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This paper presents a new 8-bit adder circuit, called discrepant low PDP 8-bit adder (DLPA) based on three new full adder cells, which have been designed based on requirements of different positions in each 8-bit adder circuit. In order to design the full adder cells, a new and general method has been proposed aiming to achieve full-swing output and low number of transistors. The proposed adder along with several state-of-the-art adders from the literature have been extensively analyzed and compared together. The results revealed that the power-delay product of DLPA is almost more than 20 % less than that of other compared circuits. [ABSTRACT FROM AUTHOR]

A novel low power-delay product full adder circuit is presented in this paper. A new approach is used in order to design full-swing full adder with low number of transistors. The proposed full adder is implemented in MOSFET-like Carbon nanotube technology and the layout is provided based on standard 32 nm technology from MOSIS. The simulation results using HSPICE show that, there are substantial improvements in both power and performance of the proposed circuit compared to latest designs. In addition, the proposed circuit has been implemented in conventional 32 nm process to estimate the advantages of using carbon-based transistors in digital designs over conventional silicon technology. The proposed circuit can be applied in ultra low power and very high speed applications. [ABSTRACT FROM AUTHOR]

Novel analytical models for surface field distribution and saturation region length for double gate graphene nanoribbon transistors are proposed. The solutions for surface potential and electric field are derived based on Poisson equation. Using the proposed models, the effects of several parameters such as drain-source voltage, oxide thickness and channel length on the length of saturation region and electric field near the drain are studied. [ABSTRACT FROM AUTHOR]

Abstract: A semi-analytical model for impact ionization coefficient of graphene nanoribbon (GNR) is presented. The model is derived by calculating probability of electrons reaching ionization threshold energy E t and the distance travelled by electron gaining E t . In addition, ionization threshold energy is semi-analytically modelled for GNR. During modelling, we justify our assumptions using analytical modelling and comparison with simulation. Furthermore, it is shown that conventional silicon models are not valid for calculation of ionization coefficient of GNR. Finally, the profile of ionization is presented using the proposed models and the results are compared with that of silicon. [Copyright &y& Elsevier]