1. A New Direct Measurement Method of Time Dependent Dielectric Breakdown at High Frequency
- Author
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Jacques Cluzel, Xavier Garros, M. Arabi, Mustapha Rafik, Gerard Ghibaudo, Xavier Federspiel, Institut de Microélectronique, Electromagnétisme et Photonique - Laboratoire d'Hyperfréquences et Caractérisation (IMEP-LAHC), Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), and Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
- Subjects
010302 applied physics ,Materials science ,Dielectric strength ,business.industry ,Pulse generator ,Transistor ,Silicon on insulator ,Time-dependent gate oxide breakdown ,01 natural sciences ,7. Clean energy ,Electronic, Optical and Magnetic Materials ,law.invention ,law ,Distortion ,Logic gate ,0103 physical sciences ,Optoelectronics ,Electrical and Electronic Engineering ,[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics ,business ,ComputingMilieux_MISCELLANEOUS ,Electronic circuit - Abstract
A novel technique is presented for a direct evaluation of oxide breakdown under AC stress at high frequencies up to 500MHz. It relies on a RF setup, which combines a high speed pulse generator, transition converters and $50\Omega $ termination probes, to deliver to the device a digital AC signal without overshoot and distortion. The method leads to similar results than a complex on-chip solution while offering more simplicity and flexibility. Time Dependent Dielectric Breakdown (TDDB) in 28nm Fully Depleted Silicon On Insulator (FDSOI) transistors is then characterized under DC and AC stress at various frequencies. It follows a power law with frequency TDDB $\alpha \text{F}^{\mathbf {a}}$ with a ≈0.3, allowing an extended lifetime to circuits operating at GHz frequency.
- Published
- 2020
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