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Features of processes of a dielectric relaxation and charge transport in photorefractive sillenite crystals Bi12TiO20 at low frequency range are investigated. It was found that the dispersion of dielectric permittivity ε' in crystals Bi12TiO20 is characterized by its growth with lowering frequency and rising temperature. This behaviour may be related to existence of dipole-relaxation polarization mechanism. The frequency dependence of dielectric loss tgδ reveals the existence of low frequency relaxation peaks in the studied temperature range. From the conductivity dependence on the frequency and temperature it was found that conductivity σ increases as frequency increases in the low frequency range. The observed dependence σ(ω)≈Аωs indicates that transport mechanism is due to hopping of carriers via localized electron states. The charge transport is thermally activated process in which activation energy Ea = (0.82±0.03) eV.

The quantitative analysis of experimental results of research thermostimulated currents in crystals Bi12SiO20 (BSO) is lead carried out. Parameters of the capture centers in crystals BSO are determined.