141 results on '"Nag, Manoj"'
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2. Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
3. Scaling Study of Contact Operation at Constant Current in Oxide Semiconductor Field-Effect Transistors
4. Low-temperature and scalable complementary thin-film technology based on solution-processed metal oxide n-TFTs and pentacene p-TFTs
5. Going Towards High-Resolution, Uniform AMOLED Displays with a High Brightness Range
6. 45.3: Invited Paper: Going Towards High‐Resolution, Uniform AMOLED Displays with a High Brightness Range
7. An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors
8. Systematic Study on the Amorphous, C-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors
9. (Invited) Sub-40mV Sigma VTH Igzo nFETs in 300mm Fab
10. Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al2O3 as High-κ Gate Dielectric
11. A Large-Area a-IGZO 256x256 Imager Using a Current-Mode Transimpedance Readout for Mammography Applications
12. Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
13. High Performance Dual-Gate Dual-Layer Amorphous Oxide Semiconductors TFTs on PI Foil for Display Application
14. P‐12: High Performance Dual‐gate Dual‐layer Amorphous Oxide Semiconductors TFTs on PI Foil for Display Application
15. 9‐1: Invited Paper: Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
16. 2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal–Oxide TFTs
17. 45.3: Invited Paper:Going Towards High‐Resolution, Uniform AMOLED Displays with a High Brightness Range
18. Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
19. Thin-film electronics for next generation display and IOT applications
20. Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs
21. P-127: Dual-Gate Self-Aligned IGZO TFTs Monolithically Integrated with High-Temperature Bottom Moisture Barrier for Flexible AMOLED
22. Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
23. Self-Aligned Amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors on Polyimide Foil
24. Single-source dual-layer amorphous IGZO thin-film transistors for display and circuit applications
25. Characteristics improvement of top-gate self-aligned amorphous indium gallium zinc oxide thin-film transistors using a dual-gate control
26. 5-3:Distinguished Paper: Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications
27. Power saving through state retention in IGZO-TFT AMOLED displays for wearable applications
28. Medium Frequency Physical Vapor Deposited AI203 and SiO2 as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
29. Flexible AMOLED display with integrated gate driver operating at operation speed compatible to 4k2k
30. Interpretation of frequency dependent capacitance-voltage curves of amorphous Indium Gallium Zinc Oxide (a-IGZO) thin film transistors
31. Low-temperature formation of source-drain contacts in self-aligned amorphous oxide TFTs
32. Digital PWM driven AMOLED display on flex reducing static power consumption
33. Conduction mechanism in amorphous InGaZnO thin film transistors
34. Back-channel-etch process flow for a-IGZO TFTs
35. Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications.
36. 9‐1: Invited Paper:Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
37. Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities
38. Paper No S12.5: Self-Aligned a-IGZO TFTs: Impact of S/D Contacts Formation on Their Negative-Bias-Illumination-Stress (NBIS) Instability
39. P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics
40. 29.4: Flexible AMOLED Display with Integrated Gate Driver Operating at Operation Speed Compatible with 4k2k
41. Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors
42. Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
43. Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
44. Integrated Line Driver for Digital Pulse-Width Modulation Driven AMOLED Displays on Flex
45. Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors
46. Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
47. Circuits and AMOLED display with self-aligned a-IGZO TFTs on polyimide foil
48. 5-3: Distinguished Paper: Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications.
49. Impact of etch stop layer on negative bias illumination stress of amorphous Indium Gallium Zinc Oxide transistors
50. An Integrated a-IGZO UHF Energy Harvester for Passive RFID Tags
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