49 results on '"Musca, Charles A."'
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2. Characterization of electrically active defects in photovoltaic detector arrays using laser beam-induced current
3. Evaluation of plasma deposited silicon nitride thin films for microsystems technology
4. Noise modeling in HgCdTe heterostructure devices
5. Multi-heterojunction large area HgCdTe long wavelength infrared photovoltaic detector for operation at near room temperatures
6. Local bonding environment of plasma deposited nitrogen-rich silicon nitride thin films.
7. Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation
8. Elasto-plastic characterisation of low-temperature plasma-deposited silicon nitride thin films using nanoindentation
9. Laser beam induced current for qualitative evaluation of HgCdTe van der Pauw sample uniformity
10. Materials and Processes for MEMS-Based Infrared Microspectrometer Integrated on HgCdTe Detector
11. Micro-electromechanical systems-based microspectrometers covering wavelengths from 1500nm to 5000nm
12. Fabry-Perot MEMS microspectrometers spanning the SWIR and MWIR
13. Extending the tuning range of SWIR microspectrometers
14. Strain and orientation effects in mercury cadmium telluride grown by molecular beam epitaxy
15. Annealing and Shunting in RCE HgCdTe Photoconductors
16. High density plasma processing of p-Hg0.7Cd0.3Te
17. Determination of mechanical properties of silicon nitride thin films using nanoindentation
18. Determination of residual stress in low-temperature PECVD silicon nitride thin films
19. Chemical structure of low-temperature plasma-deposited silicon nitride thin films
20. Characterization of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays
21. The effects of vacuum baking on the I-V characteristics of LWIR HgCdTe photodiodes
22. Accurate determination of composition profiles in abrupt MBE-grown HgCdTe heterostructures
23. Refractive index engineering for a distributed Bragg reflector for a resonant-cavity-enhanced detector
24. Extending the tuning range of SWIR microspectrometers.
25. Fabry-Perot MEMS microspectrometers spanning the SWIR and MWIR.
26. Micro-electromechanical systems-based microspectrometers covering wavelengths from 1500nm to 5000nm.
27. HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching
28. Minority carrier lifetime in abrupt MBE grown HgCdTe heterostructures
29. Towards MEMS-based infrared tunable microspectrometers
30. Tunable Fabry-Perot filters operating in the 3 to 5 m range for infrared micro-spectrometer applications.
31. Characterization of crosstalk in HgCdTe n-on-p photovoltaic infrared arrays.
32. Accurate determination of composition profiles in abrupt MBE-grown HgCdTe heterostructures.
33. Determination of residual stress in low-temperature PECVD silicon nitride thin films.
34. Refractive index engineering for a distributed Bragg reflector for a resonant-cavity-enhanced detector.
35. Mobility spectrum techniques for characterizing multilayer semiconductor structures
36. RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability
37. HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching.
38. Towards MEMS-based infrared tunable microspectrometers.
39. RIE-induced n-on-p junction HgCdTe photodiodes: effects of passivant technology on bake stability.
40. Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization
41. Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology
42. Passivation and surface effects in long-wavelength infrared HgCdTe photoconductors
43. Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology.
44. Laser-beam-induced current technique as a quantitative tool for HgCdTe photodiode characterization.
45. Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors.
46. Midwavelength infrared Hg1-xCdxTe photoconductor performance at T>80K.
47. Long-wavelength infrared photoconductor technology based on epitaxially grown Hg1-xCdxTe.
48. Long-wavelength infrared photoconductor technology based on epitaxially grown Hg1-xCdxTe
49. Isothermal vapor phase epitaxy as a versatile technology for infrared photodetectors
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