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The Kondo effect has been a topic of intense study because of its significant contribution to the development of theories and understanding of strongly correlated electron systems. In this work, we show that the Kondo effect is at work in La1−xPrxNiO3−δ (0 ≤ x ≤ 0.6) thin films. At low temperatures, the local magnetic moments of the 3d eg electrons in Ni2+, which form because of oxygen vacancies, interact strongly with itinerant electrons, giving rise to an upturn in resistivity with x ≥ 0.2. Observation of negative magnetoresistance, described by the Khosla and Fisher model, further supports the Kondo picture. This case represents a rare example of the Kondo effect, where Ni2+ acts as an impurity in the background of Ni3+. We suggest that when Ni2+ does not participate in the regular lattice, it provides the local magnetic moments needed to scatter the conduction electrons in the Kondo effect. These results offer insights into emergent transport behaviors in metallic nickelates with mixed Ni3+ and Ni2+ ions, as well as structural disorder.

We developed a method for characterizing permeation parameters in hydrogen sorption and desorption processes in polymers using the volumetric measurement technique. The technique was utilized for three polymers: nitrile butadiene rubber (NBR), ethylene propylene diene monomer (EPDM), and fluoroelastomer (FKM). The total uptake (C∞), total desorbed content (C0), diffusivity in sorption (Ds), and diffusivity in desorption (Dd) of hydrogen in the polymers were determined versus the sample diameter used in both processes. For all the polymers, the diameter dependence was not detected for C∞ and C0. The average C∞ and C0 at 5.75 MPa were 316 wt∙ppm and 291 wt∙ppm for NBR, 270 wt∙ppm and 279 wt∙ppm for EPDM, and 102 wt∙ppm and 93 wt∙ppm for FKM. The coincidence of C∞ and C0 in the sorption and desorption process indicated physisorption upon introducing hydrogen molecules into the polymers. The larger Dd in the desorption process than Ds could be attributed to an increased amorphous phase and volume swelling after decompression. The equilibrium time to reach the saturation of the hydrogen content in both processes was experimentally confirmed as proportional to the squared radius and consistent with the COMSOL simulation. This method could be used to predict the equilibrium time of the sorption time, depending on the radius of the polymers without any measurement.

With the increasing interest in hydrogen energy, the stability of hydrogen storage facilities and components is emphasized. In this study, we analyzed the effect of high-pressure hydrogen gas treatment in silica-filled EPDM composites with different silica contents. In detail, cure characteristics, crosslink density, mechanical properties, and hydrogen permeation properties were investigated. Results showed that material volume, remaining hydrogen content, and mechanical properties were changed after 96.3 MPa hydrogen gas exposure. With an increase in the silica content, the crosslink density and mechanical properties increased, but hydrogen permeability was decreased. After treatment, high-silica-content composites showed lower volume change than low-silica-content composites. The crack damage due to the decompression caused a decrease in mechanical properties, but high silica content can inhibit the reduction in mechanical properties. In particular, EPDM/silica composites with a silica content of above 60 phr exhibited excellent resistance to hydrogen gas, as no change in their physical and mechanical properties was observed.

Charge recombination at the photoelectrode/dye/electrolyte interface decreases the energy conversion efficiency of dye-sensitized solar cells (DSSCs). To suppress charge recombination at this interface in DSSCs, an aluminum oxide (Al₂O₃) film can be deposited as an insulating metal oxide layer on the photoelectrode to form an energy barrier. However, the Al₂O₃ energy barrier can also disturb the transport of injected electrons to the working electrode through the titanium dioxide (TiO₂) photoelectrode. In this study, Al₂O₃ was selectively deposited as an insulating metal oxide layer on the upper side of a TiO₂ photoelectrode, which has a high probability of charge recombination, using plasma-enhanced atomic layer deposition. Deposition of the Al₂O₃ layer by this method helped to minimize the transport rate deterioration of injected electrons. This resulted in an increase of the efficiency of DSSCs containing the Al₂O₃ layer by 42.3% compared with that of a reference DSSC without the insulating metal oxide layer.

A reliability assessment was performed to predict the lifetime of an anodic aluminum oxide film coated on equipment used in plasma etching processes. An anodic aluminum-oxide-coated part was exposed to an argon plasma, and its weight loss was monitored. This plasma test was conducted at four different pressure levels (125, 150, 200, and 250 mTorr). The failure distribution data obtained for each pressure level were found to indicate the same failure mechanism. Subsequently, an inverse power model was the best fit model for describing the relationship between the applied pressure and the lifetime of a part. The failure of the anodic aluminum oxide film caused by long-term exposure to plasma is, thus, shown to be closely linked to a decrease in the weight of the film.

Rubber materials play a key role in preventing hydrogen gas leakage in high-pressure hydrogen facilities. Therefore, it is necessary to investigate rubber materials exposed to high-pressure hydrogen to ensure operational safety. In this study, permeation, volume swelling, hydrogen content, and mechanical characteristics of acrylonitrile butadiene rubber (NBR), ethylene propylene diene monomer (EPDM), and fluorocarbon (FKM) samples exposed to pressures of 35 and 70 MPa were investigated. The results showed that the volume recovery and hydrogen desorption behavior of EPDM with the highest permeation were fast whereas those of FKM with the lowest permeation were slow. The volume of NBR with the highest hydrogen content expanded after decompression. In contrast, FKM swelled the most despite having the lowest hydrogen content. After exposure to high-pressure hydrogen, the compression set (CS) slightly increased due to internal cracks, but the tensile strength decreased significantly with increasing pressure despite the absence of cracks in the fracture area of all tensile specimens. It was concluded that the decrease in tensile strength is closely related to the volume increase because of the relationship between the relative true strength and the volume ratio.

We have been studied on the physical property evaluation in high-pressure hydrogen environment for components and materials used in hydrogen infrastructure such as hydrogen refueling station and hydrogen fuel cell vehicle for safe use and dissemination of hydrogen energy. Hydrogen is small and light and easily leaks out of storage containers or parts. For safety, it is important to measure the permeability of the material and parts for high pressure hydrogen vessel. We will present the measurement of hydrogen permeability of polymer materials used in hydrogen storage containers and O-rings. Hydrogen permeability was measured by differential pressure method, and the permeability of several polymers such as EPDM, NBR, FKM, and HDPE was measured. Their diffusivity could be calculated using the obtained permeability graph, and their solubility was also obtained. We will measure the permeability by changing the type and the amount of additives and fillers in polymers. We will also measure the change in permeability with various hydrogen pressure and temperature.

HfO2 was deposited at 80&ndash, 250 &deg, C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150&ndash, 200 &deg, C) to lower temperatures (80&ndash, 150 &deg, C) in PEALD. HfO2 deposited at 80 &deg, C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 &deg, C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 &deg, C by PEALD on polyethylene terephthalate (PET) was high (&gt, 84%). PET deposited above 80 &deg, C was unable to withstand heat and showed deformation. HfO2 deposited at 80 &deg, C by PEALD showed decreased leakage current from 1.4 &times, 10&minus, 2 to 2.5 &times, 5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.

HfO2 was deposited at 80–250 °C by plasma-enhanced atomic layer deposition (PEALD), and properties were compared with those obtained by using thermal atomic layer deposition (thermal ALD). The ALD window, i.e., the region where the growth per cycle (GPC) is constant, shifted from high temperatures (150–200 °C) to lower temperatures (80–150 °C) in PEALD. HfO2 deposited at 80 °C by PEALD showed higher density (8.1 g/cm3) than those deposited by thermal ALD (5.3 g/cm3) and a smooth surface (RMS Roughness: 0.2 nm). HfO2 deposited at a low temperature by PEALD showed decreased contaminants compared to thermal ALD deposited HfO2. Values of refractive indices and optical band gap of HfO2 deposited at 80 °C by PEALD (1.9, 5.6 eV) were higher than those obtained by using thermal ALD (1.7, 5.1 eV). Transparency of HfO2 deposited at 80 °C by PEALD on polyethylene terephthalate (PET) was high (> 84%). PET deposited above 80 °C was unable to withstand heat and showed deformation. HfO2 deposited at 80 °C by PEALD showed decreased leakage current from 1.4 × 10−2 to 2.5 × 10−5 A/cm2 and increased capacitance of approximately 21% compared to HfO2 using thermal ALD. Consequently, HfO2 deposited at a low temperature by PEALD showed improved properties compared to HfO2 deposited by thermal ALD.

Enhanced electroluminescence in blue organic light-emitting diodes (OLEDs) is obtained by incorporating Ag nanoparticles (NPs) into hole injection layer of poly(3,4- ethylenedioxythiophene):polystyrene sulfonic acid (PEDOT:PSS). The absorption peak of the localized surface plasmons (LSPs) introduced by the 60 nm Ag NPs matches the emission wavelength of the blue OLEDs were matched at wavelength of 442 nm. In addition, to maximize their coupling and to prevent the quenching of the emission, the distance between surface plasmons (SPs) around NPs and organic fluorophores is optimized. Finally, the emission intensity and the current efficiency of diode with Ag NPs were increased by 19% and 18%, respectively.

In this work, we modified the surfaces of BaTiO3 particles by using barium acetate and ammonium bicarbonate, and we studied the characteristics and sintering behaviors of the coated BaTiO3 particles. Transmission electron microscopy showed that the resultant coating layer was smooth and uniform without agglomerates. X-ray photoemission spectroscopy analysis also revealed that the surface coating layer was composed of BaCO3. After calcination at 950 °C for 5 hours, the c/a ratio of the coated particles was found to have increased without size growth while the uncoated particles showed size growth. We finally found that the BaCO3 layer acted as a barrier to inhibit particle growth during calcination.

Charge recombination at the photoelectrode/dye/electrolyte interface decreases the energy conversion efficiency of dye-sensitized solar cells (DSSCs). To suppress charge recombination at this interface in DSSCs, an aluminum oxide (Al₂O₃) film can be deposited as an insulating metal oxide layer on the photoelectrode to form an energy barrier. However, the Al₂O₃ energy barrier can also disturb the transport of injected electrons to the working electrode through the titanium dioxide (TiO₂) photoelectrode. In this study, Al₂O₃ was selectively deposited as an insulating metal oxide layer on the upper side of a TiO₂ photoelectrode, which has a high probability of charge recombination, using plasma-enhanced atomic layer deposition. Deposition of the Al₂O₃ layer by this method helped to minimize the transport rate deterioration of injected electrons. This resulted in an increase of the efficiency of DSSCs containing the Al₂O₃ layer by 42.3% compared with that of a reference DSSC without the insulating metal oxide layer.

The interface between graphene and a ferromagnetic substrate has attracted recent research interests due to its potential for spintronic applications. We report an angle-resolved photoemission spectroscopy study on the interface between graphene and cobalt epitaxially grown on a tungsten substrate. We find that the electron band structure of the interface exhibits clear discontinuities at the crossing points with cobalt 3d bands. These observations indicate strong hybridizations between the electronic states in the interface and provide an important clue to understand the intriguing electromagnetic properties of the graphene/ferromagnet interface.

During the deposition of organic light emitting diodes (OLEDs) using thermal evaporation, the purity of the deposition-source materials varies due to thermal stress, resulting in a reduced device stability. We developed an apparatus to evaluate the long-term thermal stability of deposition-source materials used in OLEDs, which is applicable even under high-vacuum conditions (below 10−4 Pa) where the materials under test run out very quickly when exposed to temperature greater than 300 °C, which is above their deposition temperature. The goal of this work is to understand how thermal stresses imposed on OLED materials for a certain duration affect the material purity and, ultimately, the device performance. We used this apparatus to expose N,N′-Di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB), a commonly used hole-transport material for OLEDs, to thermal stresses for various durations. After maintaining the samples at 330 °C (380 °C) for 25 h (50 h), we performed high-performance liquid chromatography to analyze the material purity. In addition, OLEDs with a simple bilayer structure (NPB/tris(8-hydroxyquinoline)aluminum, Alq3) were fabricated from the heated samples to investigate how material impurities that are induced by thermal stresses affect the device stability. The results show that slight changes in the NPB purity caused by prolonged exposure to high temperatures significantly influence the electrical and optical characteristics of OLEDs fabricated from the heated NPB.

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

The effect of growth temperature on the atomic layer deposition of zirconium oxide (ZrO2) dielectric thin films that were fabricated using a CpZr[N(CH3)2]3/C7H8 cocktail precursor with ozone was investigated. The chemical, structural, and electrical properties of ZrO2 films grown at temperatures from 250 to 350 °C were characterized. Stoichiometric ZrO2 films formed at 250–350 °C with an atomic ratio of O to Zr of 1.8–1.9 and a low content of carbon impurities. The film formed at 300 °C was predominantly the tetragonal crystalline phase, whereas that formed at 350 °C was a mixture of tetragonal and monoclinic phases. Electrical properties, such as capacitance, leakage current, and voltage linearity of TiN/ZrO2/TiN capacitors fabricated using the thin ZrO2 films grown at different temperatures were compared capacitor applications. The ZrO2 film grown at 300 °C exhibited low impurity content, predominantly tetragonal crystalline structure, a high dielectric permittivity of 38.3, a low leakage current of below 10−7 A/cm2 at 2 V, and low-voltage linearity.

Mastering non-evaporable getter (NEG) thin films by elucidating their activation mechanisms and predicting their sorption performances will contribute to facilitating their integration into micro-electro-mechanical systems (MEMS). For this aim, thin film based getters structured in single and multi-metallic layered configurations deposited on silicon substrates such as Ti/Si, Ti/Ru/Si, and Zr/Ti/Ru/Si were investigated. Multilayered NEGs with an inserted Ru seed sub-layer exhibited a lower temperature in priming the activation process and a higher sorption performance compared to the unseeded single Ti/Si NEG. To reveal the gettering processes and mechanisms in the investigated getter structures, thermal activation effect on the getter surface chemical state change was analyzed with in-situ temperature XPS measurements, getter sorption behavior was measured by static pressure method, and getter dynamic sorption performance characteristics was measured by standard conductance (ASTM F798&ndash, 97) method. The correlation between these measurements allowed elucidating residual gas trapping mechanism and prediction of sorption efficiency based on the getter surface poisoning. The gettering properties were found to be directly dependent on the different changes of the getter surface chemical state generated by the activation process. Thus, it was demonstrated that the improved sorption properties, obtained with Ru sub-layer based multi-layered NEGs, were related to a gettering process mechanism controlled simultaneously by gas adsorption and diffusion effects, contrarily to the single layer Ti/Si NEG structure in which the gettering behavior was controlled sequentially by surface gas adsorption until reaching saturation followed then by bulk diffusion controlled gas sorption process.

A single-molecule ferritin picking-up process was realized with the use of AFM, which was enhanced by employing controlled dendron surface chemistry. The approach enabled the placement of a single ferritin protein molecule at the very end of an AFM tip. When used for magnetic force microscopy (MFM) imaging, the tips were able to detect magnetic interactions of approximately 10 nm sized magnetic nanoparticles. The single ferritin tip also showed the characteristics of a "multifunctional" MFM probe that can sense the magnetic force from magnetic materials as well as detect the biomolecular interaction force with DNAs on the surface. The multifunctional tip enabled us not only to investigate the specific molecular interaction but also to image the magnetic interaction between the probe and the substrate, in addition to allowing the common capability of topographic imaging. Because the protein engineering of ferritin and the supporting coordination and conjugation chemistry are well-established, we envisage that it would be straightforward to extend this approach to the development of various single magnetic particle MFM probes of different compositions and sizes.

A proper surface treatment of the substrate and the AFM tip with a structured molecule provided a new approach to pick a single DNA molecule with reasonable success rate (75%) by AFM. Picking a single molecule by AFM tip and realizing the single interaction will likely be useful for single molecule dynamic force spectroscopy, because it avoids the formation of problematic multiple interactions. As an extension, a new single DNA was allowed to hybridize with the picked DNA, and conjugated with the picker DNA by use of a ligase. The attachment of a single DNA at the apex was confirmed by measuring the force between the new DNA and the complementary DNA on the generic surface. Various applications of the tip for manipulating single molecules and preparing new nanomaterials are envisaged.