical MoS 2 layers and slow sulfur evaporation results in horizontally aligned layers for a thicker Mo starting layer., Competing Interests: There are no conflicts of interest to declare., (This journal is © The Royal Society of Chemistry.)