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We report on MOCVD growth of the (In,Al)As-se1f-organized quantum dots (QD) on (Al,Ga)As. We demonstrate that dense arrays (about 2 x 10exp10/cm2) of small ( about 5 nm) QD are formed during annealing (75O C, 20 min, excess of arsine) of In(0.5)Al(0.5)As deposited at 500 C on a Al(0.6)Ga(0.4)As surface as demonstrated by atomic force and transmission electron microscopies and by photoluminescense. We determined that the opening process continues at room temperature and gives rise to large clusters of submicron size after time of one. In contrast, an identical sample that is not annealed shows low density (2 x 10exp9/cm2) of the QDs. Aging in this case gives results in a gradual smoothing of the morphology., Pres: 7th Int Symp Nanostructures: Physics and Technology, St Petersburg, Russia; 14-18 Jun 1999. p525-528. This article is from ADA407055 Nanostructures: Physics and Technology. 7th International Symposium. St. Petersburg, Russia, June 14-18, 1999 Proceedings