Search

Low-cost, light-weight, low-power, large-format, room-temperature, mid-wave infrared (MWIR) detectors are needed for reduced-scale aircraft. An opportunity, suggested by direct-read X-radiography systems, is the use of thin film transistor (TFT) array as read-out integrated circuit (ROIC) for low-cost sensors deposited directly and unpatterned onto this ROIC. TFTs have already been thoroughly optimized for power, weight, large-format, and cost by the flat-panel-display industry. We present experimental investigation of aqueous-spray-deposited, mid-wave-IR, metal-chalcogenide heterojunction CdS/PbS photodiodes for this application. Measured responsivity, detectivity D*, and photoresponse spectra are reported.

Bolometric arrays dominate in commercial terahertz and millimeter wave imagers. Bolometers tend to be slow and require an operating bias that increases the power budget. This paper presents first results on antenna-coupled thermo-electric junction detectors, a potentially attractive alternative to microbolometers. The nanoscale junctions have small thermal mass and can be much faster than bolometers. These junctions are heated by currents excited in spectrally-selective antennas and generate a voltage based on the Seebeck effect without any externally applied power. A pixel comprising a series array of antenna coupled junctions with peak response at 7.5 THz (40 µm wavelength) is designed and experimentally demonstrated. Responsivity of 5 MV/W, 500 Hz chopping frequency, and D* of 3.5 x 1010 Jones are demonstrated.

Thermoelectric (TE) thin films have promise for harvesting electrical energy from waste heat. We demonstrate TE materials and thermocouples deposited by aqueous spray deposition on glass. The n-type material was CdO doped with Mn and Sn. Two p-type materials were investigated, namely PbS with co-growth of CdS and doped with Na and Na2CoO4. Seebeck coefficients, resistivity, and power generation for thermocouples were characterized.

Adsorbates’ binding energy is often used as an indicator of the adsorbate-substrate bond strength. Although one can compute any binding energy, models to gauge bond-strength are developed to rationalize and anticipate it for the rational search for efficient catalysts. Unfortunately, bond-strength alone fails to predict trends in binding energy because, as hinted by models since the 1970s, the binding energy is the outcome of a complex response of the system to the created bond. Therefore further understanding the difference between binding energy and bond strength is essential to catalysts design. Indeed, the adsorbate-substrate bond formation perturbs, not only the geometry of the system, but also the substrate and adsorbate's electronic charge density. Both effects overall reduce the binding energy by an energy attached to such perturbations, the so-called perturbation energy. Here, with the example of carbon monoxide adsorption on metal-doped graphene, we show that such perturbation energy may exceed 1 eV and render an unusual situation: Namely, although the binding energy of CO to the Au-doped graphene indicates that binding does not happen, we find evidence of a strong bond between CO and such substrate. Thus, in this case, the large perturbation energy totally disrupts the equivalency between bond strength and binding energy. Here we propose a method to compute the perturbation energy that bypasses dealing with an excited electronic state of the system.

The discovery of a topological nodal-line (TNL) semimetal phase in ZrSiS has invigorated the study of other members of this family. Here, we present a comparative electronic structure study of $\mathrm{ZrSi}X$ (where $X=\text{S}$, Se, Te) using angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations. Our ARPES studies show that the overall electronic structure of $\mathrm{ZrSi}X$ materials comprises the diamond-shaped Fermi pocket, the nearly elliptical-shaped Fermi pocket, and a small electron pocket encircling the zone center ($\mathrm{\ensuremath{\Gamma}}$) point, the $M$ point, and the $X$ point of the Brillouin zone, respectively. We also observe a small Fermi surface pocket along the $M\ensuremath{-}\mathrm{\ensuremath{\Gamma}}\ensuremath{-}M$ direction in ZrSiTe, which is absent in both ZrSiS and ZrSiSe. Furthermore, our theoretical studies show a transition from nodal-line to nodeless gapped phase by tuning the chalcogenide from S to Te in these material systems. Our findings provide direct evidence for the tunability of the TNL phase in $\mathrm{ZrSi}X$ material systems by adjusting the spin-orbit coupling strength via the $X$ anion.

Unveiling new topological phases of matter is one of the current objectives in condensed matter physics. Recent experimental discoveries of Dirac and Weyl semimetals prompt to search for other exotic phases of matter. Here we present a systematic angle-resolved photoemission spectroscopy (ARPES) study of ZrSiS, a prime topological nodal semimetal candidate. Our wider Brillouin zone (BZ) mapping shows multiple Fermi surface pockets such as the diamond-shaped Fermi surface, ellipsoidal-shaped Fermi surface, and a small electron pocket encircling at the zone center (G) point, the M point and the X point of the BZ, respectively. We experimentally establish the spinless nodal fermion semimetal phase in ZrSiS, which is supported by our first-principles calculations. Our findings evidence that the ZrSiS-type of material family is a new platform to explore exotic states of quantum matter, while these materials are expected to provide an avenue for engineering two-dimensional topological insulator systems., 6 pages, 3 figures

Recently, noncentrosymmetric superconductor BiPd has attracted considerable research interest due to the possibility of hosting topological superconductivity. Here we report a systematic high-resolution angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES study of the normal state electronic and spin properties of BiPd. Our experimental results show the presence of a surface state at higher-binding energy with the location of Dirac point at around 700 meV below the Fermi level. The detailed photon energy, temperature-dependent and spin-resolved ARPES measurements complemented by our first-principles calculations demonstrate the existence of the spin-polarized surface states at high-binding energy. The absence of such spin-polarized surface states near the Fermi level negates the possibility of a topological superconducting behaviour on the surface. Our direct experimental observation of spin-polarized surface states in BiPd provides critical information that will guide the future search for topological superconductivity in noncentrosymmetric materials., A superconducting material containing a topologically non-trivial electronic band structure presents the possibility of realizing Majorana states as well as exotic excitations with potential in quantum computing. Here, the authors evidence the required ingredients in the noncentrosymmetric superconductor BiPd.