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Symmetry engineering is explicitly effective to manipulate and even create phases and orderings in strongly correlated materials. Flexural stress is universally practical to break the space-inversion or time-reversal symmetry. Here, by introducing strain gradient in a centrosymmetric antiferromagnet Sr2IrO4, the space-inversion symmetry is broken accompanying a non-equivalent O p-Ir d orbital hybridization along z axis. Thus, emergent polar phase and out-of-plane magnetic moment have been simultaneously observed in these asymmetric Sr2IrO4 thin films, which both are absent in its ground state. Furthermore, upon the application of magnetic field, such polarization can be controlled by modifying the occupied d orbitals through spin-orbit interaction, giving rise to a flexomagnetoelectric effect. This work provides a general strategy to artificially design multiple symmetries and ferroic orderings in strongly correlated systems.

Correlated oxides and related heterostructures are intriguing for developing future multifunctional devices by exploiting their exotic properties, but their integration with other materials, especially on Si-based platforms, is challenging. Here, van der Waals heterostructures of La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO), a correlated manganite perovskite, and MoS$_2$ are demonstrated on Si substrates with multiple functions. To overcome the problems due to the incompatible growth process, technologies involving freestanding LSMO membranes and van der Waals force-mediated transfer are used to fabricate the LSMO-MoS$_2$ heterostructures. The LSMO-MoS$_2$ heterostructures exhibit a gate-tunable rectifying behavior, based on which metal-semiconductor field-effect transistors (MESFETs) with on-off ratios of over 104 can be achieved. The LSMO-MoS$_2$ heterostructures can function as photodiodes displaying considerable open-circuit voltages and photocurrents. In addition, the colossal magnetoresistance of LSMO endows the LSMO-MoS$_2$ heterostructures with an electrically tunable magnetoresponse at room temperature. This work not only proves the applicability of the LSMO-MoS$_2$ heterostructure devices on Si-based platform but also demonstrates a paradigm to create multifunctional heterostructures from materials with disparate properties.

Atomistic simulations hold significant value in clarifying crucial phenomena such as phase transitions and energy transport in materials science. Their success stems from the presence of potential energy functions capable of accurately depicting the relationship between system energy and lattice changes. In magnetic materials, two atomic scale degrees of freedom come into play: the lattice and the spin. However, accurately tracing the simultaneous evolution of both lattice and spin in magnetic materials at an atomic scale is a substantial challenge. This is largely due to the complexity involved in depicting the interaction energy precisely, and its influence on lattice and spin-driving forces, such as atomic force and magnetic torque, which continues to be a daunting task in computational science. Addressing this deficit, we present DeepSPIN, a versatile approach that generates high-precision predictive models of energy, atomic forces, and magnetic torque in magnetic systems. This is achieved by integrating first-principles calculations of magnetic excited states with deep learning techniques via active learning. We thoroughly explore the methodology, accuracy, and scalability of our proposed model in this paper. Our technique adeptly connects first-principles computations and atomic-scale simulations of magnetic materials. This synergy presents opportunities to utilize these calculations in devising and tackling theoretical and practical obstacles concerning magnetic materials.

SrTiO$_3$ has been extensively investigated owing to its abundant degrees of freedom for modulation. However, the microscopic mechanism of thermal transport especially the relationship between phonon scattering and lattice distortion during the phase transition are missing and unclear. Based on deep-potential molecular dynamics and self-consistent \textit{ab initio} lattice dynamics, we explore the lattice anharmonicity-induced tetragonal-to-cubic phase transition and explain this anomalous behavior during the phase transition. Our results indicate the significant role of the renormalization of third-order interatomic force constants to second-order terms. Our work provides a robust framework for evaluating the thermal transport properties during structural transformation, benefitting the future design of promising thermal and phononic materials and devices.

The anomalous Hall effect (AHE) is a quantum coherent transport phenomenon that conventionally vanishes at elevated temperatures because of thermal dephasing. Therefore, it is puzzling that the AHE can survive in heavy metal (HM)/antiferromagnetic (AFM) insulator (AFMI) heterostructures at high temperatures yet disappears at low temperatures. In this paper, we report that an unconventional high-temperature AHE in HM/AFMI is observed only around the N\'eel temperature of AFM, with large anomalous Hall resistivity up to 40 n$\Omega$ cm. This mechanism is attributed to the emergence of a noncollinear AFM spin texture with a non-zero net topological charge. Atomistic spin dynamics simulation shows that such a unique spin texture can be stabilized by the subtle interplay among the collinear AFM exchange coupling, interfacial Dyzaloshinski-Moriya interaction, thermal fluctuation, and bias magnetic field.

Controlling magnetism and spin structures in strongly correlated systems by using electric field is of fundamental importance but challenging. Here, a high-spin ruthenate phase is achieved via a solid ionic chemical junction at SrRuO3/SrTiO3 interface with distinct formation energies and diffusion barriers of oxygen vacancies, analogue to electronic band alignment in semiconductor heterojunction. Oxygen vacancies trapped within this interfacial SrRuO3 reconstruct Ru-4d electronic structure and orbital occupancy, leading to an enhanced magnetic moment. Furthermore, an interfacial magnetic phase can be switched reversibly by electric-field-rectifying oxygen migration in a solid-state ionic gating device, providing a framework for atomic design of functionalities in strongly correlated oxides using a way of solid chemistry.

The ability to tune magnetic orders, such as magnetic anisotropy and topological spin texture, is desired in order to achieve high-performance spintronic devices. A recent strategy has been to employ interfacial engineering techniques, such as the introduction of spin-correlated interfacial coupling, to tailor magnetic orders and achieve novel magnetic properties. We chose a unique polar-nonpolar LaMnO3/SrIrO3 superlattice because Mn (3d)/Ir (5d) oxides exhibit rich magnetic behaviors and strong spin-orbit coupling through the entanglement of their 3d and 5d electrons. Through magnetization and magnetotransport measurements, we found that the magnetic order is interface-dominated as the superlattice period is decreased. We were able to then effectively modify the magnetization, tilt of the ferromagnetic easy axis, and symmetry transition of the anisotropic magnetoresistance of the LaMnO3/SrIrO3 superlattice by introducing additional Mn (3d) and Ir (5d) interfaces. Further investigations using in-depth first-principles calculations and numerical simulations revealed that these magnetic behaviors could be understood by the 3d/5d electron correlation and Rashba spin-orbit coupling. The results reported here demonstrate a new route to synchronously engineer magnetic properties through the atomic stacking of different electrons, contributing to future applications.

Large magnetoelectric response in thin films is highly desired for high-throughput and high-density microelectronic applications. However, the d0 rule in single-phase compounds usually results in a weak interaction between ferroelectric and magnetic orders; the magnetoelectric coupling via elastic resonance in composites restricts their thin-film integration in broadband. Here, we effectuate a concurrence of ferroelectric-like and antiferromagnetic phase transitions in Sr2IrO4/SrTiO3 superlattices by artificial design periodically non-equivalent interfaces, where a maximum magnetoelectric coefficient of ~980 mV cm-1 Oe-1 can be measured. Evidenced by synchrotron X-ray absorption and electron energy loss spectroscopies, a lopsided electron occupation occurs at the interfacial Ti ions. From perturbative calculations and numerical results, a strong coupling of antiferromagnetism and asymmetric electron occupation mediated by spin-orbit interaction leads to a large bulk magnetoelectric response. This atomic tailoring of the quantum order parameters in 3d and 5d oxides provides an alternative pathway towards strong magnetoelectric effects with thin-film integrations.

Large Rashba effect efficiently tuned by an external electric field is highly desired for spintronic devices. Using first-principles calculations, we demonstrate that large Rashba splitting is locked at conduction band minimum in ferroelectric Bi(Sc/Y/La/Al/Ga/In)O3/PbTiO3 heterostructures where the position of Fermi level is precisely controlled via its stoichiometry. Fully reversible Rashba spin texture and drastic change of Rashba splitting strength with ferroelectric polarization switching are realized in the symmetric and asymmetric heterostructures, respectively. By artificially tuning the local ferroelectric displacement and the orbital hybridization, the synergetic effect of local potential gradient and orbital overlap on the dramatic change of splitting strength is confirmed. These results improve the feasibility of utilizing Rashba spin-orbit coupling in spintronic devices.