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Suppression of 1/f noise in tunnel magnetoresistance (TMR) sensors is a central issue in the realization of magnetic field sensors with ultrafine magnetic field detectivity. Although AC modulation with an external magnetic field has been proposed as a method to shift the operating frequency of a sensor to a high frequency and substantially suppress 1/f noise, its effects on the two types of 1/f noise, that is, magnetic and electrical 1/f noise, are not well understood. In this study, we investigated the noise characteristics and signal detection performance of TMR sensors with an even-function resistance-magnetic field curve operated by the AC modulation method. For one TMR device in which the magnetic 1/f noise was dominant, AC modulation degraded the magnetic field detectivity owing to the additional noise induced by the AC modulation field. However, in another TMR device, in which the electrical 1/f noise was artificially enhanced by introducing lattice defects in the MgO tunnel barrier, AC modulation effectively suppressed the 1/f noise and improved the magnetic field detectivity by one order. This demonstrates that the AC modulation method using an external magnetic field is effective for magnetic field sensors in which electrical 1/f noise is dominant. [ABSTRACT FROM AUTHOR]

We report on tunnel magnetoresistance (TMR) sensors with two ferromagnetic free layers (FLs) on both sides of a MgO tunnel barrier. The magnetizations of these FLs are weakly (softly) pinned in an anti-parallel configuration by the exchange bias of IrMn antiferromagnetic layers through ferromagnetic and/or antiferromagnetic interlayer couplings of non-magnetic spacer layers. These dual soft-pinned FL (SPFL) sensors show a symmetric resistance (R) change with respect to the polarity of the external magnetic field (H) applied to the hard axis (HA) of the SPFLs and TMR ratios of over 200%, which is much higher than those of the single-SPFL sensors, where one side of the ferromagnetic layers is an SPFL and the other side is a strongly pinned reference layer. When the applied H exhibits an angular misalignment from the HA, dual-SPFL sensors show much-reduced asymmetry in the R–H curves than single-SPFL sensors. Macrospin simulations of the magnetization behavior and R–H curve for both dual- and single-SPFL sensors revealed that the small asymmetry in the R–H curves of dual-SPFL sensors was owing to their significantly smaller dependence of relative magnetization angle between the SPFLs on the magnetic field misalignment from the HA. These results suggest that dual-SPFL TMR sensors are promising for use in magnetic sensors such as encoder sensors for position and rotation detections. [ABSTRACT FROM AUTHOR]

We investigate the effects of off-stoichiometric compositional variations from the Co2Fe(Ga0.5Ge0.5) (CFGG) full-Heusler alloy on its half-metallic electronic structure. First-principles calculations predict that the Co antisite defects that occupy Fe-sites (CoFe) lead to a finite DOS in the half-metallic gap of CFGG. Fe antisites defects in Co-sites (FeCo) introduced by excessing Fe composition, which could suppress the formation of CoFe, preserves the half-metallic gap but reduces spin polarization because the Fermi level shifts to the lower energy. We found that, in Fe-excess CFGG, Ge-excess has an important role to enhance the spin polarization by lifting up the Fermi level position and suppressing the formation of CoFe. To confirm the effect of the Fe and Ge-excess off-stoichiometric composition on spin polarization and phase-purity experimentally, we fabricated CFGG epitaxial thin films with various composition ratios (Co2−αFe1+α) (Ga1−βGeβ)1+γ with small positive γ (=0.09–0.29). It turns out that Co1.75Ge or Fe1.7Ge secondary phase often forms in the films for β ≥ 0.69 in Fe-deficient (α ≤ 0.21) and excess (α ≥ 0.49) compositions. This secondary phase can be suppressed by tuning the Ge and Fe compositions, and the L21-phase pure film was found in Co39.4Fe29.3Ga13.4Ge17.9 (α = 0.28 , β = 0.57 , γ = 0.25). The measurements of conventional magnetoresistance effects qualitatively indicate higher spin polarization in the Co39.4Fe29.3Ga13.4Ge17.9 film compared to other Co-excess and Ge-deficient films, which evidences the benefit to make Fe- and Ge-excess off-stoichiometric CFGG for obtaining the half-metallic nature of CFGG. [ABSTRACT FROM AUTHOR]

Recent advances in the study of materials with topological electronic band structures have revealed magnetic materials exhibiting giant anomalous Hall effects (AHEs). The giant AHE has not only attracted the research interest in its mechanism but also opened up the possibility of practical application in magnetic sensors. In this article, we describe simulation-based investigations of AHE magnetic sensors for applications to read head sensors (readers) of hard disk drives. With the shrinking of magnetic recording patterns, the reader technology, which currently uses multilayer-based tunnel magnetoresistance (TMR) devices, is associated with fundamental challenges, such as insufficient spatial resolution and signal-to-noise ratio (SNR) in sensors with dimensions below 20 nm. The structure of an AHE-based device composed of a single ferromagnetic material is advantageous for magnetic sensors with nanoscale dimensions. We found that AHE readers using topological ferromagnets with giant AHE, such as Co2MnGa, can achieve a higher SNR than current TMR readers. The higher SNR originates from the large output signal of the giant AHE as well as from the reduced thermal magnetic noise, which is the dominant noise in TMR readers. We highlight a major challenge in the development of AHE readers: the reduction in the output signal due to the shunting of the bias current and the leakage of the Hall voltage through the soft magnetic shields surrounding the AHE reader. We propose reader structures that overcome this challenge. Finally, we discuss the scope for future research to realize AHE readers. [ABSTRACT FROM AUTHOR]

Half-metallic Heusler alloys are promising candidates for spintronic applications due to their high spin polarization. However, the spin polarization strongly depends on the atomic composition, which is time-consuming to optimize from various compositional combinations. Here, we demonstrate a high-throughput compositional optimization method for high spin polarization in Co2(Mn, Fe)Ge Heusler alloys by combining composition-spread films and anisotropic magnetoresistance (AMR) measurement. Two types of composition-spread films of polycrystalline Co2(Mn1−xFex)Ge and (Co2Mn0.5Fe0.5)1−yGey are fabricated on SiO2/Si substrates by combinatorial sputtering deposition, followed by post-annealing. The compositional dependence of AMR shows the largest negative AMR ratio of −0.13% and the smallest temperature dependence of the resistance change of AMR for y = 0.25 in the (Co2Mn0.5Fe0.5)1−yGey composition-spread film, suggesting the highest spin polarization and the closest nature to the ideal half-metal at this composition ratio. To verify this, we also develop a new technique to measure the compositional dependence of spin polarization by measuring the spin accumulation signals of nonlocal spin-valve devices fabricated on the composition-spread films and observe the highest spin polarization of 82% for y = 0.24. This confirms a clear qualitative correlation between the large negative AMR ratio and high spin polarization. Our combinatorial method using the composition-spread films and the AMR measurement proves to be a facile way for optimizing the fabrication conditions of half-metallic Heusler alloys with high spin polarization. [ABSTRACT FROM AUTHOR]

We studied the effect of the (Ni0.8Fe0.2)100−xCrx seed layer on the current-in-plane giant magnetoresistance (CIP-GMR) in Fe16Co66Ni18/Cu multilayer films. Both the GMR ratio (ΔR/R) and interlayer exchange coupling (IEC) between the FeCoNi layers showed strong dependences on the Cr concentration x in the seed layer. The highest ΔR/R of ∼30% was obtained for x = 38 (at. %) due to a comparatively strong antiparallel IEC resulting from a strong [111]-out-of-plane-texture of the [FeCoNi/Cu] multilayer. This confirms that a strong [111] texture is essential for the GMR in antiferromagnetically coupled multilayers as reported in previous works. However, we found that the strong [111] texture is not sufficient to obtain large ΔR/R. For x = 48, the [FeCoNi/Cu] multilayer showed a strong [111] texture as that for x = 38; however, the observed ΔR/R and antiparallel IEC for x = 48 were much smaller than those for x = 38. Detailed microstructural and chemical analyses by scanning transmission electron microscopy revealed that the fluctuation of the thickness of the Cu spacer layer can explain the reduction of antiparallel IEC that gave rise to the decrease in ΔR/R in the case of x = 48. We also discuss the effect of IEC energies on the sensitivity of GMR sensors. [ABSTRACT FROM AUTHOR]

Although an enhanced magnetoresistance (MR) has been observed in many Co2-based Heusler alloys by promoting their structural ordering from B2 to L21 by post-annealing at higher temperatures (Tann > 500 °C), it is desirable to search for other Heusler alloys that crystallize in L21-order below 300 °C, as the maximum Tann is restricted for processing devices. For Co2MnZ (Z = Ge, Sn) Heusler alloys, an L21-order is expected to appear even in the as-deposited state or by a low-temperature annealing process due to their very high L21 to B2-order transition temperature (>1500 K). Here, epitaxial Co2MnZ films were grown on MgO (001) substrate at room temperature (RT) and post-annealed at Tann = 200–500 °C. Interestingly, as-sputtered films exhibit L21-ordering, which improves systematically upon increasing Tann. The spin-polarization of electric current (β) was estimated at RT using nonlocal spin-valve (NLSV) devices by measuring the spin-accumulation signal in a copper (Cu) channel. It was found that at Tann = 300 °C, the β value of Co2MnGe films is higher (∼0.65) than that of Co2FeGe0.5Ga0.5 films due to a higher degree of L21-order, which makes the Co2MnGe alloy a promising ferromagnetic electrode for spintronic device applications. [ABSTRACT FROM AUTHOR]

Current-perpendicular-to-plane magnetoresistance (CPP-MR) devices using a Co2Fe(Ga0.5Ge0.5) Heusler alloy as ferromagnetic electrodes and a Ag/Mg-Ti-O (MTO)/Ag tri-layer as a spacer are studied. A large voltage output of 16 mV with a magnetoresistance ratio of 46% and resistance-area product RpA in the parallel magnetization state of approximately 200 mΩ μm2 are obtained. The microstructure characterization reveals that upon annealing at 550 °C, nanoscale Ag channels are formed penetrating the MTO layer, which are responsible for the large MR output. At room temperature, for all the devices, RpA decreases with increasing the bias voltage Vb, which is contradictory to the conventional CPP-giant magnetoresistance devices with a current-confined-path structure, in which the RpA increases with increasing Vb. Such a Vb dependence of RpA is in accordance with the temperature dependence of RpA. These results suggest that the magneto-transport channels comprise semiconducting current confined paths, bringing new perspectives for the design and engineering of CPP-MR devices with conductive oxides-based multilayer spacers. [ABSTRACT FROM AUTHOR]

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.ydbio.2009.12.017 Byline: Tomoya Nakatani, Minoru Kumai, Eri Mizuhara, Yasuko Minaki, Yuichi Ono Keywords: Lmx1a; Foxa2; Dopaminergic neuron; Floor plate cell; Red nucleus; Mesencephalon; Neuronal identity; Cell fate; Mouse Abstract: Mesencephalic dopaminergic (mesDA) neurons control movement and behavior, and their loss causes severe neurological disorders, such as Parkinson's disease. Recent studies have revealed that mesDA neurons originate from mesencephalic floor plate (FP) cells, which had been thought of as non-neurogenic organizer cells regulating regional patterning and axonal projections. Otx2 and its FP-specific downstream factor Lmx1a have been shown to be sufficient to confer neurogenic activity on FP cells and determine a mesDA fate. However, the mechanism underlying how these factors control mesDA development and how FP cells and mesDA neurons are coordinately specified are still largely unknown. In the present study, we obtained evidence that Lmx1a and Lmx1b cooperate with Foxa2 to specify mesDA neuron identity by gain-of-function approaches using transgenic mice. Lmx1a/b appeared to select a mesDA fate by suppressing red nucleus fate in the context of Foxa2-positive progenitors, at least in part, through repressing the Sim1-Lhx1 and Ngn1 pathways that inhibit proper mesDA differentiation. We also found that, in the mesencephalon, FP cell fate is primarily determined by Foxa2 with a supportive action of Lmx1a/b through repressing Nkx6.1, which inhibits FP cell differentiation. Thus, FP and mesDA identities are determined by distinct specification pathways, both of which are controlled by the same combination of transcription factors, Lmx1a/b and Foxa2, and, as a consequence, mesDA neurons are generated from mesencephalic FP cells. Author Affiliation: KAN Research Institute Inc., Kobe MI R&D Center, 6-7-3 Minatojima-minamimachi, Chuo-ku, Kobe, Hyogo 650-0047, Japan Article History: Received 1 July 2009; Revised 7 December 2009; Accepted 15 December 2009

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.ydbio.2009.11.032 Byline: Eri Mizuhara (a), Yasuko Minaki (a), Tomoya Nakatani (a), Minoru Kumai (b), Takeshi Inoue (a), Keiko Muguruma (c), Yoshiki Sasai (c), Yuichi Ono (a)(b) Keywords: Neph3; E-cadherin; Ptf1a; Purkinje cell; Origin; Neuronal subtype; Cell sorting; Cell surface marker; Fate mapping Abstract: GABAergic Purkinje cells (PCs) provide the primary output from the cerebellar cortex, which controls movement and posture. Although the mechanisms of PC differentiation have been well studied, the precise origin and initial specification mechanism of PCs remain to be clarified. Here, we identified a cerebellar and spinal cord GABAergic progenitor-selective cell surface marker, Neph3, which is a direct downstream target gene of Ptf1a, an essential regulator of GABAergic neuron development. Using FACS, Neph3.sup.+ GABAergic progenitors were sorted from the embryonic cerebellum, and the cell fate of this population was mapped by culturing in vitro. We found that most of the Neph3.sup.+ populations sorted from the mouse E12.5 cerebellum were fated to differentiate into PCs while the remaining small fraction of Neph3.sup.+ cells were progenitors for Pax2.sup.+ interneurons, which are likely to be deep cerebellar nuclei GABAergic neurons. These results were confirmed by short-term in vivo lineage-tracing experiments using transgenic mice expressing Neph3 promoter-driven GFP. In addition, we identified E-cadherin as a marker selectively expressed by a dorsally localized subset of cerebellar Neph3.sup.+ cells. Sorting experiments revealed that the Neph3.sup.+ E-cadherin.sup.high population in the embryonic cerebellum defined PC progenitors while progenitors for Pax2.sup.+ interneurons were enriched in the Neph3.sup.+ E-cadherin.sup.low population. Taken together, our results identify two spatially demarcated subregions that generate distinct cerebellar GABAergic subtypes and reveal the origin of PCs in the ventricular zone of the cerebellar primordium. Author Affiliation: (a) Group for Neuronal Differentiation, KAN Research Institute Inc., Kobe, Hyogo 650-0047, Japan (b) Group for Transgenic Technology, KAN Research Institute Inc., Kobe, Hyogo 650-0047, Japan (c) Organogenesis and Neurogenesis Group, Center for Developmental Biology, RIKEN, Kobe, Hyogo 650-0047, Japan Article History: Received 30 July 2009; Revised 12 November 2009; Accepted 30 November 2009

Magnetic field sensors using the tunnel magnetoresistance (TMR) effect require linear resistance–magnetic field (R–H) response curves with small hysteresis, for which the soft magnetic property of the free layer (FL) is critical. In this work, we investigated amorphous CoFeBTa (CFBT) as a soft magnetic layer of the FL of CoFeB/MgO/CoFeB-based magnetic tunnel junctions in view of magnetic, TMR, and low-frequency noise properties. A two-step annealing process enabled an orthogonal magnetization configuration between the FL and the reference layer, by which linear R–H curves with small hysteresis were realized. The change in the shape of the R–H curve depending on annealing temperature is explained by the Stoner–Wohlfarth model. The highest TMR ratio of ∼160% and sensitivity of ∼70%/mT were obtained with a CFBT (20 nm)/Ta (0.3 nm)/CoFeB (3 nm) FL. The noise of the TMR devices are dominated by 1/f noise below ∼10 kHz in frequency, which limits the detectivity (D) of the magnetic field of the sensor. The sensor devices patterned to 50 µm diameter circular shapes showed a minimum D of ∼2 nT/ at 10 Hz, which is superior to the previously reported values for the TMR sensors with NiFe soft magnetic layers. [ABSTRACT FROM AUTHOR]