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One-dimensional Schrodinger-Poissen self-consistent solver is applied to calculate the leakage current through the oxide of an n-channel metal-oxide-semiconductor (MOS) structure with an open boundary on one side. The tunneling current is computed for a MOS structure with Si[O.sub.2] and [Si.sub.3][N.sub.4] gate dielectrics and the computational results are compared with those obtained experimentally for similar structures.

A quantum-mechanical transmission problem for the metal-oxide-semiconductor (MOS) capacitor with open boundaries is formulated by considering a MOS capacitor and a metallic lead attached to them as a closed system. The computation of the leakage current though an ultrathin gate oxide according to the obtained analytical expressions agrees well with the experimental data without the use of fitting parameters.

A study is carried out on the oscillation of the direct tunneling current through the oxide of a metal-oxide-semiconductor (MOS) capacitor at high-applied gate voltages. The tunneling current based on pure quantum-mechanical assumptions is calculated, resulting in oscillations at high electric fields imposed on the monotonically increasing current.